Atmospheric Pressure Chemical Vapor Deposition of Gallium Nitride Thin Films

1990 ◽  
Vol 204 ◽  
Author(s):  
Roy G. Gordon ◽  
David M. Hoffman ◽  
Umar Riaz
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Rutherford Backscattering ◽  
Transmission Electron ◽  
Pressure Chemical

ABSTRACTThe atmospheric-pressure chemical vapor deposition of gallium nitride films from hexakis(dimethylamido)digallium, Ga2(NMe2)6, and ammonia precursors at 200 °C with growth rates up to 1000 Å/min is described. The films were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Rutherford backscattering analysis showed that the N/Ga ratio was 1.12–1.17. The films were crystalline with ≃ 5–15 nm crystallites.

Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

1991 ◽  
Vol 6 (1) ◽  
pp. 5-7 ◽  
Author(s):  
Roy G. Gordon ◽  
David M. Hoffman ◽  
Umar Riaz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Rutherford Backscattering ◽  
Transmission Electron ◽  
Pressure Chemical

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings using hexakis(dimethylamido)dialuminum, Al2(NMe2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. The films were deposited at 200–250 °C with growth rates up to 1000 Å/min. They displayed good adhesion to silicon, vitreous carbon, and glass substrates and were chemically inert, except to concentrated hydrofluoric acid. Rutherford backscattering analysis showed that the N/Al ratio ranged from 1.1 to 1.2. Refractive indexes were 1.8–1.9. The films were smooth and amorphous by transmission electron microscopy.

Chemical vapor deposition of aluminum nitride thin films

1992 ◽  
Vol 7 (7) ◽  
pp. 1679-1684 ◽  
Author(s):  
Roy G. Gordon ◽  
Umar Riaz ◽  
David M. Hoffman
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Rutherford Backscattering ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Quartz Substrates

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, Al2(N(CH3)2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100–500 °C with growth rates up to 1500 Å/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15 ± 0.05 for films deposited at 100–200 °C and 1.05 ± 0.05 for those deposited at 300–500 °C. Films deposited at 100–200 °C had refractive indexes in the range 1.65–1.80 whereas indexes for films deposited at 300–400 °C were 1.86–2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 °C to 5.77 eV for those deposited at 500 °C. Films deposited at 100–200 °C were amorphous whereas those deposited at 300–500 °C were polycrystalline.

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia

1996 ◽  
Vol 11 (4) ◽  
pp. 989-1001 ◽  
Author(s):  
Joshua N. Musher ◽  
Roy G. Gordon
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Scanning Electron Micrographs ◽  
X Ray ◽  
High Ammonia ◽  
Pressure Chemical

Near stoichiometric titanium nitride (TiN) was deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia using atmospheric pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments provided kinetic data and continuous operation uniformly coated 150-mm substrates. Growth rate, stoichiometry, and resistivity are examined as functions of deposition temperature (190−420 °C), ammonia flow relative to TDMAT (0−30), and total gas-flow rate (residence time 0.3−0.6 s). Films were characterized by sheet resistance measurements, Rutherford Backscattering Spectrometry, and X-Ray Photoelectron Spectrometry. Films deposited without ammonia were substoichiometric (N/Ti, 0.6−0.75), contained high levels of carbon (C/Ti = 0.25−0.40) and oxygen (O/Ti = 0.6−0.9), and grew slowly. Small amounts of ammonia (NH3/TDMAT ≥ 1) brought impurity levels down to C/Ti, 0.1 and O/Ti = 0.3−0.5. Ammonia increased the growth rates by a factor of 4−12 at temperatures below 400 °C. Films 500 Å thick had resistivities as low as 1600 μΩ-cm when deposited at 280 °C and 1500 μΩ-cm when deposited at 370 °C. Scanning electron micrographs indicate a smooth surface and poor step coverage for films deposited with high ammonia concentrations.

Heteroepitaxial Si1-x-yGex Cy Layer Growth on (100)Si by Atmospheric Pressure Chemical Vapor Deposition

1995 ◽  
Vol 399 ◽  
Author(s):  
Z. Atzmon ◽  
A. E. Bair ◽  
T. L. Alford ◽  
D. Chandrasekhar ◽  
David J. Smith ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Good Crystallinity ◽  
Pressure Chemical

ABSTRACTThin heteroepitaxial films of Si1-x-yGexCy have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 550 and 700°C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry (ion channeling), secondary-ion-mass-spectrometry and cross-sectional transmission electron microscopy. SiGeC films with up to 2% C were grown at 700°C with good crystallinity and very few interracial defects, while misfit dislocations at the SiGe/Si interface were observed for SiGe films grown under the same conditions. This difference indicates that the presence of carbon in the SiGe matrix increases the critical thickness of the grown layers. SiGeC thin films (>110 nm) with up to 3.5% C were grown at 550°C with good crystallinity. The crystallinity of the films grown at lower temperature (550°C) was less sensitive to the flow rate of the C source (C2H4), which enabled growth of single crystal SiGeC films with higher C content.

Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

2003 ◽  
Vol 804 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Rutherford Backscattering ◽  
Chemical Vapor Deposition Reactor ◽  
Metal Nitrates ◽  
Metal Silicate ◽  
Pressure Chemical

ABSTRACTA modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

Trimethylamine Gallane as a Precursor to Cubic Gallium Nitride and Gallium Arsenide. Metal Hydride Chemical Vapor Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
Wayne L. Gladfelter ◽  
Jen-Wei Hwang ◽  
Everett C. Phillips ◽  
John F. Evans ◽  
Scott A. Hanson ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical ◽  
Elemental Arsenic

ABSTRACTCyclo-trigallazane, [H2GaNH2]3, is known to form bulk powders of the new cubic phase of gallium nitride upon pyrolysis. An explanation for this unusual example where the molecular structure of the precursor controls the crystal structure of the solid state product is presented. In a hot-wall atmospheric pressure chemical vapor deposition (CVD) reactor, arsine was found to react with TMAG to form films of polycrystalline GaAs which were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth rates for smooth films was 1-4 μm/h. In a low pressure CVD reactor, elemental arsenic vapor was also found to react with the TMAG to give GaAs thin films.

Low Temperature Preparation of Gallium Nitride Thin Films

1992 ◽  
Vol 242 ◽  
Author(s):  
Roy G. Gordon ◽  
David M. Hoffman ◽  
Umar Riaz
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Transmission Electron ◽  
Low Temperature Preparation ◽  
Pressure Chemical ◽  
Substrate Temperatures ◽  
Temperature Preparation

ABSTRACTGallium nitride thin films were prepared by atmospheric pressure chemical vapor deposition from hexakis(dimethylamido)digallium, Ga2(NMe2)6, and ammonia precursors at substrate temperatures of 100–400 °C with growth rates up to 1000 Å/min. The films were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry and forward recoil spectrometry. The N/Ga ratio varied from 1.05 for films deposited at 400 °C to 1.5 at 100 °C. The hydrogen concentration increased from 10 atom % for films deposited at 400 °C to 24 atom % at 100 °C. Films deposited at 100 °C were amorphous but films deposited at higher temperatures were polycrystalline. Bandgaps of the films varied from 3.8 eV for films deposited at 400 °C to 4.2 eV at 100 °C.

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical
Sign in / Sign up

Export Citation Format

Share Document