Realization of SiO2-B2O3-TiO2 Waveguides and Reflectors on Si Substrates

1991 ◽  
Vol 244 ◽  
Author(s):  
Hartmut W. Schneider
Keyword(s):  
Single Mode ◽  
Propagation Loss ◽  
Silicon Substrates ◽  
Spectral Measurements ◽  
Waveguide Arrays ◽  
Si Substrates ◽  
Soot Deposition ◽  
Waveguide Propagation ◽  
Vertical Gap ◽  
Loss Effect

ABSTRACTTiO2-B2O3 doped silica single-mode waveguide arrays on silicon substrates were fabricated by flame hydrolysis soot deposition, glass consolidation and etching. CHF3 reactive ion etching is suitable for more than 15 μm deep vertical gap and reflector preparation. Minimum waveguide propagation loss values of (0.21±0.01) dB/cm were measured on 50 mm single-mode samples. Spectral measurements proved the absence OH absorption in the 850 to 1600 nm range and indicate scattering as the most important loss effect.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

GaAs/AlGaAs single‐mode optical waveguides with low propagation loss and strong optical confinement

1990 ◽  
Vol 56 (11) ◽  
pp. 990-992 ◽  
Author(s):  
M. Seto ◽  
A. Shahar ◽  
R. J. Deri ◽  
W. J. Tomlinson ◽  
A. Yi‐Yan
Keyword(s):  
Optical Waveguides ◽  
Single Mode ◽  
Propagation Loss ◽  
Optical Confinement

scholarly journals Deposition of Zn-containing films using atmospheric pressure plasma jet

2014 ◽  
Vol 13 (1) ◽  
Author(s):  
Oleksandr Galmiz ◽  
Monika Stupavska ◽  
Harm Wulff ◽  
Holger Kersten ◽  
Antonin Brablec ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Silicon Substrates ◽  
Atmospheric Pressure Plasma Jet ◽  
Water Solutions ◽  
Si Substrates ◽  
Pressure Plasma

AbstractThe purpose of this work was to deposit Zn-containing films on Si substrates using the commercial atmospheric pressure plasma jet “kINPen’09.” In preliminary experiments Zn-containing films were deposited on the silicon substrates immersed in water solutions of Zn(NO

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

2010 ◽  
Vol 645-648 ◽  
pp. 255-258 ◽  
Author(s):  
Nicolò Piluso ◽  
Andrea Severino ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Density ◽  
Gas Flow ◽  
Strong Relationship ◽  
Free Carrier ◽  
Silicon Substrates ◽  
Accurate Analysis ◽  
Si Substrates ◽  
Free Carrier Density ◽  
Longitudinal Optic Phonon

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.

2. Adhesion of the plasma-polymerized fluorocarbon films to silicon substrates The adhesion properties of the plasma-polymerized FC coatings were determined by using a test, already employed by Yasuda and Sharma [13] (see Fig. 1 and Table 1) in which the silicon substrates coated with plasma FC-films were boiled in a0.9% sodium chloride solution. The FC thin films produced in the processes 1 and 2 were lifted after a very short time (15 minutes). Coatings generated in process 3 were lifted after the second cycle of boiling. The films produced in processes 4 and 5 withstood the complete test procedure. The results are shown in Fig. 3. The poor adhesion of the polymerized films in the first two processes is due to the fact that these processes do not involve a plasma pre-treatment process. The difference between processes 1 and 3 is only in the plasma pre-treatment (process 1 does not contain the pre-treatment step of the silicon surface). The fluorocarbon films deposited by processes 4 and 5 have shown the best adhesion. These test results indicate that the plasma pre-treatment is very important and necessary for a good adhesion of the FC coatings to the silicon surfaces. 2.3. Patterning of FC films 2.3.1. Patterning through resist mask. The patterning of the FC films through a photoresist mask (conventional All resist AR-P351) was examined after deposition for process No. 5. Different coating parameters were investigated to improve the adhesion of the resist to the FC surface. The best adhesion results were obtained using the process parameters, shown in Table 3. Differences in the thickness uniformity of so-deposited resists were in a range below 5%. The samples were etched in a pure oxygen plasma in an RIE-system after the lithography steps (pre-bake, exposure, development, post-bake). A resolution of 2 /xm was obtained. A significant increase in the surface energy was not observed after resist stripping. The sessile contact angle of water was 103°. 2.3.2. Lift-off process for patterning thin plasma polymerized FC films. A lift-off process was also examined to pattern the thin FC films. The lithography steps were used before the plasma polymerization process was carried out (Fig. 2). A standard resist AR-P351 was coated directly onto the Si substrates. After all lithography

2014 ◽  
pp. 275-278
Keyword(s):  
Treatment Process ◽  
Test Procedure ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Fluorocarbon Films ◽  
Si Substrates ◽  
Complete Test ◽  
The Difference ◽  
Pre Treatment ◽  
Lift Off

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

In‐Situ Fabrication of YBa2Cu3O7‐x Superconducting Thin Films Directly on Silicon Substrates with Tc0 > 77K

1989 ◽  
Vol 169 ◽  
Author(s):  
C. B. Lee ◽  
R. K. Singh ◽  
S. Sharan ◽  
A. K. Singh ◽  
P. Tiwari ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulses ◽  
Superconducting Film ◽  
Laser Evaporation ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
Si Substrates ◽  
In Situ Fabrication ◽  
Substrate Temperatures

AbstractWe report in‐situ fabrication of c‐axis textured YBa2Cu3O7‐x superconducting thin films with Tco > 77K on unbuffered silicon substrates by the biased pulsed laser evaporation (PLE) technique in the temperature range of 550‐650°C. At substrate temperatures below 550°C, no c‐axis texturing of the superconducting film was observed. The YBa2Cu3O7‐x superconducting films were fabricated by ablating a bulk YBa2Cu3O7 target by a XeCl excimer laser (λ = 308 nm, τ = 45 × 10‐9 sec) in a chamber maintained at an oxygen pressure of 0.2 torr . The thickness of the films was varied from 0.3 to 0.5 nm depending on the number of laser pulses. Extensive diffusion was observed in thin films deposited at substrate temperatures above 550°C. However, microstructurally, with increase in the substrate temperature the films exhibited larger grain size and greater degree of c‐axis texturing (measured by the ratio of the (005) and (110) X‐ray diffraction peaks). This was found to give rise to better superconducting properties with Tco exceeding 77 K for YBa2Cu3O7‐x films deposited on Si substrates at 650°C.

Ultra-low-loss Single-mode Si3N4 Waveguides with 0.7 dB/m Propagation Loss

2011 ◽  
Author(s):  
Jared F. Bauters ◽  
Martijn J. R. Heck ◽  
Demis D. John ◽  
Ming-Chun Tien ◽  
Wenzao Li ◽  
...  
Keyword(s):  
Single Mode ◽  
Propagation Loss ◽  
Low Loss

High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates

2004 ◽  
Author(s):  
Virginia M. Robbins ◽  
Steven D. Lester ◽  
David P. Bour ◽  
Jeffrey N. Miller ◽  
Francoise Mertz
Keyword(s):  
High Power ◽  
Single Mode ◽  
Silicon Substrates

scholarly journals Thin Diamond Film on Silicon Substrates for Pressure Sensor Fabrication

Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3697
Author(s):  
Stefano Salvatori ◽  
Sara Pettinato ◽  
Armando Piccardi ◽  
Vadim Sedov ◽  
Alexey Voronin ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Electromagnetic Interference ◽  
Chemical Vapor ◽  
High Hardness ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Silicon Substrates ◽  
Sensing Element ◽  
Optoelectronic System ◽  
Sensor Fabrication

Thin polycrystalline diamond films chemically vapor deposited on thinned silicon substrates were used as membranes for pressure sensor fabrication by means of selective chemical etching of silicon. The sensing element is based on a simple low-finesse Fabry–Pérot (FP) interferometer. The FP cavity is defined by the end-face of a single mode fiber and the diamond diaphragm surface. Hence, pressure is evaluated by measuring the cavity length by an optoelectronic system coupled to the single mode fiber. Exploiting the excellent properties of Chemical Vapor Deposition (CVD) diamond, in terms of high hardness, low thermal expansion, and ultra-high thermal conductivity, the realized sensors have been characterized up to 16.5 MPa at room temperature. Preliminary characterizations demonstrate the feasibility of such diamond-on-Si membrane structure for pressure transduction. The proposed sensing system represents a valid alternative to conventional solutions, overcoming the drawback related to electromagnetic interference on the acquired weak signals generated by standard piezoelectric sensors.

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