Effect of Concentration Gradient on Phase Stability

1982 ◽  
Vol 19 ◽  
Author(s):  
K.N. Tu ◽  
U. GöSele
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Intermetallic Compound ◽  
Phase Stability ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Metal Films ◽  
Silicide Formation ◽  
Intermetallic Compound Growth ◽  
Form Alone

ABSTRACTA feature of thin film reaction that is different from the reaction in bulk samples is the tendency to form a single intermetallic compound rather than all of them which are allowed according to the equilibrium phase diagram. For example, in thin film silicide formation, Pd2Si has been found to form alone and to grow as a layer between Pd and Si. The silicide is stable over a wide temperature range of 100 to 700°C. The phenomenon of single intermetallic compound growth is not unique to silicide formation between transition metal films and silicon, but is also commonly observed in reactions between bimetallic thin films. The phenomenon indicates phase stability.

Effect of Microstructure on Phase Formation in Reaction of The Nb/Al Multilayer Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Katayun Barmak ◽  
Kevin R. Coffey ◽  
David A. Rudman ◽  
Simon Foner
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Diagram ◽  
Grain Boundary ◽  
Phase Formation ◽  
Boundary Diffusion ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Thin Layers ◽  
Multilayer Thin Films

AbstractWe investigated the phase formation sequence in the reaction of multilayer thin films of Nb/Al with overall compositions of 25 and 33 at.% AI. We report novel phenomena which distinguish thin-film reactions unequivocally from those in bulk systems. For sufficiently thin layers composition and stability of product phases are found to deviate significantly from that predicted from the equilibrium phase diagram. We demonstrate that in the Nb/Al system the length scales below which such deviations occur is about 150 nm. We believe that these phenomena occur due to the importance of grain boundary diffusion and hence microstructure in these thin films.

Phase Stability and Interface Reactions in the Al-SiC System

1988 ◽  
Vol 120 ◽  
Author(s):  
Doh-Jae Lee ◽  
Mark D. Vaudin ◽  
Carol A. Handwerker ◽  
Ursula R. Kattner
Keyword(s):  
Phase Diagram ◽  
Phase Stability ◽  
Equilibrium Phase ◽  
Analytical Electron Microscopy ◽  
Equilibrium Phase Diagram ◽  
Grain Structure ◽  
Particulate Composites ◽  
Matrix Composites ◽  
Interface Reactions ◽  
Analytical Electron

AbstractThe Al-SiC system has been used as a model system in an examination of phase stability in the presence of a liquid phase and microstructure development in metal-matrix composites. The Al-Si-C phase diagram has been calculated for temperatures between 500°C and 1500°C. The phases formed between Al(liquid) and SiC at 920°C have been determined experimentally, using analytical electron microscopy, in both fiber and particulate composites and compared with what is predicted from the equilibrium phase diagram. The morphologies and the spatial distributions of phases have also been examined in addition to the phase analysis. The only phases found were Al, Al4C3, SiC, and Si. Although Al4SiC4 is calculated to be stable at 920°C, it was not found. The SiC grain structure was found to influence strongly the morphology of the Al4C3-SiC and Al-SiC interfaces.

High-Throughput Evaluation of Crystallization Temperature of Pd-Cu-Si System Using Integrated Thin Film Samples

2010 ◽  
Vol 654-656 ◽  
pp. 2426-2429 ◽  
Author(s):  
Yuko Aono ◽  
Junpei Sakurai ◽  
Akira Shimokohbe ◽  
Seiichi Hata
Keyword(s):  
Thin Film ◽  
Phase Diagram ◽  
Amorphous Alloy ◽  
High Throughput ◽  
Crystallization Temperature ◽  
Evaluation Method ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
The Difference ◽  
Si Thin Film

In this paper, a new high-throughput evaluation method for crystallization temperature (Tx) of thin film amorphous alloy is introduced. For measurement of Tx on integrated thin film samples, thermography is used. The order of one hundred Pd-Cu-Si thin film amorphous samples with different composition are integrated on one chip and measured their Tx at once. The validity of measured Tx are examined by comparing with results of differential scanning calorimeter that is a conventional method for Tx measurement, and equilibrium phase diagram of Pd-Si. As results, the difference of two methods is within 10 K and the trend of Tx map has strong correlation with the phase diagram, respectively.

A Study of Intermetallic Compound Development In Nickel-Tin Interfacial Zones

1984 ◽  
Vol 40 ◽  
Author(s):  
Charles W. Allen ◽  
Mark R. Fulcher ◽  
Amarjit S. Rai ◽  
Gordon A. Sargent ◽  
Albert E. Miller
Keyword(s):  
Phase Diagram ◽  
Intermetallic Compound ◽  
Thin Layer ◽  
Room Temperature ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Nickel Surface ◽  
X Ray Diffraction ◽  
Intermetallic Formation ◽  
X Ray

AbstractInterdiffusion and intermetallic formation in Ni-Sn interfacial zones are examined by X-ray diffraction in samples prepared by electroplating of Sn at room temperature. For the case of plating directly onto electropolished nickel, only very sluggish formation of Ni3Sn4 was observed at 190 C. In contrast, when the nickel surface is chemicaly or chemically-abrasively activated prior to plating, a thin layer of Ni3Sn forms at the initial interface at room temperature, and subsequent annealing at 100 and 190 C produces all intermetallics predicted by the equilibrium phase diagram including Ni3Sn, indicating that the absence of Ni3Sn usually observed arises from its failure to nucleate.

Intermetallic Formation in the Aluminum–Copper System

2003 ◽  
Vol 10 (04) ◽  
pp. 677-683 ◽  
Author(s):  
E. B. Hannech ◽  
N. Lamoudi ◽  
N. Benslim ◽  
B. Makhloufi
Keyword(s):  
Electron Microscopy ◽  
Phase Diagram ◽  
Solid Solution ◽  
Intermetallic Layer ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Diffusion Couples ◽  
Intermetallic Formation ◽  
Parabolic Law ◽  
Scanning Electron

Intermetallic formation at 425°C in the aluminum–copper system has been studied by scanning electron microscopy using welded diffusion couples. Several Al–Cu phases predicted by the equilibrium phase diagram of the elements and voids taking place in the diffusion zone have been detected in the couples. The predominant phases were found to be Al 2 Cu 3 and the solid solution of Al in Cu, α. The growth of the intermetallic layer obeyed the parabolic law.

Equilibrium phase diagram of polystyrene and 8CB

1999 ◽  
Vol 37 (15) ◽  
pp. 1841-1848 ◽  
Author(s):  
Farida Benmouna ◽  
Abdelylah Daoudi ◽  
Fr�d�rick Roussel ◽  
Jean-Marc Buisine ◽  
Xavier Coqueret ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram

scholarly journals Formation of Intermediate Phases and Supersaturated Solid Solution in Al-Cu System during Diffusion

2018 ◽  
Vol 383 ◽  
pp. 31-35 ◽  
Author(s):  
Alexey Rodin ◽  
Nataliya Goreslavets
Keyword(s):  
Phase Diagram ◽  
Solid Solution ◽  
High Temperature ◽  
Chemical Composition ◽  
Low Temperature ◽  
Supersaturated Solid Solution ◽  
Diffusion Processes ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Intermediate Phases

The study of diffusion processes in the aluminum - copper system was carried out at the temperature 350 and 520 °C. Special attention was paid on the chemical composition of the system near Al/Cu interface. It was determined that the intermediate phases in the system, corresponding to the equilibrium phase diagram, were not formed at low temperature. At high temperature the intermediate phases forms starting with Cu - rich phases. In both cases supersaturated solid solution of copper in aluminum could be observed near the interface.

scholarly journals Equilibrium Phase Diagram of the Zn–Ag Alloy

2018 ◽  
Vol 20 (3) ◽  
pp. 72-84
Author(s):  
Alexey Korolev ◽  
◽  
Gennagy Maltsev ◽  
Konstantin Timofeev ◽  
Vladimir Lobanov ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram
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