Measurement of Grain Boundary Parameters by Laser-Spot Photoconductivity

1982 ◽  
Vol 17 ◽  
Author(s):  
E. Poon ◽  
H.L. Evans ◽  
W. Hwang ◽  
R.M. Osgood ◽  
E.S. Yang
Keyword(s):  
Steady State ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Laser Beam ◽  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Transient Signals ◽  
Trap Energy ◽  
Interface Charge

ABSTRACTAn experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GBs) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. Both the steady-state and transient signals are recorded as functions of temperature. From these data, we obtain well-defined GB parameters, including the barrier height, interface charge density, trap energy and thermal capture cross-section. This technique allows us to examine localized regions of individual GBs in a semiconductor with multiple grains.

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC

2021 ◽  
Vol 21 (3) ◽  
pp. 1904-1908
Author(s):  
Woo-Young Son ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
Sang-Mo Koo
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Surface States ◽  
Nitride Layer ◽  
Double Negative ◽  
Capture Cross ◽  
Trap Energy ◽  
Transient Spectroscopy

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10−16 cm−2 and the trap concentration was reduced by approximately 40 times.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Grain Boundary Passivation in Polycrystalline Silicon : A D.L.T.S. Study

1981 ◽  
Vol 5 ◽  
Author(s):  
Prakash C. Srivastava ◽  
Jacques C. Bourgoin
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Cross Section ◽  
Polycrystalline Silicon ◽  
Capture Cross Section ◽  
Narrow Band ◽  
Total Density ◽  
Capture Cross ◽  
Deuterium Plasma ◽  
P Type

ABSTRACTAfter treatment in a deuterium plasma, the D.L.T.S. spectrum associated with grain boundaries in p–type Si is found to reduce to a narrow band centered at 0.32 ± 0.02 eV with a total density of 5 ⨉ 1015 cm−2 . However, the capture cross-section, measured to be ∼ 2 × 10−20 cm2 , is 10 times larger than the apparent cross-section associated with the states present in unpassivated material.

Steady State and Transient Capacitance Measurements of the Energy Levels of a Low Angle Tilt Boundary in a Germanium Bicrystal

1981 ◽  
Vol 5 ◽  
Author(s):  
A. Broniatowski ◽  
J.C. Bourgoin
Keyword(s):  
Steady State ◽  
Cross Section ◽  
Electron Microscope Study ◽  
Capture Cross Section ◽  
Energy Levels ◽  
Tilt Boundary ◽  
Capture Cross ◽  
Boundary Dislocation ◽  
Capacitance Measurements ◽  
Transient Capacitance

ABSTRACTSteady state and transient capacitance (DLTS) measurements have been performed on a low angle tilt boundary in a germanium bicrystal, in combination with an electron microscope study of the boundary dislocation structure. A characteristic level has been found at 0.42 eV below the bottom of the conduction band, with a density about 109 cm-2 and an electronic capture cross-section about 5 × 10-12 cm2.

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section

THERMAL NEUTRON CAPTURE CROSS-SECTION OF Na23 AND Mn55

1953 ◽  
Vol 31 (3) ◽  
pp. 204-206 ◽  
Author(s):  
Rosalie M. Bartholomew ◽  
R. C. Hawkings ◽  
W. F. Merritt ◽  
L. Yaffe
Keyword(s):  
Thermal Neutron ◽  
Cross Section ◽  
Cross Sections ◽  
Neutron Capture ◽  
Half Life ◽  
Capture Cross Section ◽  
Thermal Neutron Capture ◽  
Capture Cross ◽  
Neutron Capture Cross Section ◽  
Capture Cross Sections

The thermal neutron capture cross sections of Na23 and Mn55 have been determined using the activation method. The values are 0.53 ± 0.03 and 12.7 ± 0.3 barns respectively with respect to σAul97 = 93 barns. These agree well with recent pile oscillator results. The half-life for Mn56 is found to be 2.576 ± 0.002 hr.

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