SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors
2015 ◽
Vol 1088
◽
pp. 81-85
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Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.
2012 ◽
Vol 476-478
◽
pp. 2059-2062
2021 ◽
Vol 12
(5)
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pp. 6580-6588
2012 ◽
Vol 198-199
◽
pp. 99-102
2010 ◽
Vol 152-153
◽
pp. 1683-1686
1990 ◽
Vol 04
(05)
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pp. 369-373
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