Demonstrating the Utility of Boron Based Precursor Molecules for Selective Area DepositIon in a Scanning Tunnelling Microscope

1991 ◽  
Vol 236 ◽  
Author(s):  
F. Keith Perkins ◽  
M. Onellion ◽  
Sunwoo Lee ◽  
P.A. Dowben
Keyword(s):  
Main Group ◽  
Cluster Compounds ◽  
Scanning Tunnelling Microscope ◽  
Selective Area ◽  
Scanning Tunnelling ◽  
Spatial Dimensions ◽  
Gaseous Precursor ◽  
Precursor Molecules ◽  
Area Deposition

AbstractThe scanning tunnelling microscope (STM) can be used to selectively deposit material from a gaseous precursor compound. Ultrasmall (less than a 100 nm across) spatial dimensions for selective area deposition may be achieved by this means. In this paper we outline a scheme forselecting and designing main group cluster compounds and organometallics for this type of selective area deposition using nido-decaborane(14) as an example.

An improved design for an Scanning Tunnelling Microscope (STM) for use in a Transmission Electron Microscope (TEM)

1991 ◽  
Vol 49 ◽  
pp. 384-385
Author(s):  
W.K. Lo ◽  
J.C.H. Spence
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Mechanical Stability ◽  
Scanning Tunnelling Microscope ◽  
Reflection Mode ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Scanning Tunnelling ◽  
Improved Design

An improved design for a combination Scanning Tunnelling Microscope/TEM specimen holder is presented. It is based on earlier versions which have been used to test the usefulness of such a device. As with the earlier versions, this holder is meant to replace the standard double-tilt specimen holder of an unmodified Philips 400T TEM. It allows the sample to be imaged simultaneously by both the STM and the TEM when the TEM is operated in the reflection mode (see figure 1).The resolution of a STM is determined by its tip radii as well as its stability. This places strict limitations on the mechanical stability of the tip with respect to the sample. In this STM the piezoelectric tube scanner is rigidly mounted inside the endcap of the STM holder. The tip coarse approach to the sample (z-direction) is provided by an Inchworm which is located outside the TEM vacuum.

On-Surface Radical Oligomerisation: A New Approach to STM Tip-Induced Reactions

2018 ◽  
Author(s):  
Gaolei Zhan ◽  
Younes Makoudi ◽  
Judicael Jeannoutot ◽  
Simon Lamare ◽  
Michel Féron ◽  
...  
Keyword(s):  
Sample Surface ◽  
Scanning Tunnelling Microscope ◽  
Transfer Event ◽  
New Approach ◽  
The Past ◽  
Organic Nanostructures ◽  
Scanning Tunnelling ◽  
New Strategy ◽  
Surface Fabrication ◽  
And Control

Over the past decade, on-surface fabrication of organic nanostructures has been widely investigated for the development of molecular electronic devices, nanomachines, and new materials. Here, we introduce a new strategy to obtain alkyl oligomers in a controlled manner using on-surface radical oligomerisations that are triggered by the electrons/holes between the sample surface and the tip of a scanning tunnelling microscope. The resulting radical-mediated mechanism is substantiated by a detailed theoretical study. This electron transfer event only occurs when <i>V</i><sub>s</sub> < -3 V or <i>V</i><sub>s</sub> > + 3 V and allows access to reactive radical species under exceptionally mild conditions. This transfer can effectively ‘switch on’ a sequence leading to formation of oligomers of defined size distribution due to the on-surface confinement of reactive species. Our approach enables new ways to initiate and control radical oligomerisations with tunnelling electrons, leading to molecularly precise nanofabrication.

Single-charge transport through hybrid core–shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Transport ◽  
Comprehensive Analysis ◽  
Energy Structure ◽  
Core Shell ◽  
Single Charge ◽  
Scanning Tunnelling Microscope ◽  
Single Carrier ◽  
Scanning Tunnelling

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
Y. Lansari ◽  
J.W. Han ◽  
S. Hwang ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Epitaxial Films ◽  
Semiconductor Surface ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Surface Areas ◽  
Selective Area ◽  
Lift Off ◽  
P Type ◽  
Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

Laser-Induced Selective Copper Deposition on Polyimides and Semiconductors

1992 ◽  
Vol 282 ◽  
Author(s):  
Seong-Don Hwang ◽  
S. S. Kher ◽  
J. T. Spencer ◽  
P. A. Dowben
Keyword(s):  
Gas Phase ◽  
Copper Chloride ◽  
Copper Deposition ◽  
Copper Films ◽  
Liquid Phase Deposition ◽  
Metal Thin Films ◽  
Selective Area ◽  
Phase Cluster ◽  
Photolytic Decomposition ◽  
Area Deposition

ABSTRACTIt has been demonstrated that copper can be selectively deposited on a variety of substrates including Teflon (polytetrafluroethylene or PTFE), Kapton (polyimide resin), silicon and gallium arsnide from solution by photo-assisted initiated deposition. A copper containing solution was prepared from a mixture of copper(I) chloride (Cu2Ci2) and decaborane (B10H14) in diethyl ether and/or THF (tetrahydrofuran). The copper films were fabricated by ultraviolet photolytic decomposition of copper chloride and polyhedral borane clusters. This liquid phase deposition has a gas-phase cluster analog that also results in copper deposition via pyrolysis. The approach of depositing metal thin films selectively by pholysis from solution is a novel and an underutilized approach to selective area deposition.

Excitation of propagating surface plasmons with a scanning tunnelling microscope

2011 ◽  
Vol 22 (17) ◽  
pp. 175201 ◽  
Author(s):  
T Wang ◽  
E Boer-Duchemin ◽  
Y Zhang ◽  
G Comtet ◽  
G Dujardin
Keyword(s):  
Surface Plasmons ◽  
Scanning Tunnelling Microscope ◽  
Scanning Tunnelling

A Revised Philosophy of Surface Measuring Systems

1988 ◽  
Vol 202 (3) ◽  
pp. 169-185 ◽  
Author(s):  
D J Whitehouse
Keyword(s):  
Measuring Instruments ◽  
Scanning Tunnelling Microscope ◽  
Measuring Systems ◽  
Scanning Tunnelling ◽  
Measuring Force

Surfaces have been measured for many years yet there are still many factors which have not been optimized both for the contacting methods and non-contacting methods. In this paper the philosophy of optimization for both types of system is examined and rules established for improvement of system fidelity. In particular, ways are suggested of increasing the speed of measurement. This new philosophy has implications when consideration is being given to improving the performance of the modern generation of surface measuring instruments. These include not only those measuring geometry such as the scanning tunnelling microscope but also devices for measuring force and friction.

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