Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy

1996 ◽  
Vol 11 (11) ◽  
pp. 2738-2743 ◽  
Author(s):  
X. Sun ◽  
S. Schneider ◽  
U. Geyer ◽  
W. L. Johnson ◽  
M-A. Nicolet
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Alloy ◽  
Oxidation Process ◽  
Amorphous Layer ◽  
Intermetallic Phases ◽  
Annealing Duration ◽  
Oxide Layer Thickness ◽  
Cross Sectional ◽  
Transmission Electron

The amorphous ternary metallic alloy Zr60Al15Ni25 was oxidized in dry oxygen in the temperature range 310 °C to 410 °C. Rutherford backscattering (RBS) and cross-sectional transmission electron microscopy (TEM) studies suggest that during this treatment an amorphous layer of zirconium-aluminum-oxide is formed at the surface. Nickel was depleted in the oxide and enriched in the amorphous alloy near the interface. The oxide layer thickness grows parabolically with annealing duration, with a transport constant of 2.8 × 10−5 m2/s × exp(−1.7 eV/kT). The oxidation rate may be controlled by the diffusion of Ni in the amorphous alloy. At later stages of the oxidation process, precipitates of nanocrystalline ZrO2 appear in the oxide near the interface. Finally, two intermetallic phases nucleate and grow simultaneously in the alloy, one at the interface and one within the alloy. An explanation involving preferential oxidation is proposed.

Implant Damage in AlGaAs Based Superlattices and Alloys at 77K

1989 ◽  
Vol 147 ◽  
Author(s):  
E. A. Dobisz ◽  
H. Dietrich ◽  
A. W. McCormick ◽  
J. P. Harbison
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Layer Thickness ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Current Work ◽  
Cross Sectional ◽  
Bulk Gaas ◽  
Transmission Electron ◽  
Extensive Damage

AbstractPreviously, it was shown that superlattices implanted with Si at 77K, exhibited more extensive damage and uniform compositional mixing upon subsequent annealing than samples implanted at room temperature.[l,2] The current work focuses on the damage in samples implanted with Si at 77K. The study shows that for a given dose, the amount of damage depends upon the layer thickness and the composition. Specimens of bulk GaAs, Al 3Ga. 7As, 7.5 nm GaAs -10 nm Al. 3Ga. 7As superlattice (SL1), 5.5 nm GaAs −3.5 nm AlAs superlattice (SL2), and 8.0 nm GaAs −8.0 nm AlAs superlat-tice (SL3) were implanted at 77K with 100 KeV Si, with doses ranging from 3 × 1013 cm−2 to 1 × 1015 cm−2. The samples were examined by ion channelling and cross sectional transmission electron microscopy (TEM). At 77K and a dose of 1 × 1014 cm−2, the GaAs and SLi showed an amorphous layer, while no damage peak was observed in SL2. The 77K amorphization thresholds of the Al 3Ga. 7As alloy, SL2, and SL3 were 2.5 × 1014 cm−2, 4 × 1014 cm−2, and 1 × 1015 cm−2 respectively. The sharpness of the amorphization threshold varied with the material.

Role of Implant Energy on Defect Structures for Phosphorus Implanted Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
S. Prussin ◽  
Kevin S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Range ◽  
Amorphous Layer ◽  
The Other ◽  
Defect Structures ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Good Contact

AbstractA series of 18 wafers were implanted with phosphorus ions covering an energy range of 25 to 180 keV at a dose of 1 × 1015 cm−2 using a Waycool end station which provides good contact between the wafers and a thermal sink. Half the wafers had {100} surfaces and the other half {111} surfaces. The morphology of the as-implanted surface, defined by the thickness of the amorphous layer and whether that layer was submerged or lay at the surface, was affected by implant energy and surface orientation. After a 550°C regrowth and an activation anneal of 30 minutes at 900°C, the defect structures were evaluated by plan and cross-sectional transmission electron microscopy. A dear correlation was found between the implant morphology, the wafer orientation, and the defect structures.

The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Mark H. Clark ◽  
Kevin S. Jones ◽  
Tony E. Haynes ◽  
Charles J. Barbour ◽  
Kenneth G. Minor ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Amorphous Layer ◽  
Cross Sectional ◽  
Plan View ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Marker Layer ◽  
Process Simulator

ABSTRACTPreamorphization is commonly used to form shallow junction in silicon CMOS devices. The purposeof this experiment was to study the effect of the preamorphizing species' mass on the interstitial concentration at the end-of-range (EOR). Isovalent species of Si, Ge, Sn and Pb were compared. Silicon wafers with a buried boron marker layer (4700 Å deep) were amorphized using implants of 22 keV 28Si+, 32 keV73Ge+, 40 keV 119Sn+ or 45 keV 207Pb+, which resulted in similar amorphous layer depths. All species were implanted at a dose of 5×1014 /cm2. Cross-sectional transmission electron microscopy (XTEM) was used tomeasure amorphous layer depths (approximately 400 Å). Post-implantation anneals were performed at 750 °C for 15 minutes. Plan-view transmission electron microscopy (PTEM) was used to observe and quantify the EOR defect population upon annealing. Secondary ion mass spectrometry (SIMS) was used to monitor the transient enhanced diffusion (TED) of the buried boron marker layer resulting from the EOR damage introduced by the amorphizing implants. Based upon the SIMS results Florida Object Oriented Process Simulator (FLOOPS) calculated the resulting time average diffusivity enhancements. Results showed that increasing the ion mass over a significant range (28 to 207 AMU) not only affects the quantity and type of damage that occurs at the EOR, but results in a reduced diffusivity enhancement.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

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