Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

scholarly journals Sub-unit cell layer-by-layer growth of Fe3O4, MgO, and Sr2RuO4 thin films

2003 ◽  
Vol 77 (5) ◽  
pp. 619-621 ◽  
Author(s):  
D. Reisinger ◽  
B. Blass ◽  
J. Klein ◽  
J.B. Philipp ◽  
M. Schonecke ◽  
...  
Keyword(s):  
Thin Films ◽  
Cell Layer ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer

Mbe Growth and Thermoelectric Properties OF Bi2Te3 Thin Films

1998 ◽  
Vol 545 ◽  
Author(s):  
Sunglae Cho ◽  
Yunki Kim ◽  
Antonio DiVenere ◽  
George K. L. Wong ◽  
Jerry R. Meyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Antisite Defect ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
X Ray ◽  
Crystal Bulk

AbstractWe have grown high quality Bi2Te3 thin films on CdTe(111)B substrates using MBE. Structural properties have been investigated using in-situ reflection high-energy electron diffraction (RHEED) and θ-2θ X-ray diffraction analysis. They show that Bi2Te3films on CdTe(111) grow along the (00.l) in the hexagonal cell with a layer-by-layer growth mode, resulting in a smooth surface, and an X-ray Bragg peak FWHM of 0.2°. The thermopower and electrical conductivity of the stoichiometric Bi2Te3 films were ∼200 μV/K and 103(Ωcm)−1, respectively, comparable to the single crystal bulk values. We have observed the antisite defect effect in Te-rich Bi2Te3films: excess Te occupies Bi lattice sites and behaves as an n-type dopant. Crystallinity and transport properties are strongly affected by non-stoichiometry.

Rheed Studies of a-Axis Oriented DyBa2Cu3O7 Films Grown by All-MBE

1997 ◽  
Vol 502 ◽  
Author(s):  
Ivan Bozovic ◽  
J. N. Eckstein ◽  
Natasha Bozovic ◽  
J. O'Donnell
Keyword(s):  
Phase Transitions ◽  
Secondary Phase ◽  
Atomic Layer ◽  
High Energy ◽  
Layer By Layer ◽  
Growth Modes ◽  
Flow Surface ◽  
Surface Phase Transitions

ABSTRACTReal-time, in-situ surface monitoring by reflection high-energy electron diffraction (RHEED) has been the key enabling component of atomic-layer-by-layer molecular beam epitaxy (ALL-MBE) of complex oxides. RHEED patterns contain information on crystallographic arrangements and long range order on the surface; this can be made quantitative with help of numerical simulations. The dynamics of RHEED patterns and intensities reveal a variety of phenomena such as nucleation and dissolution of secondary-phase precipitates, switching between growth modes (layer-by-layer, step-flow), surface phase transitions (surface reconstruction, roughening, and even phase transitions induced by the electron beam itself), etc. Some of these phenomena are illustrated here, using as a case study our recent growth of atomically smooth a-axis oriented DyBa2Cu3O7 films.

Rheed Intensity Oscillation During Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Thin Films

1992 ◽  
Vol 275 ◽  
Author(s):  
K. Yoshikawa ◽  
N. Sasaki
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Growth Interruption ◽  
Layer Deposition ◽  
Unit Cells ◽  
Layered Growth

ABSTRACTUsing in-situ reflection high-energy electron diffraction (RHEED), we studied the growth of Bi-Sr-Ca-Cu-O (BSCCO) thin films prepared by reactive evaporation using layer-by-layer deposition. Bi2Sr2CaCu2Ox(2212) tends to be grown three-dimensionally if it is grown directly on (100) SrTiO3, in contrast to Bi2Sr2CuOx(2201) which is easily grown two-dimensionally on SrTiO3. Two-dimensional 2212 growth can be realized, if a buffer layer of 2201 is deposited on (100) SrTiO3 and growth interruption is utilized after SrO layer deposition. A buffer layer of only two 2201 unit cells improved the surface crystallinity of the substrate for the epitaxial growth of 2212. Growth interruption for two minutes after the 2nd SrO layer in the half unit cell is necessary to keep two-dimensional layered growth. The resulting Tc (zero) is 76 K and Jc (at 4.2 K) is 1.5 × 106 (A/cm2) with these epitaxial films.

Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

2019 ◽  
Vol 3 (8) ◽  
pp. 1538-1544 ◽  
Author(s):  
Tzvi Templeman ◽  
Maayan Perez ◽  
Ofir Friedman ◽  
Ran Eitan Abutbul ◽  
Michael Shandalov ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Layer Growth ◽  
Layer By Layer ◽  
Solution Deposition

In situ synchrotron GIXD showed layer-by-layer growth in solution deposited monocrystalline thin films of lead sulfide on GaAs(111).

Oxygen Pressure Dependence of Morphology of Morphology of La2-xSrxCuO4 Ultra-Thin Films

1997 ◽  
Vol 11 (21n22) ◽  
pp. 981-987
Author(s):  
H. Q. Yin ◽  
T. Arakawa ◽  
Y. Kaneda ◽  
T. Yoshikawa ◽  
N. Haneji ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Dependence ◽  
Film Growth ◽  
Ambient Pressure ◽  
High Energy ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Island Growth ◽  
Experimental Conditions

La 2-x Sr x CuO 4 ultra-thin films with thickness 200 Å were fabricated by pulsed laser deposition method in oxygen ( O 2) atmosphere. The morphology of deposited films was investigated by reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The strong oxygen ambient pressure dependence of film morphology was observed. In high oxygen ambient pressure, the film growth is dominated by island growth mode. The results imply that the experimental conditions of oxygen ambient pressure and substrate temperature are critical for the layer-by-layer growth mode.

Unit cell layer-by-layer heteroepitaxy of BaO thin films at temperatures as low as 20 °C

1997 ◽  
Vol 15 (5) ◽  
pp. 2469-2472 ◽  
Author(s):  
T. Ohnishi ◽  
M. Yoshimoto ◽  
G. H. Lee ◽  
T. Maeda ◽  
H. Koinuma
Keyword(s):  
Thin Films ◽  
Cell Layer ◽  
Unit Cell ◽  
Layer By Layer

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry

2002 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Masato Endoh ◽  
Masatoshi Kurosawa ◽  
Raymond T. Tung ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Layer By Layer ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric
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