Structure of the Ti-Single Crystal Si Interface

1990 ◽  
Vol 181 ◽  
Author(s):  
S. Ogawa ◽  
T. Kouzaki ◽  
T. Yoshida ◽  
R. Sinclair
Keyword(s):  
Amorphous Alloy ◽  
Single Crystal ◽  
Amorphous Layer ◽  
Alloy Formation ◽  
Transmission Electron ◽  
Impurity Species ◽  
Before And After ◽  
First Time ◽  
Atomically Flat ◽  
Eds Microanalysis

ABSTRACTThe Ti-single crystal Si interfaces, before and after annealing in argon, were examined by cross section high resolution transmission electron microscopy (HRTEM) combined for the first time with 2nmΦ probe for energy dispersive spectrometry (EDS). HRTEM shows that there is amorphous alloy formation at the Ti-Si interface. The thickness of the reacted layer is ∼1.7nm for single crystal Si, independent of doping level and impurity species such as As and B, and is ∼2.5nm for back sputter-amorphized Si. After annealing at 430°C for 30min, the thickness of the amorphous alloy increases up to ∼11.5nm. High spatial resolution EDS microanalysis has been obtained. The results show that reliable compositions can be deduced at this level since some of the layers are only about 2nm thick. The amorphous alloy formed at the deposition step was found to be Ti55Si45. After annealing, the composition across the amorphous layer varied from about 70%Si near the substrate to about 30%S1 close to the Ti interface. The substrate interface is atomically flat. Interpretation of the behavior in terms of the metastable Ti-Si phase diagram calculated by Holloway and Bormann will be discussed.

scholarly journals The Structure of Oxygen-Implanted (111) Silicon Before and After Heat-Pulse Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
Z. Liliental-Weber ◽  
R. W. Carpenter ◽  
J. C. Kelly
Keyword(s):  
Polycrystalline Silicon ◽  
Defect Density ◽  
Amorphous Layer ◽  
Heat Pulse ◽  
High Defect Density ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Crystalline Substrate ◽  
Before And After ◽  
Buried Layer

ABSTRACTThe structure of (111) oriented, unheated oxygen-implanted silicon (dose -7.3×1016cm-2) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystaline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20s at 800°C, 900°C, or 1000°C, the amorphous layer recrystallized resulting in polycrystalline silicon, rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.

Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy

1996 ◽  
Vol 11 (11) ◽  
pp. 2738-2743 ◽  
Author(s):  
X. Sun ◽  
S. Schneider ◽  
U. Geyer ◽  
W. L. Johnson ◽  
M-A. Nicolet
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Alloy ◽  
Oxidation Process ◽  
Amorphous Layer ◽  
Intermetallic Phases ◽  
Annealing Duration ◽  
Oxide Layer Thickness ◽  
Cross Sectional ◽  
Transmission Electron

The amorphous ternary metallic alloy Zr60Al15Ni25 was oxidized in dry oxygen in the temperature range 310 °C to 410 °C. Rutherford backscattering (RBS) and cross-sectional transmission electron microscopy (TEM) studies suggest that during this treatment an amorphous layer of zirconium-aluminum-oxide is formed at the surface. Nickel was depleted in the oxide and enriched in the amorphous alloy near the interface. The oxide layer thickness grows parabolically with annealing duration, with a transport constant of 2.8 × 10−5 m2/s × exp(−1.7 eV/kT). The oxidation rate may be controlled by the diffusion of Ni in the amorphous alloy. At later stages of the oxidation process, precipitates of nanocrystalline ZrO2 appear in the oxide near the interface. Finally, two intermetallic phases nucleate and grow simultaneously in the alloy, one at the interface and one within the alloy. An explanation involving preferential oxidation is proposed.

The formation of amorphous Ni–B by solid state and ion-beam reaction

1989 ◽  
Vol 4 (6) ◽  
pp. 1303-1306 ◽  
Author(s):  
A. N. Campbell ◽  
J. C. Barbour ◽  
C. R. Hills ◽  
M. Nastasi
Keyword(s):  
Solid State ◽  
Amorphous Alloy ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Alloy Layer ◽  
Polycrystalline Nickel ◽  
First Time ◽  
State Amorphization ◽  
Post Deposition ◽  
Beam Deposition

An amorphous Ni–B alloy was formed at the interfaces between layers of polycrystalline nickel and amorphous boron during electron-beam deposition of Ni/B/Ni trilayer structures. Formation of the amorphous alloy appears to be thermally-assisted and, in addition, the amorphous alloy regions can be extended by post-deposition ion-beam mixing. The existence of an upper limit to the thickness of the amorphous Ni–B alloy layer which forms (40 nm) indicates that the amorphous layer serves as a reaction or diffusion barrier. It has been shown for the first time that an amorphous metal-boron alloy is produced by thermal solid state amorphization reaction (SSAR).

Oxide Ferroelectric /Cuprate Superconductor Heterostructures: Growth and Properties

1991 ◽  
Vol 243 ◽  
Author(s):  
R. Ramesh ◽  
W.K. Chan ◽  
H. Gilchrist ◽  
B. Wilkens ◽  
T. Sands ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cuprate Superconductors ◽  
Large Angle ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Pzt Thin Film ◽  
Before And After ◽  
Retention Characteristics ◽  
Ferroelectric Hysteresis ◽  
Circuit Yield

AbstractFerroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures have been grown on single crystal LaAIO3 and on buffered [100] Si. The cuprate superconductors are used as metal-like bottom electrodes for the subsequent growth of the ferroelectric PZT thin film. Structural studies using x-ray diffraction, and transmission electron microscopy show that the PZT layer is free of large angle grain boundaries (i.e., single crystal-like). Rutherford backscattering studies reveal the composition of the PZT layer to be close to that of the target. Ferroelectric hysteresis measurements using both pulsed measurements and a variable frequency Sawyer-Tower circuit yield remnant polarization values (at 5V) in the range of 15-45μC/cm2 (depending on deposition conditions) with a coercive field in the range of 80-120kV/cm. At a cycling voltage of 5V, these heterostructures exhibit a fatigue lifetime of better than 2x1010 at 40kHz (the polarization decays by only 20% of the initial value). Pulsed poling experiments before and after show that the loss of polarization is reversible. These heterostructures also show excellent aging and logic state retention characteristics.

Hrem and Nano-Scale Microanalysis of the Titanium-Silicon Interfacial Reaction

1990 ◽  
Vol 183 ◽  
Author(s):  
T. Kouzaki ◽  
S. Ogawas ◽  
S. Nakamura
Keyword(s):  
Amorphous Alloy ◽  
Single Crystal ◽  
Interfacial Reaction ◽  
Single Crystal Silicon ◽  
High Resolution Electron Microscopy ◽  
Composition Analysis ◽  
Alloy Formation ◽  
Crystal Silicon ◽  
Nano Scale ◽  
Titanium Silicon

AbstractThe interfacial reaction of titanium with single crystal silicon has been characterized using high-resolution electron microscopy(HREM) combined with nano-scale microanalysis. HREM shows that there is an amorphous interdiffused alloy formation at titanium-silicon interfaces. The reacted layer is about 1.7nm thick for single crystal silicon, but is 2.5nm thick for sputter-amorphized silicon. Annealing increases the thickness of the amorphous alloy. We have used high-spatial-resolution microanalysis to obtain energy dispersive spectrometry (EDS) using a 2nm probe size. The results clearly show that reliable composition analysis can be obtained at this level since some of the layers are only about 2nm thick. It was found that the amorphous alloy composition was Ti55Si45 for the sputter-amorphized silicon. Futhermore we ascertained no induced reaction by 2nm probe electron beam irradiation.

First AlGaN Free-Standing Wafers

2003 ◽  
Vol 764 ◽  
Author(s):  
Yu.V. Melnik ◽  
V.A. Soukhoveev ◽  
K.V. Tsvetkov ◽  
V.A. Dmitriev
Keyword(s):  
Single Crystal ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Transmission Electron ◽  
Temperature Development ◽  
Intense Luminescence ◽  
Uv Emitters ◽  
First Time

AbstractSingle crystal AlGaN bulk materials have been fabricated, for the first time. AlGaN thick (up to 0.6 mm) layers were grown by hydride vapor phase epitaxy on SiC substrates. The substrates were removed resulting in free-standing AlGaN wafers up to 0.5 inch in diameter. Fabricated AlGaN wafers were investigated by x-ray diffraction, transmission electron microscopy (TEM), and cathodoluminescence. X-ray diffraction and TEM studies confirmed single crystal structure of grown material. Based on x-ray diffraction results, AlN concentration in grown material was estimated of about 35 mol.%. Cathodoluminescence measurements demonstrated a number of peaks in UV spectral region with the most intense luminescence at a wavelength of about 325 nm (100 K). The wafers demonstrated n-type conductivity with electron concentration in the 1017 cm-3 range at room temperature. Development of AlGaN substrates with controlled alloy composition may lead to stress-free device epitaxial structures for AlGaN-based transistors and UV emitters and sensors.

Low Temperature - High Pressure Oxidation of 3C-SiC

1994 ◽  
Vol 357 ◽  
Author(s):  
Christine Caragianis-Broadbridge ◽  
Barbara L. Walden ◽  
Juliana Blaser ◽  
Cleva Ow Yang ◽  
David C. Paine
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Pressure Oxidation ◽  
Planar Defects ◽  
Transmission Electron ◽  
Before And After ◽  
Crystal Films ◽  
Film Microstructure

AbstractSingle crystal films of n-type 3C-SiC were hydrothermally processed at pressures ranging from 10 to 70 MPa at 550°C. To study the effects of initial thin film microstructure on hydrothermal processing, two different samples of CVD-grown SiC were studied: one, 200 nm thick, contained low angle boundaries and a high density of planar defects; the other, 3500 nm thick, was planar and contained relatively few defects. Raman Spectroscopy, X-Ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were used to study the chemistry and microstructure of the SiC material both before and after hydrothermal treatment. This study reveals that low temperature (T=550°C) oxidation of single crystal epitaxial SiC is possible but that the resulting oxide film microstructure is strongly dependent on the initial film microstructure and oxidation is greatly enhanced along low angle grain boundaries and on planar defects.

Crystallization of Glass Films on Single-Crystal MgO Substrates

1993 ◽  
Vol 321 ◽  
Author(s):  
Sundar Ramamurthy ◽  
Michael P. Mallamaci ◽  
C. Barry Carter
Keyword(s):  
Single Crystal ◽  
Magnesium Silicate ◽  
Heat Treatments ◽  
Ex Situ ◽  
Transmission Electron ◽  
In Situ Experiments ◽  
Before And After ◽  
Calcium Magnesium ◽  
Glass Films

ABSTRACTThin, calcium magnesium silicate glass films have been deposited onto (001) -oriented single-crystal MgO substrates by pulsed-laser deposition (PLD). The substrates were thinned to electron transparency and characterized in the transmission electron Microscope (TEM) before and after the deposition and following different heat treatments. Energy Dispersive X-ray Spectroscopy (EDS) was used in the TEM to characterize the chemistry of the films. The heat treatments were performed both in situ and ex situ. Direct evidence for crystallization was obtained by in-situ experiments at 950°C. Subsequent heat treatments were performed for longer times in air between 950°C and 1100°C. The crystallized phase was found to be Monticellite (CaMgSiO4) and the crystallites show moderate epitaxy with the underlying substrate. Films contaminated with aluminum resulted in the growth of magnesium aluminate spinel (MgAl2O4) epitaxially from the substrate. These observations of epitaxy indicated that crystallization initiated at the surface of MgO.

An Electron Microscope Study of Interdiffusion and Compound Formation in Ta-Au Thin Films

1973 ◽  
Vol 31 ◽  
pp. 32-33 ◽  
Author(s):  
T. C. Tisone ◽  
S. Lau
Keyword(s):  
Electron Microscope ◽  
Electron Microscope Study ◽  
Thermally Grown Oxide ◽  
Ion Milling ◽  
Compound Formation ◽  
Technology Application ◽  
Transmission Electron ◽  
Before And After ◽  
Au Thin Films

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.

A Novel TEM Technique for Characterizing As-Grown CVD Diamond Films

1991 ◽  
Vol 49 ◽  
pp. 956-957 ◽  
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Dark Field ◽  
Growth Surface ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
First Time ◽  
Microstructural Studies

Microstructural studies by transmission electron microscopy (TEM) of diamond films grown by chemical vapor deposition (CVD) usually involve tedious specimen preparation. This process has been avoided with a technique that is described in this paper. For the first time, thick as-grown diamond films have been examined directly in a conventional TEM without thinning. With this technique, the important microstructures near the growth surface have been characterized. An as-grown diamond film was fractured on a plane containing the growth direction. It took about 5 min to prepare a sample. For TEM examination, the film was tilted about 30-45° (see Fig. 1). Microstructures of the diamond grains on the top edge of the growth face can be characterized directly by transmitted electron bright-field (BF) and dark-field (DF) images and diffraction patterns.

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