Laser Photochemical Vapor Deposition of Ge Films (300 ≤ T ≤ 873 K) from GeH4: Roles of Ge2H6 and Ge

1986 ◽  
Vol 75 ◽  
Author(s):  
K. K. King ◽  
V. Tavitian ◽  
D. B. Geohegan ◽  
E. A. P. Cheng ◽  
S. A. Piette ◽  
...  
Keyword(s):  
Activation Energy ◽  
Laser Radiation ◽  
Vapor Deposition ◽  
Film Growth ◽  
Uv Laser ◽  
Cvd Growth ◽  
Excimer Laser Radiation ◽  
Parallel Geometry ◽  
Photochemical Vapor Deposition ◽  
Substrate Temperatures

AbstractThe photochemical growth of polycrystalline and amorphous Ge films on SiO2, GaAs and NaCl by photodissociating GeH4 with excimer laser radiation in parallel geometry is reported. For substrate temperatures (TS) below the pyrolytic threshold for GeH4 (553 K), two distinct regions of film growth are observed. In the 425< TS < 553 K range, the ultraviolet (UV) laser “seeds” the reactor with Ge2H6 which readily pyrolyzes at the surface, forming several monolayers of Ge which subsequently catalyze the pyrolysis of GeH4. The activation energy (Ea) in this region is the same as that for the normal CVD growth of Ge from GeH4 (Ea = 0.9 eV). If, however, the laser is pulsed throughout the film growth run, Ea falls by a factor of at least 2 and growth is observed for TS as low as 300 K. In this laser sustained region, film growth ceases in the absence of UV laser radiation. These results clearly demonstrate the ability of a UV laser to alter the reactor chemistry and dictate the species responsible for film growth.

UV Laser-Initiated Formation of Si3N4

1982 ◽  
Vol 17 ◽  
Author(s):  
T. F. Deutsch ◽  
D. J. Silversmith ◽  
R. W. Mountain
Keyword(s):  
Optical Properties ◽  
Laser Radiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Uv Laser ◽  
Pressure Chemical ◽  
Excimer Laser Radiation ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Substrate Temperatures

ABSTRACTSi3N4 films have been deposited on Si by using 193 nm ArF excimer laser radiation to initiate the reaction of SiH4 and NH3 at substrate temperatures between 200–600°C. Stoichiometric films having physical and optical properties comparable to those produced using low-pressure chemical vapor deposition (LPCVD) have been produced. The dielectric properties of the films are at present inferior to those of LPCVD material.

Epitaxial Growth of Thin Ge Films on [001] Gaas by Laser Photochemical Vapor Deposition from GeH4

1987 ◽  
Vol 101 ◽  
Author(s):  
V. Tavitian ◽  
C. J. Kiely ◽  
J. G. Eden
Keyword(s):  
Growth Rate ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Epitaxial Film ◽  
Film Growth ◽  
Cross Sectional ◽  
Parallel Geometry ◽  
193 Nm ◽  
Photochemical Vapor Deposition ◽  
Substrate Temperatures

ABSTRACTEpitaxial Ge films have been grown on [001] GaAs for substrate temperatures (Ts) as low as 285°C by photodissociating GeH4 at 193 nm in parallel geometry. For a laser fluence of ~15 mJ - cm-2, the film growth rate varies from 0.6 to ~5 nm - min-1, depending upon Ts and gas pressure. Plan and cross-sectional TEM studies of the Ge/GaAs bicrystal demonstrate that the 400–700 A thick Ge films are single crystal and epitaxial with the substrate. The present limitation on epitaxial film thickness appears to be imposed by reduced adatom mobility at the temperatures investigated.

Excimer Laser Interaction with Metals

1992 ◽  
Vol 285 ◽  
Author(s):  
W.W. Duley ◽  
G. Kinsman
Keyword(s):  
Experimental Data ◽  
Laser Radiation ◽  
Excimer Laser ◽  
Metal Surfaces ◽  
Laser Pulses ◽  
Radiative Properties ◽  
Uv Laser ◽  
Laser Interaction ◽  
Excimer Laser Radiation

ABSTRACTExcimer laser radiation may be used to process metal surfaces in a variety of novel ways. The simplest of these involves the use of UV laser pulses for ablation. Ablation occurs as the result of both vaporization and hydrodynamical effects. Experimental data related to these processes will be discussed. In addition, it will be shown how specific irradiation regimes can yield metal surfaces with unique radiative properties.

Defects and Their Control in SiO2 Films Prepared by D2 –Lamp Photochemical Vapor Deposition

1988 ◽  
Vol 131 ◽  
Author(s):  
Hidehiko Nonaka ◽  
Kazuo Arai ◽  
Shingo Ichimura
Keyword(s):  
Vapor Deposition ◽  
Defect Formation ◽  
Film Growth ◽  
Film Surface ◽  
Formation Mechanisms ◽  
Silica Films ◽  
Activated Oxygen ◽  
Surface Modified ◽  
Photochemical Vapor Deposition ◽  
Vacuum Uv

ABSTRACTAmorphous silica films deposited from the mixture of gases (Si2 H6 and Si2F6) by deutrium-lamp CVD were studied by IR, vacuum UV, EPR and Auger electron (AE) spectrometries. The F-doping enhanced the film growth and removed defects in the film such as -H, -OH, and E' centers. A model on deposition and defect formation mechanisms was proposed based on the thermodynamic Stabilities of resultant HF in the reactions. The AES study showed that the film surface modified by activated oxygen had an increased hardness against electron beams.

Selective Mn Doping of Thin Film Zns:Mn Electroluminescent Devices by Laser Photochemical Vapor Deposition

1982 ◽  
Vol 17 ◽  
Author(s):  
A. Kitai ◽  
G.J. Wolga
Keyword(s):  
Thin Film ◽  
Laser Radiation ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Electroluminescent Devices ◽  
Mn Doping ◽  
Ion Laser ◽  
Photochemical Vapor Deposition ◽  
Manganese Carbonyl

ABSTRACTU.V. laser radiation from a krypton ion laser was used to dissociate manganese carbonyl [Mn2 (CO)10*] at the surface of a ZnS thin film. The resulting Mn deposit was thermally diffused into the film to form a ZnS:Mn thin film electroluminescent (TFEL) device with spatially selective Mn doping. Process parameters and techniques are described as well as electroluminescence measurements on display elements. Finally we suggest applications of this process to future TFEL displays.

The Reaction of NH3 With TiN: Implications for CVD

1995 ◽  
Vol 410 ◽  
Author(s):  
Michelle T. Schulberg ◽  
Mark D. Allendorf ◽  
Duane A. Outka
Keyword(s):  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Reaction Temperature ◽  
Vapor Deposition ◽  
High Probability ◽  
Film Growth ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Surface Sites ◽  
Temperature Programmed

ABSTRACTSince NH3 is an important component of TiN chemical vapor deposition (CVD) processes, understanding the NH3/TiN surface interaction is crucial to developing a model for the overall reaction. Temperature programmed desorption experiments show that NH3 adsorbs molecularly on amorphous TiN surfaces. Chemisorption occurs at only ∼5% of the surface sites, with an activation energy for desorption of 24 kcal/mol. The sticking probability into this state is 0.06 at 100 K. In addition, NH3 adsorbs with high probability into a multilayer state with an activation energy for desorption of 7.3 kcal/mol, similar to that found in other systems. NH3 does not dissociate on TiN. Under CVD conditions, however, the reactivity of NH3 on TiN may increase and surface reactions may play a part in film growth.

Semiconductor Thin Films Grown by Laser Photolysis

1982 ◽  
Vol 17 ◽  
Author(s):  
J.G. Eden ◽  
J.E. Greene ◽  
J.F. Osmundsen ◽  
D. Lubben ◽  
C.C. Abele ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Vapor Deposition ◽  
Film Growth ◽  
Single Photon ◽  
Chemical Vapor ◽  
Intensity Dependence ◽  
Grain Sizes ◽  
Semiconductor Thin Films ◽  
Si Films

ABSTRACTThin (< 1.2 μpm) Ge and Si films have been grown with rates up to 3.6 μm/hr by laser-induced chemical vapor deposition (LCVD) on a variety of substrates. Germanium films grown on amorphous SiO2 (quartz) by photodissociating GeH4 in He at 248 nm (KrF laser) exhibit grain sizes of 0.3 – 0.5 μm that increase only slightly up to the pryolytic threshold for GeH4 (280°C). On (100) NaCl, however, Ge films grown at a substrate temperature of 120°C are expitaxial. The activation energy for the LCVD growth of Ge films (from GeH4) on SiO2 is measured to be 85 ± 20 meV which suggests that germanium is arriving at the substrate in atomic form. The wavelength and intensity dependence of the initial film growth rate supports the conclusion that this process is photolytic and is initiated by the absorption of a single photon.

UV Laser-Induced Metal Deposition on Semiconductors From Electroplating Solutions

1986 ◽  
Vol 75 ◽  
Author(s):  
Joseph Zahavi ◽  
Pehr E. Pehrsson
Keyword(s):  
Laser Radiation ◽  
Schottky Barrier ◽  
Excimer Laser ◽  
Pulse Energy ◽  
Metal Deposition ◽  
Uv Laser ◽  
Sample Characterization ◽  
Excimer Laser Radiation ◽  
193 Nm

AbstractWe have demonstrated metal deposition on semiconductors immersed in electroplating solution by exposure to UV laser radiation. N-type β-SiC and Si in gold or Pd/Ni electroplating solutions were exposed to 20 ns pulses of 193 nm or 248 nm excimer laser radiation. The energy per pulse was 20–100 mJ. Au and Pd/Ni metallizations deposited in lines and circles on SiC showed leaky Schottky barrier I-V characteristics. The thickness increased with increasing pulse energy or number. Both masked and maskless deposition were demonstrated without apparent damage to the substrate. Details of the process, potential mechanisms, and sample characterization are discussed.

The effects of UV laser irradiation on the filament-assisted deposition of diamond

1990 ◽  
Vol 5 (11) ◽  
pp. 2337-2344 ◽  
Author(s):  
F. G. Celii ◽  
H. H. Nelson ◽  
P. E. Pehrsson
Keyword(s):  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Uv Laser ◽  
Si Substrate ◽  
Diamond Deposition ◽  
Diamond Nucleation ◽  
Nucleation Sites ◽  
Scanning Auger Microprobe ◽  
Excimer Laser Radiation

The effects of 193 and 308 nm excimer laser radiation on the filament-assisted chemical vapor deposition (CVD) of diamond were investigated, in attempts to reproduce and quantify the reported mechanism of laser-enhanced diamond deposition. The deposited materials were analyzed using optical microscopy, SEM, scanning Auger microprobe, and micro-Raman scattering. With fluence levels of >50 mJ · cm−2, UV laser irradiation was found to suppress rather than enhance the quantity of diamond deposition. The size, morphology, and Raman spectra of crystallites in the irradiated regions were nearly identical to those in adjacent unirradiated regions of the same sample. An additional laser-induced effect was a region of enhanced etching on the Si substrate, which appeared as a “shadowing” of the diamond crystallites. The results are interpreted in terms of a laser-induced depletion of diamond nucleation sites, and suggest a new method for patterning of CVD films.

Chemical Vapor Deposition of Copper from an Organometallic Source

1990 ◽  
Vol 181 ◽  
Author(s):  
David B. Beach ◽  
William F. Kane ◽  
Francoise K. Legoues ◽  
Christopher J. Knors
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Copper Film ◽  
Chemical Vapor ◽  
Auger Spectroscopy ◽  
Copper Films ◽  
Phosphine Complexes ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTHigh purity copper has been deposited from trialkyl phosphine complexes of cyclopentadienyl and methylcyclopentadienyl copper(I) by thermal chemical vapor deposition (CVD). Films as thick as 4.4 μm have been deposited at growth rates of up to 2000 Å/min with resistivites typically 2.0 μΩ cm, just slightly higher than bulk copper. Depositions were carried out at substrate temperatures between 150 and 220 °C on a variety of substrates including Si, SiO2, polyimide, and Cr/Cu. At low substrate temperatures, copper film growth appears to show some selectivity for transition metal surfaces. An activation energy of 18 kcal/mole has been measured for film growth on Cu seeded substrates. CVD copper films have been characterized by Auger spectroscopy which showed that carbon and oxygen levels are below the limits of detection. Transmission electron microscopy revealed that the copper grain size was ∼0.6μm and the grain boundaries are free of precipitates. Films show good conformality.

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