Mbe Growth of Strained-Layer InSb/InAlSb Structures

1990 ◽  
Vol 198 ◽  
Author(s):  
C.R. Whitehouse ◽  
C.F. Mcconville ◽  
G.M. Williams ◽  
A.G. Cullis ◽  
S.J. Barnett ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Critical Thickness ◽  
Multiple Quantum ◽  
Material System ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
X Ray ◽  
Strained Layer ◽  
Transmission Electron ◽  
Layer Structures

ABSTRACTThe MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.

MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers

2013 ◽  
Vol 552 ◽  
pp. 389-392 ◽  
Author(s):  
Tian Cheng Zhang ◽  
Qin Fei Ni ◽  
Xue Zhen Liu ◽  
Bin Yu ◽  
Yu Xia Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Energy Band Structure ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
One Dimensional ◽  
X Ray ◽  
Growth Quality

2.3 μm InGaAsSb/AlGaAsSb lasers with multiple quantum wells(MQWs) have been demonstrated.The growth temperature of quantum wells is 440°C,and the growth quality of InGaAsSb/AlGaAsSb MQWs is examined by X-ray diffraction and Photoluminescence(PL) at room temperature.The energy band structure of MQWs was calculated by one-dimensional finite-difference method(1D-FDM)

X-Ray Scattering (Modeling and Experiment) of InxGa1-xAs/GaAs Multiple Quantum Wells

1987 ◽  
Vol 103 ◽  
Author(s):  
Jichai Jeong ◽  
J. C. Lee ◽  
M. A. Shahid ◽  
T. E. Schlesinger ◽  
A. G. Milnes
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Good Agreement

ABSTRACTX-ray diffraction, transmission electron microscopy (TEM), and photoluminescence measurements have been made on strained InxGa1-xAs/GaAs quantum well structures. The well widths measured from TEM are 187, 115 and 69 Å for an interrupted growth, and 218, 126, 60 Å for a non-interrupted growth. In the measured x-ray diffraction patterns, the Pendellosung fringes due to GaAs barriers are modulated by a broad weak peak mostly coming from the thickest InxGa1-xAs well layer and is fairly symmetric for the noninterrupted sample. For the interrupted quantum well, the x-ray diffraction pattern is less symmetric, since there is further modulation by another broader and weaker peak. This results show that the In content in the InxGa1-xAs well layers are not well controlled for the interrupted quantum well. Using actual thickness measured from TEM, x-ray diffraction patterns are calculated and good agreement is obtained between the measured and the calculated x-ray diffraction patterns. The three strained InxGa1-xAs/Gaks quantum wells grown without interruption produce high intensity and narrow full-width at half-maximum (FWHIM) of 2.9 meV of the photoluminescence peak. The photoluminescence peaks for the interrupted quantum well are relatively broad and asymmetric, and have lower intensities, indicating that better quality InxGa1-xAs/GaAs quantum wells can be grown without interruption.

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

1995 ◽  
Vol 417 ◽  
Author(s):  
F. Peiró ◽  
A. Cornet ◽  
J. C. Ferrer ◽  
J. R. Morante ◽  
G. Halkias ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

Phase Separation in InGaN/GaN Multiple Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
M. D. Mccluskey ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
D. P. Bour ◽  
C. Chua ◽  
...  
Keyword(s):  
Phase Separation ◽  
Active Region ◽  
Quantum Wells ◽  
Broad Peak ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Peaks

AbstractEvidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

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