Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Coffa ◽  
A. Battaglia ◽  
F. Priolo
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
Ion Beam ◽  
Defect Structures ◽  
Transmission Electron ◽  
Defect Accumulation ◽  
Amorphous Si ◽  
Transient Spectroscopy

ABSTRACTThe mechanisms of defect accumulation and dynamic annealing in ion-implanted crystalline and amorphous Si are elucidated by performing conductivity and Raman spec-trascopy measurements in-situ during ion irradiation. In amorphous Si the entire gamut of defect structures has been characterized by analyzing the annealing kinetics from 77 K to ~ 800 K both during and after irradiation. Moreover the modifications in the electronic properties of crystalline Si produced by ion-irradiation have been investigated. The use of in-situ techniques in combination with transmission electron microscopy and deep-level transient spectroscopy allowed us to demonstrate the correlation between structural and electrical defects produced by ion-irradiation in Si.

Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation

2008 ◽  
Vol 79 (5) ◽  
pp. 056103 ◽  
Author(s):  
Sandeep Kumar ◽  
Sugam Kumar ◽  
Y. S. Katharria ◽  
C. P. Safvan ◽  
D. Kanjilal
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Transient Spectroscopy

Ion-beam induced disordering and onset of amorphization in spinel by defect accumulation

1995 ◽  
Vol 10 (4) ◽  
pp. 981-985 ◽  
Author(s):  
N. Bordes ◽  
L.M. Wang ◽  
R.C. Ewing ◽  
K.E. Sickafus
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Crystalline Material ◽  
High Dose ◽  
Transmission Electron ◽  
Defect Accumulation ◽  
Radiation Resistant ◽  
Crystalline Domains ◽  
Resistant Ceramic

Ion-irradiation induces amorphization in many intermetallics and ceramics, but spinel (MgAl2O4) is considered a “radiation resistant” ceramic. Spinel was irradiated with 1.5 MeV Kr+ at 20 K and observed in situ by transmission electron microscopy (TEM). The spinel remained crystalline to a high dose of 1 × 1016 ions/cm2, without any evidence of amorphization. Another spinel was preimplanted with Ne (400 keV and 50 keV). The microstructure revealed a still crystalline material with 8 nm interstitial loops. After irradiation with 1.5 MeV Kr+ (20 K), amorphization, a result of cation disordering, initiated at a dose of 1.7 × 1015 ions/cm2. At a dose of 1 × 1016 ions/cm2, the spinel was partially amorphous and the remaining crystalline domains disordered. These results show that spinel can be disordered and that amorphization can be triggered by the introduction of stable defects, followed by ion irradiation at low temperature.

Defects in High Energy Ion Irradiated 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 397-400 ◽  
Author(s):  
Gaetano Izzo ◽  
Grazia Litrico ◽  
Andrea Severino ◽  
Gaetano Foti ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
High Energy ◽  
Conduction Band Edge ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Fluence Range

The defects produced by 7.0 MeV C+ irradiation in 4H-SiC epitaxial layer were followed by Deep Level Transient Spectroscopy, current-voltage measurements and Transmission Electron Microscopy in a large fluence range (109-51013 ions/cm2). At low fluence (109 -1010 ions/cm2), the formation of three main level defects located at 0.68 eV, 0.98 eV and 1.4 eV below the conduction band edge is detected. The trap concentration increases with ion fluence suggesting that these levels are associated to the point defects generated by ion irradiation. In this fluence range the leakage current of the diodes does not change. At higher fluence an evolution of defects occurs, as the concentration of traps at 0.68 eV and 1.4 eV decreases, while the intensity of the level at 0.98 eV remains constant. In this fluence range complex defects are formed and an increase of a factor five in the leakage current is measured.

In Situ Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes

2020 ◽  
Vol 67 (9) ◽  
pp. 2051-2061
Author(s):  
George T. Nelson ◽  
Gildas Ouin ◽  
Stephen J. Polly ◽  
Kevin B. Wynne ◽  
Arthur W. Haberl ◽  
...  
Keyword(s):  
Dark Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

1998 ◽  
Vol 532 ◽  
Author(s):  
C. R. Cho ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
N. Yarykin ◽  
G. Rozgonyi ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Temperature Range ◽  
Type Silicon ◽  
Defect Annealing ◽  
Interstitial Defects ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTThe evolution of defects in Czochralski and epitaxial p- and n-type silicon wafers following irradiation with He. Si or Ge ions at 80 K has been investigated by in situ deep level transient spectroscopy (DLTS). Defect annealing and formation reactions have been observed over the temperature range 80–350 K. In p-type silicon, new species-dependent levels are observed immediately after implantation, but these levels anneal out at or below room temperature. The wellknown divacancy and interstitial defects, usually reported after room temperature implantation, are revealed in the DLTS spectra only upon annealing at 160–200 K. In n-type silicon, vacancy-oxygen pairs are observed immediately after implantation. However, vacancy-related defects continue to form over a broad temperature range in samples implanted with Si or Ge. These observations are consistent with a model whereby vacancies and interstitials are released from defect clusters at temperatures >200 K to form divacancies and other defect pairs which are stable at room temperature.

The Influence of an In-Situ Electric Field on H+ and He+ Implantation Induced Defects in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
S. Koveshnikov ◽  
G.A. Rozgonyi ◽  
C.W. White
Keyword(s):  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Technique ◽  
Deep Traps ◽  
Observed Behaviour ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTThe influence of in-situ electronic perturbations on defect generation during 150 keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He+ implantation was also performed to supplement the above studies and to differentiate any passivation effects due to hydrogen. A model based on the charge states of hydrogen and vacancies was used to explain the observed behaviour.

Characterisation of the Subthreshold Damage in MeV Ion Implanted p Si

1998 ◽  
Vol 510 ◽  
Author(s):  
Shabih Fatima ◽  
Jennifer Wong-Leung ◽  
John Fitz Gerald ◽  
C. Jagadish
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Damage Evolution ◽  
Peak Concentration ◽  
Deep Level ◽  
Extended Defects ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

AbstractSubthreshold damage in p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si is implanted with Si, Ge and Sn with energies in the range of 4 to 8.5 MeV, doses from 7 × 1012to 1×1014cm−2and all annealed at 800°C for 15 min. For each implanted specie, DLTS spectra show a transition dose called threshold dose above which point defects transform in to extended defects. DLTS measurements have shown for the doses below threshold, a sharp peak, corresponding to the signature of point defects and for doses above threshold a broad peak indicating the presence of extended defects. This is found to be consistent with TEM analyses where no defects are seen for the doses below threshold and the presence of extended defects for the doses above threshold. This suggests a defect transformation regime where point defects present below threshold are acting like nucleating sites for the extended defects. Also the mass dependence on the damage evolution has been observed, where rod-like defects are observed in the case of Si and (rod-like defects and loops) for Ge and Sn despite the fact that peak concentration of vacancies for Ge and Sn are normalized to the peak number of vacancies for Si.

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