Rheed Intensity Oscillation During Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Thin Films

1992 ◽  
Vol 275 ◽  
Author(s):  
K. Yoshikawa ◽  
N. Sasaki
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Growth Interruption ◽  
Layer Deposition ◽  
Unit Cells ◽  
Layered Growth

ABSTRACTUsing in-situ reflection high-energy electron diffraction (RHEED), we studied the growth of Bi-Sr-Ca-Cu-O (BSCCO) thin films prepared by reactive evaporation using layer-by-layer deposition. Bi2Sr2CaCu2Ox(2212) tends to be grown three-dimensionally if it is grown directly on (100) SrTiO3, in contrast to Bi2Sr2CuOx(2201) which is easily grown two-dimensionally on SrTiO3. Two-dimensional 2212 growth can be realized, if a buffer layer of 2201 is deposited on (100) SrTiO3 and growth interruption is utilized after SrO layer deposition. A buffer layer of only two 2201 unit cells improved the surface crystallinity of the substrate for the epitaxial growth of 2212. Growth interruption for two minutes after the 2nd SrO layer in the half unit cell is necessary to keep two-dimensional layered growth. The resulting Tc (zero) is 76 K and Jc (at 4.2 K) is 1.5 × 106 (A/cm2) with these epitaxial films.

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

Oxygen Pressure Dependence of Morphology of Morphology of La2-xSrxCuO4 Ultra-Thin Films

1997 ◽  
Vol 11 (21n22) ◽  
pp. 981-987
Author(s):  
H. Q. Yin ◽  
T. Arakawa ◽  
Y. Kaneda ◽  
T. Yoshikawa ◽  
N. Haneji ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Dependence ◽  
Film Growth ◽  
Ambient Pressure ◽  
High Energy ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Island Growth ◽  
Experimental Conditions

La 2-x Sr x CuO 4 ultra-thin films with thickness 200 Å were fabricated by pulsed laser deposition method in oxygen ( O 2) atmosphere. The morphology of deposited films was investigated by reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The strong oxygen ambient pressure dependence of film morphology was observed. In high oxygen ambient pressure, the film growth is dominated by island growth mode. The results imply that the experimental conditions of oxygen ambient pressure and substrate temperature are critical for the layer-by-layer growth mode.

Ordered Thin Films of Perylenetetracarboxylicdianhydride-bisimide and bis-(N-alkyl)-Quinacridone Dyes

2000 ◽  
Vol 620 ◽  
Author(s):  
Andrew Back ◽  
Dana Alloway ◽  
Derck Schlettwein ◽  
Brook Schilling ◽  
J.-F. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Alkali Halides ◽  
Layer Growth ◽  
Ex Situ ◽  
Layer By Layer ◽  
Molecular Plane ◽  
Layered Growth ◽  
Tapping Mode Afm

ABSTRACTWe review here the recent characterization of vacuum deposited monolayer and multilayer thin films of two different perylenetetracarboxylic-dianydride-bisimides (Cn-PTCDI; n =4,5), quinacridone, and two new bis-(N-alkyl)-quinacridone dyes (DIQA and DEHQA) on single crystal alkali halides using a combination of in situ luminescence spectroscopies and ex situ tapping mode AFM. Flat lying monolayer structures are indicated for PTCDA on the (100) faces of NaCl, KCl and KBr, for C4-PTCDI on KCl, for C5-PTCDI on both KCl and KBr and for DIQA on both KCl and KBr. Coherent thin films, exhibiting layer-by-layer growth can be achieved for PTCDA on all substrates, for C4-PTCDI on KCl and for DIQA on both KBr and KCl. Both C4-PTCDI and DIQA appear to fulfill the requirements for dyes which exhibit layered growth with the molecular plane inclined at steep angles to the surface normal.

scholarly journals Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2605 ◽  
Author(s):  
Becker ◽  
Sierka
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Growth ◽  
Layer By Layer ◽  
Surface Oxygen ◽  
Structure Relaxation ◽  
Layer Deposition ◽  
Deposition Step

Plasma-enhanced atomic layer deposition (PEALD) is a widely used, powerful layer-by-layer coating technology. Here, we present an atomistic simulation scheme for PEALD processes, combining the Monte Carlo deposition algorithm and structure relaxation using molecular dynamics. In contrast to previous implementations, our approach employs a real, atomistic model of the precursor. This allows us to account for steric hindrance and overlap restrictions at the surface corresponding to the real precursor deposition step. In addition, our scheme takes various process parameters into account, employing predefined probabilities for precursor products at each Monte Carlo deposition step. The new simulation protocol was applied to investigate PEALD synthesis of SiO2 thin films using the bis-diethylaminosilane precursor. It revealed that increasing the probability for precursor binding to one surface oxygen atom favors amorphous layer growth, a large number of –OH impurities, and the formation of voids. In contrast, a higher probability for precursor binding to two surface oxygen atoms leads to dense SiO2 film growth and a reduction of –OH impurities. Increasing the probability for the formation of doubly bonded precursor sites is therefore the key factor for the formation of dense SiO2 PEALD thin films with reduced amounts of voids and –OH impurities.

EFFECT OF Bi SURFACTANT IN THE HETEROEPITAXIAL GROWTH OF Co ON Cu SURFACES

2006 ◽  
Vol 13 (02n03) ◽  
pp. 201-207 ◽  
Author(s):  
MASAO KAMIKO ◽  
HIROAKI CHIHAYA ◽  
WATARU SUGIMOTO ◽  
RYOICHI YAMAMOTO ◽  
SANGMUN OH ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Surface Segregation ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
Segregation Effect ◽  
Suitable Amount ◽  
Layered Growth

We have investigated the effect of Bi on the heteroepitaxial growth of Co on Cu by reflection high-energy electron diffraction (RHEED) measurements. It was found that Bi enhanced the layer-by-layer growth of Co on the Cu (111) surfaces at 100°C. The dependence of the growth on Bi layer thickness suggested that there existed a suitable amount of Bi surfactant layer that enhanced smoother layered growth. On the contrary, for the case of Co growth on Cu (100), Bi depressed the layer-by-layer growth of Co on Cu (100). The surface segregation effect of Bi was also studied by Auger electron spectroscopy (AES).

scholarly journals Terahertz Emission Increase in GaAs Films Exhibiting Structural Defects Grown on Si (100) Substrates Using a Two-Layered LTG-GaAs Buffer System

2021 ◽  
Author(s):  
Karl Cedric Gonzales ◽  
Elizabeth Ann Prieto ◽  
Gerald Angelo Catindig ◽  
Alexander De Los Reyes ◽  
Maria Angela Faustino ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
High Energy ◽  
Layer Growth ◽  
Structural Defects ◽  
Buffer System ◽  
Layer By Layer ◽  
Material System ◽  
Reflection And Transmission ◽  
Gaas On Si

Abstract Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures (Ts = 320ºC, 520ºC and 630ºC). The growth method involves the deposition of two low-temperature-grown (LTG)-GaAs buffers with subsequent in-situ thermal annealing at Ts = 600ºC. Reflection high energy electron diffraction confirms the layer-by-layer growth mode of the GaAs on Si. X-ray diffraction shows the improvement in crystallinity as growth temperature is increased. The THz time-domain spectroscopy is performed in reflection and transmission excitation geometries. At Ts = 320ºC, the low crystallinity of GaAs on Si makes it an inferior THz emitter in reflection geometry, over a GaAs grown at the same temperature on a semi-insulating GaAs substrate. However, in transmission geometry, the GaAs on Si exhibits less absorption losses. At higher Ts, the GaAs on Si thin films emerge as promising THz emitters despite the presence of antiphase boundaries and threading dislocations as identified from scanning electron microscopy and Raman spectroscopy. An intense THz emission in reflection and transmission excitation geometries is observed for the GaAs on Si grown at Ts = 520ºC, suggesting the existence of an optimal growth temperature for GaAs on Si at which the THz emission is most efficient in both excitation geometries. The results are significant in the growth design and fabrication of GaAs on Si material system intended for future THz photoconductive antenna emitter devices.

GROWTH, MORPHOLOGICAL AND STRUCTURAL PROPERTIES OF Ag THIN FILMS ON A Ru (0001) SURFACE GROWN BY MBE

2004 ◽  
Vol 11 (06) ◽  
pp. 563-568
Author(s):  
A. AZIZI ◽  
J. ARABSKI ◽  
A. DINIA
Keyword(s):  
Thin Films ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Xrd Analysis ◽  
High Energy ◽  
Growth Direction ◽  
Layer Growth ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Xrd Techniques

Ag thin films deposited on Ru (0001) surface by molecular beam epitaxy, at temperatures of 20°C and 450°C, have been investigated using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. For both growth temperatures, the in situ RHEED patterns of the Ag films exhibited an in-plane six-fold symmetry, indicating that the Ag deposit is in epitaxy with the Ru buffer surface. At RT, the RHEED technique indicated a three-dimensional growth (3D), while a layer-by-layer growth (2D) takes place at HT. The AFM images showed a granular structure of the surface of the deposited Ag layers with a large variation of the roughness with the growth temperature. XRD analysis gave indication of a strongly textured thin film along the growth direction. The lattice mismatch between the Ag and Ru is at the origin of a stress at the interface and defects structure in the film.

Mbe Growth and Thermoelectric Properties OF Bi2Te3 Thin Films

1998 ◽  
Vol 545 ◽  
Author(s):  
Sunglae Cho ◽  
Yunki Kim ◽  
Antonio DiVenere ◽  
George K. L. Wong ◽  
Jerry R. Meyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Antisite Defect ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
X Ray ◽  
Crystal Bulk

AbstractWe have grown high quality Bi2Te3 thin films on CdTe(111)B substrates using MBE. Structural properties have been investigated using in-situ reflection high-energy electron diffraction (RHEED) and θ-2θ X-ray diffraction analysis. They show that Bi2Te3films on CdTe(111) grow along the (00.l) in the hexagonal cell with a layer-by-layer growth mode, resulting in a smooth surface, and an X-ray Bragg peak FWHM of 0.2°. The thermopower and electrical conductivity of the stoichiometric Bi2Te3 films were ∼200 μV/K and 103(Ωcm)−1, respectively, comparable to the single crystal bulk values. We have observed the antisite defect effect in Te-rich Bi2Te3films: excess Te occupies Bi lattice sites and behaves as an n-type dopant. Crystallinity and transport properties are strongly affected by non-stoichiometry.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

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