Impact of Oxygen during Post-Gate Processing on MOS Device Characteristics

1991 ◽  
Vol 225 ◽  
Author(s):  
Steven S. Lee ◽  
G. Q. Lo ◽  
D. L. Kwong
Keyword(s):  
Leakage Current ◽  
Electric Fields ◽  
Electron Tunneling ◽  
Experimental Results ◽  
Gate Leakage Current ◽  
High Concentration ◽  
Tunneling Barrier ◽  
Mos Capacitors ◽  
Low Field ◽  
Mos Device

ABSTRACTThe effects of post-gate processing in N2+O2 (0˜40%) ambient (e.g., source/drain annealing, BPSG densification and reflow) on the initial MOS characteristics and reliability are discussed in this study. In comparison with processing in pure N2 ambient, it is found that processing in N2+O2-enriched ambient causes a significant, but, transient low-field breakdown of MOS capacitors on both n- and p-wells when electron injection occurs at the poly-gate/SiO2 interface. As a result, the p-channel MOSFETs with high concentration-O2 (˜40%) processing have an excess (i.e., two orders of magnitude) gate leakage current. The experimental results seem to suggest that the annealing in O2-enriched ambient (vs. pure N2 ambient) may induce positive charges near the poly-gate/SiO2 interface which reduce the electron tunneling barrier. Our results also suggest that the induced positive-charges are annihilated immediately upon the application of electric fields.

Transport and fluctuations in nonlinear-dissipative systems: role of interparticle collisions

1999 ◽  
Vol 4 ◽  
pp. 31-86 ◽  
Author(s):  
R. Katilius ◽  
A. Matulionis ◽  
R. Raguotis ◽  
I. Matulionienė
Keyword(s):  
Electric Fields ◽  
Carrier Density ◽  
Experimental Results ◽  
Dissipative Systems ◽  
Doped Semiconductors ◽  
Electron Diffusion ◽  
Electron Collisions ◽  
Electric Noise ◽  
Diffusion Phenomena

The goal of the paper is to overview contemporary theoretical and experimental research of the microwave electric noise and fluctuations of hot carriers in semiconductors, revealing sensitivity of the noise spectra to non-linearity in the applied electric field strength and, especially, in the carrier density. During the last years, investigation of electronic noise and electron diffusion phenomena in doped semiconductors was in a rapid progress. By combining analytic and Monte Carlo methods as well as the available experimental results on noise, it became possible to obtain the electron diffusion coefficients in the range of electric fields where inter-electron collisions are important and Price’s relation is not necessarily valid. Correspondingly, a special attention to the role of inter-electron collisions and of the non-linearity in the carrier density while shaping electric noise and diffusion phenomena in the non-equilibrium states will be paid. The basic and up-to-date information will be presented on methods and advances in this contemporary field - the field in which methods of non-linear analytic and computational analysis are indispensable while seeking coherent understanding and interpretation of experimental results.

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

Enhancing the Thermoelectric Properties in Carbon Fiber/Cement Composites by Using Steel Slag

2013 ◽  
Vol 539 ◽  
pp. 103-107 ◽  
Author(s):  
Jun Qing Zuo ◽  
Wu Yao ◽  
Jun Jie Qin
Keyword(s):  
Carbon Fiber ◽  
Linear Relationship ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Steel Slag ◽  
Experimental Results ◽  
Cement Composites ◽  
Temperature Differential ◽  
High Concentration ◽  
Good Linear

Thermoelectric properties of steel slag-carbon fiber/cement composites were studied in this paper. The effect of steel slag content on thermoelectric properties was focused on especially. The experimental results show that the addition of steel slag leads to an increase in the positive thermoelectric power of the cabon fiber/cement composites. The highest absolute thermoelectric power of carbon fiber/cement composites was rendered as positive as 14.4µV/°C by using steel slag, which had a high concentration of holes. Beside, a good linear relationship was observed between thermoelectric power and temperature differential on the specimen.

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