Formation of TiO2 Nanorings Due to Rapid Thermal Annealing of Swift Heavy Ion Irradiated Films

2008 ◽  
Vol 8 (9) ◽  
pp. 4387-4394 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
I. Sulania ◽  
A. M. Narsale ◽  
D. Kanjilal ◽  
Varsha Bhattacharyya
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Heavy Ion ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Amorphous Thin Films ◽  
Atomic Force ◽  
Swift Heavy Ion ◽  
Glancing Angle ◽  
Spectroscopy Optical

Amorphous thin films of TiO2 deposited by Pulsed Laser Deposition (PLD) method are irradiated by Swift Heavy Ion (SHI) beam. The irradiated films are subsequently annealed by Rapid Thermal Annealing (RTA) method. Atomic Force Microscopy (AFM) study reveals formation of nano-rings on the surface after RTA processing. Phase change is identified by Glancing Angle X-ray Diffraction (GAXRD) and Raman spectroscopy. Optical characterisation is carried out by UV-VIS absorption spectroscopy. Though no shift of absorption edge is observed after irradiation, RTA processing does show redshift.

Optical Properties of Growth Phases Formed by Rapid Thermal Annealing of MoSix thin Films on Si (100)

1991 ◽  
Vol 224 ◽  
Author(s):  
G. Srinivas ◽  
R.S. Rastogi ◽  
V.D. Vankar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
Pronounced Increase ◽  
Amorphous Thin Films ◽  
Glancing Angle ◽  
Stress Variations

AbstractAmorphous thin films were deposited by co-sputtering Mo and Si on Si(100) single crystals. Rapid thermal annealing at 700, 800 and 1050°C for 30 sec. resulted in the growth of hexagonal and tetragonal phases of MoSi2 as revealed by glancing angle x-ray diffraction. The optical properties of these films were studied by spectroscopic ellipsometry in the range 1.0 to 5.0 eV. As deposited films showed both metallic and semiconducting features in the <ε1> and <ε2> spectra. As a result of annealing at 700 and 800°C, pronounced increase in <ε1> was obtained. Annealing at 1050°C resulted in decrease of the values of <ε2>. Surface morphology, density changes and stress variations associated with recrystallization and compound formation are proposed to account for these observations. The peaks in <ε2> spectra are found to be interband transitions in the MoSi2 structures. These results are in confirmity with the EELS and UPS studies and theoretically calculated band structure of MoSi2.

SWIFT HEAVY ION INDUCED NANOHILL FORMATION ON THE SURFACE OF GaP

2011 ◽  
Vol 10 (01n02) ◽  
pp. 105-109 ◽  
Author(s):  
R. L. DUBEY ◽  
S. K. DUBEY ◽  
A. D. YADAV ◽  
D. KANJILAL
Keyword(s):  
Atomic Force Microscopy ◽  
Crystallite Size ◽  
Gallium Phosphide ◽  
Phonon Mode ◽  
Heavy Ion ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Swift Heavy Ion

Gallium phosphide ( GaP ) samples were irradiated with swift (100 MeV)56 Fe 9+ ions for various ion fluences varying from 1 × 1011 to 1 × 1014 cm -2. Atomic force microscopy, Raman scattering, and X-ray diffraction techniques have been used to investigate the irradiation effect. Atomic force microscopy studies showed the presence of nanosized hills separated with valleys at the surface of irradiated gallium phosphide. The average diameters of hills were found to be 19.76, 19.81, 20.70, and 22.64 nm for ion fluences 5 × 1012, 1 × 1013, 5 × 1013, and 1 × 1014 cm -2, respectively. Root mean square surface roughness analysis has been used to characterize the nature of the surface under swift heavy ion irradiation. The features observed in the Raman spectra at 402.18 cm-1 and 365.05 cm-1 were assigned to the characteristic first-order longitudinal optical (LO) phonon mode and transverse optical (TO) phonon mode of gallium phosphide, respectively. We have also observed the second-order overtones and combinations of optical modes giving rise to three characteristic peaks in the region between 700 and 800 cm-1. X-ray diffraction technique has been used to determine the crystallite size. The crystallite size was found to decrease with increase in ion fluence.

Improved Photovoltaic Efficiency of Polymer Photovoltaic Cells by Microwave Irradiation

2010 ◽  
Vol 663-665 ◽  
pp. 819-822
Author(s):  
Boeun Kim ◽  
Kyeong K. Lee ◽  
Sung Koo Lee ◽  
Eun Hee Lim
Keyword(s):  
Thermal Annealing ◽  
Acid Methyl Ester ◽  
Annealing Treatment ◽  
Polymer Chains ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Microwave Annealing ◽  
Photovoltaic Efficiency ◽  
Atomic Force ◽  
Thermal Annealing Treatment

In this study, microwave annealing treatment was introduced into poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61butyric acid methyl ester (PCBM) and poly(9,9‘-dioctylfluorene-cobithiophene (PFT2):PCBM systems instead of thermal annealing treatment. In both systems, microwave annealing showed photovoltaic performane comparable to that of conventional thermal annealing. Through the UV-vis absorption, atomic force microscopy (AFM) and X-ray diffraction (XRD) studies, we were able to confirm that the microwave annealing increases the crystallization of the P3HT polymer chains.

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Influences of thermal annealing and humidity exposure on surface structure of (100) single-crystal MgO substrate

1999 ◽  
Vol 14 (5) ◽  
pp. 2133-2137 ◽  
Author(s):  
M. P. Delplancke-Ogletree ◽  
M. Ye ◽  
R. Winand ◽  
J. F. de Marneffe ◽  
R. Deltour
Keyword(s):  
Surface Structure ◽  
Thermal Annealing ◽  
Substrate Surface ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Evaporation And Condensation ◽  
Atomic Force ◽  
Major Reaction Product ◽  
Major Reaction

We studied the influence of thermal annealing on the surface structure of (100) singlecrystal MgO substrates by atomic force microscopy (AFM). By annealing MgO substrates at various temperatures for 4 h in flowing oxygen, we showed that the surface reconstruction could be explained by considering surface diffusion, surface evaporation, and condensation. At an annealing temperature of 1473 K, a stepped structure was formed with screw dislocations acting as step sources. The influence of humidity on the surface morphology of MgO substrates was also studied by exposing them to a constant humidity of 40 and 80% for different times. After an exposure time of 1.5 h in 80% humidity, the substrate surface was already covered by reaction products. For the 40% humidity, the corresponding time is 10 h. The major reaction product was identified as Mg(OH)2 by x-ray diffraction.

Study of Swift Heavy Ion Irradiation Induced Nanophases of TiO2

2013 ◽  
Vol 24 ◽  
pp. 133-139 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
A. Mahadkar ◽  
Varsha Bhattacharyya
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Non Equilibrium

Ion beam irradiation is a unique non-equilibrium technique for phase formation and material modification. Localized rise in temperature and ultra fast (~1012 s) dissipations of impinging energy make it an attractive tool for nanostructure synthesize. Dense electronic excitation induced spatial and temporal confinement of high energy in a narrow dimension leads the system to a highly non-equilibrium state and the system then relaxes dynamically inducing nucleation of nanocrystals along the latent track. In the present investigation, amorphous thin films of TiO2 are irradiated by 100 MeV Ag ion beam. These irradiated thin films are characterized by Atomic Force Microscopy (AFM), Glancing Angle X-ray Diffraction (GAXRD), Transmission Electron Microscopy (TEM) and UV-VIS absorption spectroscopy. AFM and TEM studies indicate formation of circular nanoparticles of size 10±2 nm in a film irradiated at a fluence of 1×1012 ions.cm-2. Nanophase formation is also inferred from the blueshift observed in UV-VIS absorption band edge.

EFFECT OF THE CdCl2 TREATMENT ON THE MORPHOLOGY AND STRUCTURAL PROPERTIES OF CdTe THIN FILMS DEPOSITED BY THE CSS METHOD

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1681-1685 ◽  
Author(s):  
H. INFANTE ◽  
G. GORDILLO
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Cubic Phase ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sublimation Method ◽  
Cdcl2 Treatment ◽  
Cdte Thin Films

CdTe thin films deposited by the CSS (close spaced sublimation) method, with adequate properties to be used as absorber layer in solar cells, were submitted to a chemical treatment in a saturated CdCl2 solution, followed by thermal annealing in air at 400°C, in order to improve the electronic properties. The effect of chemical and thermal treatments on the morphological and crystallographic properties was studied through atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The studies revealed that the CdTe grows in the cubic phase and that the postdeposition treatments affect the morphology as well as the crystallographic properties; the effect on the morphology is significantly stronger. Increase of the grain size and roughness was observed in samples treated chemically and thermally. On the other hand, no effects were identified on the crystalline structure as induced by the treatments, although recrystallization was observed after thermal annealing.

Synthesis of Nanodimensional TiO2 Thin Films

2008 ◽  
Vol 8 (8) ◽  
pp. 4231-4237 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
T. Mohanty ◽  
J. John ◽  
T. K. Gundu Rao ◽  
Pratap Raychaudhuri ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Anatase Phase ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Glancing Angle ◽  
Photochromic Devices

Nanodimensional TiO2 has wide application in the field of photocatalysis, photovoltaic and photochromic devices. In present investigation TiO2 thin films deposited by pulsed laser deposition method are irradiated by 100 MeV Ag ion beam to achieve growth of nanophases. The nanostructure evolution is characterized by atomic force microscopy (AFM). The phases of TiO2 formed after irradiation are identified by glancing angle X-ray diffraction and Raman spectroscopy. The particle radius estimated by AFM varies from 10–13 nm. Anatase phase of TiO2 is formed after irradiation. The blue shift observed in UV-VIS absorption spectra indicates the nanostructure formation. The shape and size of nanoparticles formed due to high electronic excitation depend upon thickness of the film.

Influence of Rapid Thermal Annealing on Structural, Optical and Electrical Properties of ITO Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 249-252
Author(s):  
Wissawat Sakulsaknimitr ◽  
Worasitti Sriboon ◽  
Kanyakorn Teanchai ◽  
Mati Horprathum ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hall Effect Measurement ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Thin Films

Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction,atomic force microscopy, ultraviolet–visible (UV–vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films.It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.

Effect of Ti Sputtering Current on Structure of TiCrN Thin Films Prepared by Reactive DC Magnetron Co-Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 181-184 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Amphol Teekhaboot
Keyword(s):  
Thin Films ◽  
Crystal Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Lattice Constants ◽  
Atomic Force ◽  
Glancing Angle ◽  
Deposited Films ◽  
Section Analysis

Titanium chromium nitride (TiCrN) thin films were deposited by reactive DC magnetron co-sputtering. The effect of Ti sputtering current (ITi) on the structure of the TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and elemental composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystallite size of less than 40 nm. The crystal size decreased from 39.9 nm to 33.5 nm, while the lattice constants increased from 4.139 Å to 4.162 Å, with increasing of the Ti sputtering current. The film thickness and roughness were found to increase from 397 nm to 615 nm and 3.7 nm to 6.3 nm, respectively, with increasing of the Ti sputtering current. The composition of the as-deposited films varied with the Ti sputtering current. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the Ti sputtering current.

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