Change Of SI(111) Surface Reconstruction Under Noble Metal Films

ABSTRACTInterface structures between Si(111) and thick noble metal overlayers are studied by grazing-angle-incidence x-ray diffraction and crystal truncation rods. The 7×7 reconstruction is only preserved under a Ag film deposited at room temperature. This capped 7×7 structure changed to a 1×1 structure upon annealing over 250°C. A thick overlayer of room temperature deposited Au film destroyed the 7×7 reconstruction and changed the interface structure to 1×1. Our results are compared to a thick Cu/Si(111) interface structure1.

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The Effect of Pb on the Interface Structure of Fe/Cr(100) Metallic Multilayers

MRS Proceedings ◽

10.1557/proc-648-p3.35 ◽

2000 ◽

Vol 648 ◽

Author(s):

Kyu-Young Kim ◽

Masao Kamiko ◽

Sang-Mun Oh ◽

Guang-Hong Lu ◽

Ryoichi Yamamoto

Keyword(s):

Magnetic Field ◽

High Resolution ◽

Interface Structure ◽

Metallic Multilayers ◽

X Ray Diffraction ◽

X Ray ◽

Diffraction Patterns ◽

Interface Structures

AbstractWe investigated the differences in the interface structures and magnetotransport properties between surfactant-mediated multilayers and normal ones. From the observations of RHEED and High-Resolution X-ray diffraction patterns, we confirmed that the surfaces of Fe/Cr(100) multilayers with Pb are flatter and the interfaces are sharper than one without Pb, which means that Pb operates as an effective surfactant. The magnetoresistance(MR) ratio of the multilayers prepared with Pb was larger than that of the multilayers prepared without Pb. The change of resistance with magnetic field was larger for the multilayers with a surfactant.

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On the Epitaxy of Metal Films on GaN

MRS Proceedings ◽

10.1557/proc-449-1079 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 3

Author(s):

Q.Z. Liu ◽

K.V. Smith ◽

E.T. Yu ◽

S.S. Lau ◽

N.R. Perkins ◽

...

Keyword(s):

Room Temperature ◽

Lattice Mismatch ◽

Metal Films ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Ion Channeling ◽

Sapphire Substrates ◽

Atomic Force ◽

Determining Factor

ABSTRACTA variety of metal films deposited at room temperature have been found to grow epitaxially under conventional vacuum conditions on GaN grown by metalorganic vapor phase epitaxy on sapphire substrates. The metal films have been characterized by X-ray diffraction using a thin-film Read camera and by MeV ion channeling measurements. Lattice mismatch between the epitaxial metals and the GaN basal planes ranges from ∼ 0.2% to ∼ 22%, and does not appear to be the determining factor in the epitaxy reported here. Surface structure of the epitaxial metal films has been studied by atomic force microscopy and found to differ considerably from that of nonepitaxial metal films grown on similar GaN substrates.

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Implications of Interface Structure on the Elastic Properties of Metallic Multilayers-The Case of the Supermodulus Effect

MRS Proceedings ◽

10.1557/proc-229-53 ◽

1991 ◽

Vol 229 ◽

Cited By ~ 2

Author(s):

Alan F. Jankowski

Keyword(s):

Electron Microscopy ◽

Elastic Properties ◽

High Resolution Electron Microscopy ◽

Interface Structure ◽

Metal Films ◽

Metallic Multilayers ◽

X Ray Diffraction ◽

X Ray ◽

Resolution Electron ◽

Detailed Nature

AbstractThe existence of the supermodulus effect, an enhancement in the elastic modulus of artificially layered metal films, was discovered more than a dozen years ago. Yet the detailed nature of this effect remains a puzzling phenomena. Implications of the interface structure on the elastic properties of gold-nickel multilayers are investigated using x-ray diffraction and high resolution electron microscopy.

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Electron Microscopy of Human Gallstones

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100065523 ◽

1971 ◽

Vol 29 ◽

pp. 296-297

Author(s):

C. Wolpers ◽

R. Blaschke

Keyword(s):

Electron Microscopy ◽

Room Temperature ◽

Bile Pigment ◽

X Ray Diffraction ◽

Triclinic Crystal System ◽

X Ray ◽

Follow Up Study ◽

Infra Red ◽

Main Components

Scanning microscopy was used to study the surface of human gallstones and the surface of fractures. The specimens were obtained by operation, washed with water, dried at room temperature and shadowcasted with carbon and aluminum. Most of the specimens belong to patients from a series of X-ray follow-up study, examined during the last twenty years. So it was possible to evaluate approximately the age of these gallstones and to get information on the intensity of growing and solving.Cholesterol, a group of bile pigment substances and different salts of calcium, are the main components of human gallstones. By X-ray diffraction technique, infra-red spectroscopy and by chemical analysis it was demonstrated that all three components can be found in any gallstone. In the presence of water cholesterol crystallizes in pane-like plates of the triclinic crystal system.

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Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173996 ◽

1990 ◽

Vol 48 (4) ◽

pp. 172-173

Author(s):

Naoki Yamamoto ◽

Makoto Kikuchi ◽

Tooru Atake ◽

Akihiro Hamano ◽

Yasutoshi Saito

Keyword(s):

Phase Transition ◽

Electron Microscope Study ◽

Room Temperature ◽

Hexagonal Lattice ◽

Ferroelectric Materials ◽

Temperature Phase ◽

X Ray Diffraction ◽

X Ray ◽

Periodic Arrays ◽

Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

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Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

MRS Proceedings ◽

10.1557/proc-780-y5.5 ◽

2003 ◽

Vol 780 ◽

Author(s):

C. Essary ◽

V. Craciun ◽

J. M. Howard ◽

R. K. Singh

Keyword(s):

Uv Radiation ◽

Photoelectron Spectroscopy ◽

Grazing Angle ◽

X Ray Diffraction ◽

Metal Thin Films ◽

X Ray ◽

Force Microscopy ◽

Si Substrates ◽

Atomic Force ◽

Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

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Xenon Trioxide Adducts of O-Donor Ligands; [(CH3)2CO]3XeO3, [(CH3)2SO]3(XeO3)2, (C5H5NO)3(XeO3)2, and [(C6H5)3PO]2XeO3

10.26434/chemrxiv.7092263.v1 ◽

2018 ◽

Author(s):

Katherine Marczenko ◽

James Goettel ◽

Gary Schrobilgen

Keyword(s):

Room Temperature ◽

Triphenylphosphine Oxide ◽

Donor Ligands ◽

Mechanical Shock ◽

X Ray Diffraction ◽

X Ray ◽

Oxygen Coordination ◽

Xenon Trioxide ◽

Distorted Octahedra ◽

Coordination Spheres

Oxygen coordination to the Xe(VI) atom of XeO3 was observed in its adducts with triphenylphosphine oxide, dimethylsulfoxide, pyridine-N-oxide, and acetone. The crystalline adducts were characterized by low-temperature, single-crystal X-ray diffraction and Raman spectroscopy. Unlike solid XeO3, which detonates when mechanically or thermally shocked, the solid [(C6H5)3PO]2XeO3, [(CH3)2SO]3(XeO3)2, and (C5H5NO)3(XeO3)2 adducts are insensitive to mechanical shock, but undergo rapid deflagration when ignited by a flame. Both [(C6H5)3PO]2XeO3 and (C5H5NO)3(XeO3)2 are air-stable whereas [(CH3)2SO]3(XeO3)2 slowly decomposes over several days and [(CH3)2CO]3XeO3 undergoes adduct dissociation at room temperature. The xenon coordination sphere of [(C6H5)3PO]2XeO3 is a distorted square pyramid which provides the first example of a five-coordinate XeO3 adduct. The xenon coordination spheres of the remaining adducts are distorted octahedra comprised of three Xe---O secondary contacts that are approximately trans to the primary Xe–O bonds of XeO3. Quantum-chemical calculations were used to assess the Xe---O adduct bonds, which are predominantly electrostatic σ-hole bonds between the nucleophilic oxygen atoms of the bases and the σ-holes of the xenon atoms.

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Effect of trytophan as dopant on potassium acid phthalate single crystals

10.31221/osf.io/cn28k ◽

2019 ◽

Author(s):

Chem Int

Keyword(s):

Single Crystals ◽

Room Temperature ◽

Visible Region ◽

X Ray Diffraction ◽

X Ray ◽

Slow Evaporation Technique ◽

Absorption Studies ◽

Evaporation Technique ◽

Potassium Acid Phthalate ◽

Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

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Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽

10.3390/nano10061023 ◽

2020 ◽

Vol 10 (6) ◽

pp. 1023 ◽

Cited By ~ 2

Author(s):

Ashish Chhaganlal Gandhi ◽

Chia-Liang Cheng ◽

Sheng Yun Wu

Keyword(s):

Room Temperature ◽

Excess Oxygen ◽

Ambient Atmosphere ◽

Photoluminescence Spectra ◽

X Ray Diffraction ◽

X Ray ◽

Band Emission ◽

Oxygen Ion ◽

Integrated Intensity ◽

Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

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Mechanical Alloying Behavior in the Nb-Si, Ta-Si, and Nb-Ta-Si Systems

MRS Proceedings ◽

10.1557/proc-133-415 ◽

1988 ◽

Vol 133 ◽

Cited By ~ 3

Author(s):

K. S. Kumar ◽

S. K. Mannan

Keyword(s):

High Temperature ◽

Mechanical Alloying ◽

Mechanical Milling ◽

Room Temperature ◽

Crystalline Compound ◽

X Ray Diffraction ◽

X Ray ◽

Β Phase ◽

Α Phase

ABSTRACTThe mechanical alloying behavior of elemental powders in the Nb-Si, Ta-Si, and Nb-Ta-Si systems was examined via X-ray diffraction. The line compounds NbSi2 and TaSi2 form as crystalline compounds rather than amorphous products, but Nb5Si3 and Ta5Si3, although chemically analogous, respond very differently to mechanical milling. The Ta5Si3 composition goes directly from elemental powders to an amorphous product, whereas Nb5Si3 forms as a crystalline compound. The Nb5Si3 compound consists of both the tetragonal room-temperature α phase (c/a = 1.8) and the tetragonal high-temperature β phase (c/a = 0.5). Substituting increasing amounts of Ta for Nb in Nb5Si3 initially stabilizes the α-Nb5Si3 structure preferentially, and subsequently inhibits the formation of a crystalline compound.

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