Grain Boundary Passivation in Polycrystalline Silicon : A D.L.T.S. Study

1981 ◽  
Vol 5 ◽  
Author(s):  
Prakash C. Srivastava ◽  
Jacques C. Bourgoin
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Cross Section ◽  
Polycrystalline Silicon ◽  
Capture Cross Section ◽  
Narrow Band ◽  
Total Density ◽  
Capture Cross ◽  
Deuterium Plasma ◽  
P Type

ABSTRACTAfter treatment in a deuterium plasma, the D.L.T.S. spectrum associated with grain boundaries in p–type Si is found to reduce to a narrow band centered at 0.32 ± 0.02 eV with a total density of 5 ⨉ 1015 cm−2 . However, the capture cross-section, measured to be ∼ 2 × 10−20 cm2 , is 10 times larger than the apparent cross-section associated with the states present in unpassivated material.

Measurement of Grain Boundary Parameters by Laser-Spot Photoconductivity

1982 ◽  
Vol 17 ◽  
Author(s):  
E. Poon ◽  
H.L. Evans ◽  
W. Hwang ◽  
R.M. Osgood ◽  
E.S. Yang
Keyword(s):  
Steady State ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Laser Beam ◽  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Transient Signals ◽  
Trap Energy ◽  
Interface Charge

ABSTRACTAn experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GBs) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. Both the steady-state and transient signals are recorded as functions of temperature. From these data, we obtain well-defined GB parameters, including the barrier height, interface charge density, trap energy and thermal capture cross-section. This technique allows us to examine localized regions of individual GBs in a semiconductor with multiple grains.

Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon

2006 ◽  
Vol 89 (23) ◽  
pp. 232112 ◽  
Author(s):  
S. Dubois ◽  
O. Palais ◽  
P. J. Ribeyron
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Hole Capture ◽  
Type Silicon ◽  
P Type

Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy

2015 ◽  
Vol 821-823 ◽  
pp. 403-406 ◽  
Author(s):  
Koutarou Kawahara ◽  
Hiroshi Watanabe ◽  
Naruhisa Miura ◽  
Shuhei Nakata ◽  
Satoshi Yamakawa
Keyword(s):  
Cross Section ◽  
Ionization Energy ◽  
Capture Cross Section ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Capture Cross ◽  
Shallow Acceptor ◽  
Wide Range ◽  
Emission Time ◽  
P Type

Shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices; larger ionization energy and/or a smaller capture cross-section of levels in the SiC bandgap lead to a larger emission time constant and slower response of carriers. Nevertheless, knowledge about those levels is very limited. In this study, we clarified the ionization energy and the capture cross section of the Al shallow acceptor in 4H-SiC in a wide range of doping concentration by preparing appropriate samples and measuring them by thermal admittance spectroscopy. Furthermore, high densities of deep levels were discovered in Al+-implanted samples, which can degrade 4H-SiC device performance without any care.

Dislocation States and Deformation-Induced Point Defects in Plastically Deformed Germanium

2009 ◽  
Vol 156-158 ◽  
pp. 289-294 ◽  
Author(s):  
S. Shevchenko ◽  
A.N. Tereshchenko
Keyword(s):  
Heat Treatment ◽  
Cross Section ◽  
Point Defects ◽  
Capture Cross Section ◽  
Main Type ◽  
Narrow Line ◽  
Capture Cross ◽  
P Type ◽  
Ionization Enthalpy ◽  
Dlts Spectra

We used the DLTS and photoluminescence (PL) techniques to study the deep states due to dislocations and deformation-induced point defects (PDs) in plastically deformed p-type germanium single crystals containing predominantly 60 dislocations with density ND, ranging from 105 to 106 cm-2. The narrow line near the temperature 140K dominates in the DLTS spectra. The ionization enthalpy and the capture cross section for holes traps indicate that the substitution copper atoms Cus are the main type of PDs. A decrease of the Cus atoms concentration and redistribution of the intensity in the PL spectra after the heat treatment of deformed samples at a temperature 500 °C are attributed to the diffusion of copper atoms to dislocations resulting in the appearance of “dirty” regular segments of 60 dislocations.

Thermal Quenching of Photoconductivity and the Sign of Photocarriers in Doped a-Si:H

1991 ◽  
Vol 219 ◽  
Author(s):  
B.-G. Yoon ◽  
H. Fritzsche ◽  
M. Q. Tran ◽  
D.-Z. Chi
Keyword(s):  
Light Intensity ◽  
Cross Section ◽  
Capture Cross Section ◽  
Thermal Quenching ◽  
Capture Cross ◽  
Present Evidence ◽  
Normal Cross Section ◽  
Recombination Centers ◽  
P Type ◽  
Minority Carriers

ABSTRACTThermal quenching (TQ) of photoconductivity σp occurs when the demarkation level of minority carriers passes through recombination centers having small capture cross section for majority carriers compared to other centers present but normal cross section for minority carriers. The photoconductivity becomes superlinear with light intensity at the temperature of maximum TQ. We discovered TQ not only in n-type but also p-type a-Si:H. This cannot happen with the same centers unless the sign of the majority carriers changes. We present evidence that in p-type and undoped films majority carriers are electrons at T below TQ and holes above TQ. The nature of these special centers will be discussed.

Photoconductivity Analysis in High Resistivity p Type Zinc Compensated Silicon

1975 ◽  
Vol 53 (10) ◽  
pp. 1003-1011 ◽  
Author(s):  
S. Rabie ◽  
N. Rumin
Keyword(s):  
Band Gap ◽  
Cross Section ◽  
Room Temperature ◽  
Capture Cross Section ◽  
Zinc Level ◽  
High Resistivity ◽  
Published Data ◽  
Capture Cross ◽  
Acceptor Center ◽  
P Type

The decay of photoconductivity following band gap radiation has been measured in the temperature range 180–300 K on p type zinc compensated silicon samples containing approximately 1016 cm−3 of As and having room temperature resistivities between 0.7 and 50 K Ω cm. A strong correlation was found between the concentration of the neutral zinc atoms Nz0, deduced from resistivity vs. temperature measurements, and the measured decay time, suggesting that the recombination traffic was predominantly via the lower zinc level E1 and without the interference of any other traps. This enabled us to estimate the capture cross section for electrons on neutral zinc atoms, Szn0, to be approximately 1.2 × 10−16 cm2 and to be temperature independent in the measurement range. The resistivity measurements confirmed that E1 is located 0.31 eV above the top of the valence band and indicated that the concentration of any 'unwanted' traps that may be present in our samples was appreciably less than 2 × 1013 cm−3 in the range 0.07–0.15 eV below the center of the band gap. Correlation of the above results with our previously published data on n type zinc doped samples indicates that the electron trap influencing the photodecay times in n samples is a single acceptor center having a capture cross section of approximately 10−16 cm2. The results of measurements on more than seven zinc compensated samples with room temperature resistivities covering the range of 70 Ω cm n type, through near intrinsic, to 500 Ω cm p type results in a unified model capable of consistently explaining all our observations.

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section
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