Radiation Damage and its Annealing in Semiconductors

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher
Keyword(s):  
Conventional Heating ◽  
Plan View ◽  
Defect Clusters ◽  
Section Electron ◽  
Residual Damage ◽  
Point Defect Clusters ◽  
Microscopy Techniques ◽  
Flame Annealing ◽  
Pulsed Laser Irradiation

ABSTRACTResidual damage in the form of point defect clusters and amorphous regions has been investigated in ion and neutron irradiated silicon specimens. Annealing of this damage during conventional heating, flame annealing, and pulsed laser irradiation has been studied by plan-view and cross-section electron microscopy techniques. These results provide detailed information on annealing mechanisms, and emphasize the characterization of damage in the as-irradiated state.

Solid-Phase-Epitaxial Growth of Ion Implanted Silicon Using CW Laser and Electron Beam Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
J. Narayan ◽  
O. W. Holland ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Solid Phase ◽  
Furnace Annealing ◽  
Plan View ◽  
Dopant Segregation ◽  
Cw Laser ◽  
Retrograde Solubility ◽  
Section Electron ◽  
Residual Damage ◽  
Section Electron Microscopy

ABSTRACTThe nature of residual damage in As+, Sb+, and In+ implanted silicon after CW laser and e− beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500–600°C have been previously reported [1] and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or cw laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.

Characterization of Point Defect Generation, Migration and Coalescence in Irradiated SiC by Atomistic Simulation

2007 ◽  
Vol 1043 ◽  
Author(s):  
David Farrell ◽  
Noam Bernstein ◽  
Wing Kam Liu
Keyword(s):  
Point Defect ◽  
Nuclear Power ◽  
Large Scale ◽  
The United States ◽  
Ceramic Composites ◽  
Atomic Scale ◽  
Empirical Potential ◽  
Defect Clusters ◽  
Point Defect Clusters

AbstractRenewed interest in nuclear power in the United States has prompted investigations into new reactor designs, resulting in a need to gain a greater understanding of the properties of the materials which are proposed for use in next generation nuclear reactors. This presentation will focus on preliminary results of large-scale empirical potential atomistic studies into the generation of point defect clusters in 3C SiC by particle irradiation and the evolution from point defect clusters to ‘voids’ on the atomic scale. Our working definition of ‘void’ will be explained in the context of small length-scale simulations. The determination of interstitial and vacancy diffusivities for the empirical potential employed and its impact on defect coalescence will be discussed. The characterization of initial damage states for given irradiation conditions will be presented and compared to previous work on ceramics and ceramic-composites.

Characterization of point-defect clusters by TEM

1976 ◽  
Vol 24 (2) ◽  
pp. 147-152 ◽  
Author(s):  
J.B Mitchell ◽  
W.L Bell
Keyword(s):  
Point Defect ◽  
Defect Clusters ◽  
Point Defect Clusters

Characterization of Point Defect Clusters by 2-1/2-D TEM

1975 ◽  
Vol 33 ◽  
pp. 160-161
Author(s):  
B. Mitchell ◽  
W. L. Bell
Keyword(s):  
Point Defect ◽  
Structural Defects ◽  
Size Distributions ◽  
Dislocation Loops ◽  
Number Density ◽  
Crystalline Materials ◽  
Defect Clusters ◽  
Black Spots ◽  
Point Defect Clusters

Many of the TEM studies of radiation damage in crystalline materials have been directed toward illucidating the nature, number density, and size distributions of the primary structural defects resulting from the displacement of atoms from their normal lattice sites, i.e., "black spots." The "black spots" have been identified as either nonresolvable dislocation loops or planar clusters of self interstitials or vacancies by TEM techniques and diffraction contrast theories that are described in the book by Hirsch, et al. and the reviews by Ruhle and Eyre. An indispensable part of the studies of point defect clusters is the identification of their character (vacancy or interstitial).

scholarly journals Дефектная структура слоев GaAs, имплантированных ионами азота

2018 ◽  
Vol 44 (18) ◽  
pp. 24
Author(s):  
Н.А. Соболев ◽  
А.Е. Калядин ◽  
К.В. Карабешкин ◽  
Р.Н. Кютт ◽  
В.М. Микушкин ◽  
...  
Keyword(s):  
Dose Range ◽  
Gaas Layer ◽  
Extended Defects ◽  
X Ray Diffraction ◽  
Initial State ◽  
X Ray ◽  
Defect Clusters ◽  
Transmission Electron ◽  
Point Defect Clusters ◽  
Microscopy Techniques

AbstractStructural defects formed in epitaxial GaAs layers as a result of 250-keV N^+ ion implantation to doses within 5 × 10^14–5 × 10^16 cm^–2 have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques. No amorphization of the ion-implanted layer took place in the entire dose range studied. The implantation to doses of 5 × 10^14 and 5 × 10^15 cm^–2 led to the appearance of an additional peak on XRD curves, which was related to the formation of a stressed GaAs layer with positive deformation arising due to the formation of point-defect clusters. The implantation to a dose of 5 × 10^16 cm^–2 led to the formation of a dense structure of extended defects in the implanted layer, which was accompanied by the relaxation of macrostresses to the initial state.

scholarly journals Biofilm Formation in Xanthomonas arboricola pv. pruni: Structure and Development

Agronomy ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 546
Author(s):  
Pilar Sabuquillo ◽  
Jaime Cubero
Keyword(s):  
Biofilm Formation ◽  
Extracellular Polymeric Substances ◽  
Environmental Changes ◽  
Nutrient Content ◽  
Infection Process ◽  
Bacterial Attachment ◽  
Key Factors ◽  
Cell Structures ◽  
Microscopy Techniques

Xanthomonasarboricola pv. pruni (Xap) causes bacterial spot of stone fruit and almond, an important plant disease with a high economic impact. Biofilm formation is one of the mechanisms that microbial communities use to adapt to environmental changes and to survive and colonize plants. Herein, biofilm formation by Xap was analyzed on abiotic and biotic surfaces using different microscopy techniques which allowed characterization of the different biofilm stages compared to the planktonic condition. All Xap strains assayed were able to form real biofilms creating organized structures comprised by viable cells. Xap in biofilms differentiated from free-living bacteria forming complex matrix-encased multicellular structures which become surrounded by a network of extracellular polymeric substances (EPS). Moreover, nutrient content of the environment and bacterial growth have been shown as key factors for biofilm formation and its development. Besides, this is the first work where different cell structures involved in bacterial attachment and aggregation have been identified during Xap biofilm progression. Our findings provide insights regarding different aspects of the biofilm formation of Xap which improve our understanding of the bacterial infection process occurred in Prunus spp and that may help in future disease control approaches.

The Preparation and Characterization of Expanded Graphite via Microwave Irradiation and Conventional Heating for the Purification of Oil Contaminated Water

2019 ◽  
Vol 19 (2) ◽  
pp. 1122-1125 ◽  
Author(s):  
Thinh Van Pham ◽  
Thuong Thi Nguyen ◽  
Duy Trinh Nguyen ◽  
Tran Van Thuan ◽  
Phuong Quynh Thi Bui ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Expanded Graphite ◽  
Conventional Heating ◽  
Contaminated Water
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