Optically Induced Paramagnetism in Amorphous Hydrogenated Silicon Nitride Thin Films
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ABSTRACTThe creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins is electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport.
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1993 ◽
pp. 421-426
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1996 ◽
Vol 43
(9)
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pp. 1592-1601
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2003 ◽
Vol 17
(09)
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pp. 387-392
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