Synthesis and Film Investigation of Titania

2013 ◽  
Vol 832 ◽  
pp. 128-131
Author(s):  
Sharipah Nadzirah ◽  
Uda Hashim
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Titanium Dioxide ◽  
Sol Gel ◽  
Titanium Butoxide ◽  
Before And After ◽  
Scanning Electron ◽  
Spin Coater

Titania or titanium dioxide (TiO2) thin film has been synthesized via sol-gel method with monoethanolamine (MEA) as a catalyst. The mixing of titanium butoxide as a precursor, ethanol as a solvent and MEA were stirred using magnetic stirrer under ambient temperature [. The TiO2solution prepared then was deposited on SiO2substrates using spin-coater and the coated films were annealed at 600°C. Finally, both before and after annealed TiO2thin films were characterized using Field Emission Scanning Electron Microscopy (FESEM). The obtained results show the different TiO2particles formation before and after annealed.

scholarly journals KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Impedance Spectroscopy ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Barium Strontium ◽  
Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Sol-Gel Synthesis and Characterization of BiFeO3-PbTiO3 Thin Films

2007 ◽  
Vol 997 ◽  
Author(s):  
Ashish Garg ◽  
Soumya Kar ◽  
Anju Dixit ◽  
D C Agrawal
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Sol Gel ◽  
Grazing Incidence ◽  
Synthesis And Characterization ◽  
Sol Gel Synthesis ◽  
Polycrystalline Form ◽  
Scanning Electron

AbstractIn this work, we report on the synthesis and characterization of thin films of (BiFeO3)1−x (PbTiO3)x (BFPT) solid solutions of compositions around morphotropic phase boundary (MPB) grown on platinized silicon (111) Pt/TiO2/SiO2/Si substrate by sol-gel based spin coating technique. The films were post-annealed at 700 and 750°C for 1 h in air. Morphological analysis of the films was carried out by scanning electron microscopy. Grazing incidence X-ray diffractometry revealed the perovskite structure of the films and peaks suggested the presence of rhombohedral structured pure BFPT phase in polycrystalline form. Scanning electron microscopy suggested that films annealed at 750degC had a denser microstructure as compared to those at 700°C. The room temperature dielectric constant of the films with composition of BF:PT :: 75:25 was measured to be ∼1200 at a frequency of 100 kHz.

Structural Properties of Sn-Doped ZnO Thin Films Deposited on Glass Substrate Using Sol-Gel Immersion Method

2015 ◽  
Vol 1109 ◽  
pp. 568-571
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
M.H. Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Zinc Oxide ◽  
Glass Substrate ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Immersion Method ◽  
Doped Zno ◽  
Scanning Electron

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).

scholarly journals ANALISIS STRUKTUR NANO DARI LAPISAN TIPIS COBALT FERRITE YANG DIPREPARASI DENGAN METODE SPUTTERING

2017 ◽  
Vol 18 (01) ◽  
pp. 46-53 ◽  
Author(s):  
Ramli Ramli ◽  
Riri Jonuarti ◽  
Ambran Hartono
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Crystallite Size ◽  
Flow Rate ◽  
Cobalt Ferrite ◽  
Growth Parameter ◽  
Deposition Pressure ◽  
Scanning Electron

In this paper we report the results of studies relating to the synthesis of Cobalt Ferrite (CoFe2O4) thin films by a sputtering method. The CoFe2O4 thin film has been prepared onto silicon substrate from the sputtering targets, CoFe. Structural propertiesofthinfilms were characterized byx-ray diffraction and the morphology was characterized by scanning electron microscopy. The growth parameter are: base pressure 2,8 x 10-2 Torr, ratio of Argon:Oxygen flow rate are 100:50 sccm, deposition pressure 5.4 x10-1 Torr, growth temperature 100oC.Nanostructures of the thin film that have been analyzed are crystallite size and micro strain.We obtained the crystallite size of CoFe2O4 thin films for layer thickness of 40 and 48 nm, respectively are: 32 nm and 66 nm, while the micro strain is 8.0 x 10-4 and 10.2 x 10-4.

Ferroelectric properties in all solution prepared Bi6Fe2Ti3O18/Ba0.92La0.08SnO3 thin films

2016 ◽  
Vol 30 (35) ◽  
pp. 1650394
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Coercive Field ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Scanning Electron

In this paper, all solution processing is used to prepare both the transparent conducting Ba[Formula: see text]La[Formula: see text]SnO3 (BLSO) thin films as bottom electrodes and ferroelectric Bi6Fe2Ti3O[Formula: see text] (BFTO) thin films. The derived BFTO thin films are characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The derived thin film is polycrystalline with dense microstructures. The remnant polarization [Formula: see text] at the measurement frequency of 2 kHz can reach [Formula: see text] under the 500 kV/cm electric field and the coercive field [Formula: see text] is 410 kV/cm. The results will provide a feasible route to prepare BFTO thin films on transparent conducting bottom electrodes to realize multifunctionality.

Effect of TiO2 Nanofiller on Nanocomposited PMMA/TiO2 Thin Film

2012 ◽  
Vol 576 ◽  
pp. 417-420 ◽  
Author(s):  
N.N. Hafizah ◽  
Ismail Lyly Nyl ◽  
M.Z. Musa ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Spin Coating ◽  
Weight Percentage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nanocomposite Thin Films ◽  
Scanning Electron

In this study, PMMA/TiO2 nanocomposite thin films were prepared by using sonication spin coating technique. The PMMA and TiO2 solution were mixed together and sonicated for 1h to confirm the homogeneity of the sample. The thin films obtained were then measured using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and Fourier transform infrared (FTIR). FESEM micrograph reveals that the uniformity increases with the increase of TiO2 weight percentage.

scholarly journals Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

2015 ◽  
Vol 6 ◽  
pp. 336-342 ◽  
Author(s):  
Jacques Perrin Toinin ◽  
Alain Portavoce ◽  
Khalid Hoummada ◽  
Michaël Texier ◽  
Maxime Bertoglio ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
High Dose ◽  
Transmission Electron ◽  
Scanning Electron ◽  
Thin Film Production

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.

Structural and Optical Properties of Cu2MnSnS4 Thin Film Fabricated by Sol-Gel Technique

2015 ◽  
Vol 814 ◽  
pp. 39-43 ◽  
Author(s):  
Lei Lei Chen ◽  
Hong Mei Deng ◽  
Ke Zhi Zhang ◽  
Ling Huang ◽  
Jian Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gel Technique ◽  
Scanning Electron

Cu2MnSnS4 thin film was successfully prepared by a sol-gel technique on soda lime glass substrate from metal salts and thiourea. The structural and morphological properties of the fabricated film were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The combination of the X-ray diffraction results and Raman spectroscopy reveal that this obtained layer is composed by Cu2MnSnS4 phase and has a stannite structure with preferential orientation along the (112) direction. The scanning electron microscopy and atomic force microscopy results show that the synthesized thin film is smooth and compact without any visible cracks or pores. The band gap of the Cu2MnSnS4 thin film is about 1.29 eV determined by the UV-vis-NIR absorption spectra measurement, which indicates it has potential applications in solar cells.

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