Beam-Recrystallized Device-Worthy Films of Si on SiO2 via Control of the Grain Boundary Location

1983 ◽  
Vol 23 ◽  
Author(s):  
J.P. Colinge ◽  
D. Bensahel ◽  
M. Alamome ◽  
M. Haond ◽  
C. Leguet
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Laser Annealing ◽  
Ring Oscillators ◽  
Large Area ◽  
Leakage Currents ◽  
Back Gate ◽  
Boundary Location

ABSTRACTDevice-worthy films of silicon on SiO2 have been produced using laser annealing and antireflection stripes. If no seeding is used, grain boundaries will be localized beneath the stripes; with seeding, large-area single crystals can be grown, of uniform <100> orientation. N-channel transistors show a mobility of 620 cm2/V.s and present leakage currents which can be reduced, however, down to a few pA/um when the substrate (back gate) is negatively biased to − 5 V. Ring oscillators have also been made, which oscillate with a delay per stage of 1 nsec.

X-Ray Reflectivity Study of Single- and Bicrystals of Gold

1990 ◽  
Vol 208 ◽  
Author(s):  
M. R. Fitzsimmons ◽  
E. Burkel ◽  
J. Peisl
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Diffuse Scattering ◽  
Direct Evidence ◽  
X Ray ◽  
Specular Reflectivity ◽  
Boundary Measurements

ABSTRACTX-ray reflectivity techniques have been used to characterize the surfaces of 0.4µm thick Au films epitaxially grown on single-crystals of NaCl. Measurements of both the specular and non-specular reflectivity suggest that the Au surface is very rough. The nonspecular reflectivity provides valuable information about the correlation of the heights at different points on the surface. The first in situ reflectivity study of the formation and destruction of a grain boundary shows direct evidence for the existence of diffuse scattering from the grain boundary. Measurements of several [0011 twist grain boundaries suggest that the roughness and texture of an interface depends upon the geometrical orientation of the surrounding substrates.

Properties of Iron Atoms at Grain Boundaries in Fe and Fe72Al28

1998 ◽  
Vol 527 ◽  
Author(s):  
O. Schneeweiss ◽  
I. Turek ◽  
J. Čermák ◽  
P. Lejček
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
First Principles ◽  
Magnetic Moments ◽  
Emission Mössbauer Spectroscopy ◽  
First Principles Calculations ◽  
Hyperfine Parameters ◽  
Impurity Atoms ◽  
Atomic Spacing

ABSTRACTLocation of diffused 57Co atoms in single crystals, bicrystals and polycrystals of pure iron and Fe72Al28alloy were investigated by means of emission Mössbauer spectroscopy. To interpret the results, first principles calculations of iron atom magnetic moments and hyper-fine field were carried out. From comparison of M6ssbauer spectra of single crystals with those of bicrystals and polycrystals, an information about grain boundary positions occupied by diffusing atoms is obtained. It is shown that about 5% of the diffusing atoms at the {112} grain boundary of iron are located at the positions either having impurity atoms in the nearest neighbourhood or characterized by larger atomic spacing in comparison with the bulk. In the Fe72Al28 a dominating portion of diffusing atoms have different surrounding than in grain volume. An enrichment of grain boundaries by aluminum could explain their hyperfine parameters.

Influence of Grain Boundary Mobility on Microstructure Evolution during Recrystallisation

2012 ◽  
Vol 715-716 ◽  
pp. 191-196
Author(s):  
Myrjam Winning ◽  
Dierk Raabe
Keyword(s):  
Grain Boundary ◽  
Cellular Automaton ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Microstructure Evolution ◽  
Texture Evolution ◽  
Three Dimensional ◽  
Boundary Mobility ◽  
Metallic Materials ◽  
Grain Boundary Mobility

The paper introduces first investigations on how low angle grain boundaries can influence the recrystallisation behaviour of crystalline metallic materials. For this purpose a three-dimensional cellular automaton model was used. The approach in this study is to allow even low angle grain boundaries to move during recrystallisation. The effect of this non-zero mobility of low angle grain boundaries will be analysed for the recrystallisation of deformed Al single crystals with Cube orientation. It will be shown that low angle grain boundaries indeed influence the kinetics as well as the texture evolution of metallic materials during recrystallisation.

scholarly journals Effects of Grain Boundary Constraint on the Constitutive Response of Tantalum Bicrystals

2003 ◽  
Vol 779 ◽  
Author(s):  
A. Ziegler ◽  
G. H. Campbell ◽  
M. Kumar ◽  
J. S. Stölken
Keyword(s):  
Grain Boundary ◽  
Single Crystals ◽  
Boundary Region ◽  
Twist Boundary ◽  
Compression Tests ◽  
Large Area ◽  
Crystal Rotation ◽  
Boundary Constraint ◽  
Free Region ◽  
Constitutive Response

AbstractThe role of grain boundary constraint in strain localization, slip system activation, slip transmission, and the concomitant constitutive response was examined performing a series of uniaxial compression tests on tantalum bicrystals. Tantalum single crystals were diffusion bonded to form a (011) twist boundary and compressed along the [011] direction. The resulting threedimensional deformation was analyzed via volume reconstruction. With this technique, both the effective states of stress and strain over the cross-sectional area could be measured as a function of distance from the twist boundary, revealing a highly constrained grain boundary region. Post-test metallurgical characterization was performed using Electron Back-Scattered-Diffraction (EBSD) maps. The results, a spatial distribution of slip patterning and mapping of crystal rotation around the twist-boundary, were analyzed and compared to the known behavior of the individual single crystals. A rather large area near the grain boundary revealed no crystal rotation. Instead, patterns of alternating crystal rotation similar to single crystal experiments were found to be some distance away (~1mm) from the immediate grain boundary region, indicating the large length scale of the rotation free region.

Grain Boundary and Misorientation Angle Dependent Thermal Transport in Single-layer MoS2

Nanoscale ◽  
2022 ◽  
Author(s):  
Ke Xu ◽  
Ting Liang ◽  
Zhisen Zhang ◽  
Xuezheng Cao ◽  
Meng Han ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Misorientation Angle ◽  
Thermal Transport ◽  
Single Layer ◽  
Large Area ◽  
Grain Misorientation

Grain boundaries (GBs) are inevitable defects in large-area MoS2 samples but play a key role in their properties, however, the influence of grain misorientation on thermal transport remains largely unknown...

scholarly journals The Internal Friction of Single Crystals, Bicrystals and Polycrystals of Pure Magnesium

2015 ◽  
Vol 60 (1) ◽  
pp. 371-375 ◽  
Author(s):  
W.B. Jiang ◽  
Q.P. Kong ◽  
L.B. Magalas ◽  
Q.F. Fang
Keyword(s):  
Activation Energy ◽  
Internal Friction ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Room Temperature ◽  
Internal Friction Peak ◽  
Self Diffusion ◽  
Boundary Relaxation ◽  
The Difference

Abstract The internal friction of magnesium single crystals, bicrystals and polycrystals has been studied between room temperature and 450°C. There is no internal friction peak in the single crystals, but a prominent relaxation peak appears at around 160°C in polycrystals. The activation energy of the peak is 1.0 eV, which is consistent with the grain boundary self-diffusion energy of Mg. Therefore, the peak in polycrystals can be attributed to grain boundary relaxation. For the three studied bicrystals, the grain boundary peak temperatures and activation energies are higher than that of polycrystals, while the peak heights are much lower. The difference between the internal friction peaks in bicrystals and polycrystals is possibly caused by the difference in the concentrations of segregated impurities in grain boundaries.

Poly-Si Thin Film Transistors Fabricated By Employing Selective Si Ion-Implantation And Excimer Laser Annealing

2000 ◽  
Vol 609 ◽  
Author(s):  
Min-Cheol Lee ◽  
Jae-Hong Jeon ◽  
Jin-Woo Park ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Mask Pattern ◽  
Excimer Laser Annealing ◽  
Boundary Location ◽  
Si Ion Implantation ◽  
Annealing Method

ABSTRACTA new excimer laser annealing method is proposed in order to produce the poly-Si film with low defect density and large grain, by combining the selective Si ionimplantation and excimer laser annealing. Selective Si ion-implantation is employed to form artificial nucleation seeds in a-Si film prior to excimer laser annealing in order to increase the nucleation probability. The grain boundary location in poly-Si film has been controlled through implantation mask, and the grain size around micrometer order is obtained without any other process. TEM result shows that grain boundary is controlled according to mask pattern and the crystallinity of the poly-Si film is improved.

Magnetically Driven Selective Grain Growth in Locally Deformed Zn Single Crystals

2004 ◽  
Vol 467-470 ◽  
pp. 763-770 ◽  
Author(s):  
P.J. Konijnenberg ◽  
Dmitri A. Molodov ◽  
Günter Gottstein
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Grain Growth ◽  
Driving Force ◽  
Grain Orientation ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Single Temperature ◽  
Individual Grains

In magnetically anisotropic materials a driving force for grain boundary migration can be induced by an external magnetic ¯eld. It is experimentally shown that annealing of locally deformed Zn single crystals in a suitably directed high magnetic ¯eld results in a growth of new individual grains. Velocities of some solitary moving grain boundaries were measured and their absolute mobilities were estimated at a single temperature. Results are discussed in terms of preferential grain orientation and boundary character.

Vertex Dynamics Simulations of Orientation Dependent Recovery in Deformed Aluminium Single Crystals

2011 ◽  
Vol 702-703 ◽  
pp. 639-642
Author(s):  
Adhish Majumdar ◽  
Claire Maurice ◽  
Julian H. Driver
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Dynamics Simulation ◽  
Boundary Misorientation ◽  
Annealing Behaviour ◽  
The Common ◽  
Dynamics Simulations ◽  
Orientation Dependency ◽  
Good Agreement

A 2-dimensional vertex dynamics simulation is applied to the annealing behaviour of deformed Aluminium single crystals having different orientations. It is observed in experiments that deformed single crystals of different orientations - typically the common rolling textures like Goss (110)[001], Brass (110)[1-12], Cube (001)[100] – exhibit remarkably different rates of recovery. It is suggested that this difference arises from the deformation microstructures, with sub-grain boundaries of various misorientation values. The sub-grain boundary mobilities and energies, being strong functions of the boundary misorientation, thus affect the recovery rates. This effect is illustrated using vertex dynamics simulation on the same orientations and schematic deformation substructures as above. Good agreement is obtained for the orientation dependency of recovery.

scholarly journals Scattering Theory of Graphene Grain Boundaries

2018 ◽  
Author(s):  
Francesco Romeo ◽  
Antonio Di Bartolomeo
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Scattering Theory ◽  
Chemical Vapor ◽  
Transmission Probability ◽  
Industrial Applications ◽  
Large Area ◽  
Current Conservation ◽  
Long Wavelength ◽  
Boundary Properties

The implementation of graphene-based electronics requires fabrication processes able to cover large device areas since exfoliation method is not compatible with industrial applications. Chemical vapor deposition of large-area graphene represents a suitable solution having the important drawback of producing polycrystalline graphene with formation of grain boundaries, which are responsible for limitation of the device performance. With these motivations, we formulate a theoretical model of graphene grain boundary by generalizing the graphene Dirac Hamiltonian model. The model only includes the long-wavelength regime of the particle transport, which provides the main contribution to the device conductance. Using symmetry-based arguments deduced from the current conservation law, we derive unconventional boundary conditions characterizing the grain boundary physics and analyze their implications on the transport properties of the system. Angle resolved quantities, such as the transmission probability, are studied within the scattering matrix approach. The conditions for the existence of preferential transmission directions are studied in relation with the grain boundary properties. The proposed theory provides a phenomenological model to study grain boundary physics within the scattering approach and represents per se an important enrichment of the scattering theory of graphene. Moreover, the outcomes of the theory can contribute in understanding and limiting detrimental effects of graphene grain boundaries also providing a benchmark for more elaborated techniques.

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