Electron Mobility In N-Type Epitaxial ZnSe

1990 ◽  
Vol 216 ◽  
Author(s):  
M. Vaziri ◽  
R. Reifenberger
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Impurity Scattering ◽  
Poor Agreement ◽  
Temperature Dependent ◽  
Ionized Impurity Scattering ◽  
Data Call ◽  
Good Agreement

ABSTRACTAn analysis of the temperature dependent mobility in lightly doped ZnSe epitaxial layers grown on a semi-insulating GaAs substrate by Molecular Beam Epitaxy is reported. Our results indicate that the temperature dependence of the mobility is in poor agreement with calculated values based on typical phonon and ionized impurity scattering mechanisms. Good agreement between theory and experimental data call be obtained by including a scattering term associated with the space-charge region surrounding defects.

Hydrodynamic Simulation of Drift Mobility in N-Hg0.8Cd0.2Te

2011 ◽  
Vol 312-315 ◽  
pp. 122-126
Author(s):  
Mebarka Daoudi ◽  
Abderrahmane Belghachi ◽  
Luca Varani ◽  
Christophe Palermo
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Dominant Role ◽  
Impurity Scattering ◽  
Drift Mobility ◽  
Scattering Mechanism ◽  
Hydrodynamic Simulation ◽  
Monte Carlo Calculations ◽  
Ionized Impurity Scattering ◽  
Good Agreement

In this paper, the transport properties of Hg0.8Cd0.2Te have been investigated at 77 K using the hydrodynamic model. We remarked that ionized impurity scattering mechanism plays a dominant role in this material at low electric field. The drift velocity, mean energy and drift mobility are determined as functions of the electric field strength. Comparison is made with Monte Carlo calculations and experimental results. The obtained velocity-field curve is in good agreement with reported experimental data.

Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Kazushi Nakano ◽  
Takao Miyajima ◽  
Katsuhiro Akimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam

From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD

1993 ◽  
Vol 312 ◽  
Author(s):  
D. D. Vvedensky ◽  
T. Shitarat ◽  
P. Smilauer ◽  
T. Kaneko ◽  
A. Zangwill
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Energy ◽  
Atomic Scale ◽  
Basic Model ◽  
Mobile Species ◽  
Local Environments ◽  
Starting Point

AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homoepitaxy of GaAs(001) using metalorganic molecular-beam epitaxy (MOMBE) with triethylgallium (TEG) and precursors and using MOCVD with trimethylgallium (TMG). For MOMBE, the comparisons between simulations and experiments are based on reflection high-energy electron diffraction intensities, by analogy with comparisons made for MBE, while for metalorganic chemical vapor deposition (MOCVD) the simulations are compared to in situ glancingincidence x-ray scattering measurements. In both of these cases, the inclusion of a second mobile species to represent the precursor together with various rules for the decomposition of this molecule (in terms of rates and local environments) with be shown to provide a useful starting point for explaining the general trends in the experimental data and for further refinements of the model.

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

scholarly journals Aluminum nitride doped with transition metal group atoms as a material for spintronics

2020 ◽  
pp. 162-172
Author(s):  
S.S. Khludkov ◽  
◽  
I.A. Prudaev ◽  
L.O. Root ◽  
O.P. Tolbanov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Scientific Literature ◽  
Material Growth ◽  
Metal Group

Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration

Unusual Magnetic Properties of Fe/Ni Bilayers on Cu(100)

2000 ◽  
Vol 648 ◽  
Author(s):  
B. Schirmer ◽  
X. Liu ◽  
M. Wuttig
Keyword(s):  
Magnetic Properties ◽  
Surface Layer ◽  
Molecular Beam Epitaxy ◽  
Exchange Coupling ◽  
Molecular Beam ◽  
Interface Layer ◽  
Temperature Dependent ◽  
Iron Films ◽  
Magnetic Phases ◽  
Rich Variety

AbstractUltrathin iron films grown on Cu(100) have been found to exhibit a rich variety of structural and magnetic phases. In the present work, Fe/Ni bilayers have been prepared by molecular beam epitaxy to explore novel magnetic phenomena introduced by the ferromagnetic (FM) Ni underlayer. Unusual properties have been observed by measuring the temperature dependent magnetic properties. For 5.3 ML Fe on 7 ML Ni, a temperature dependent exchange coupling in the Fe film has been observed between the FM surface layer and FM interface layer.

Extremely uniform In0.08Ga0.92As/GaAs superlattice grown on a (411)A GaAs substrate by molecular beam epitaxy

1998 ◽  
Vol 42 (7-8) ◽  
pp. 1575-1579
Author(s):  
Takahiro Kitada ◽  
Tatsuya Saeki ◽  
Masanobu Ohashi ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam
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