The Physical and Electrical Properties of Buried Nitride Soi Structures Synthesized By Nitrogen Ion Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
C. Slawinski ◽  
B.-Y. Mao ◽  
P.-H. Chang ◽  
H.W. Lam ◽  
J.A. Keenan
Keyword(s):  
Ion Implantation ◽  
Nitrogen Concentration ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Nitrogen Ion Implantation ◽  
Donor Formation ◽  
Nitrogen Ion

ABSTRACTBuried nitride silicon-on-insulator (SOI) structures have been fabricated using the technique of nitrogen ion implantation. The crystallinity of the top silicon film was found to be exceptionally good. The minimum channeling yield, Xmin' was better than 3%. This is comparable to the value observed for single crystal silicon. The buried insulator formed during the anneals has been identified as polycrystalline α-Si3 N4 with numerous silicon inclusions. This nitride, however, has been found to remain amorphous in regions at the center of the implant where the nitrogen concentration exceeds the stoichiometric level of Si3N4. Nitrogen donor formation in the top silicon layer has also been observed.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

scholarly journals A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1118
Author(s):  
Yuan Tian ◽  
Yi Liu ◽  
Yang Wang ◽  
Jia Xu ◽  
Xiaomei Yu
Keyword(s):  
Single Crystal ◽  
Aflatoxin B1 ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Wheatstone Bridge ◽  
Silicon On Insulator ◽  
Passivation Layer ◽  
Spring Constant ◽  
Trace Level ◽  
Crystal Silicon

In this paper, a polyimide (PI)/Si/SiO2-based piezoresistive microcantilever biosensor was developed to achieve a trace level detection for aflatoxin B1. To take advantage of both the high piezoresistance coefficient of single-crystal silicon and the small spring constant of PI, the flexible piezoresistive microcantilever was designed using the buried oxide (BOX) layer of a silicon-on-insulator (SOI) wafer as a bottom passivation layer, the topmost single-crystal silicon layer as a piezoresistor layer, and a thin PI film as a top passivation layer. To obtain higher sensitivity and output voltage stability, four identical piezoresistors, two of which were located in the substrate and two integrated in the microcantilevers, were composed of a quarter-bridge configuration wheatstone bridge. The fabricated PI/Si/SiO2 microcantilever showed good mechanical properties with a spring constant of 21.31 nN/μm and a deflection sensitivity of 3.54 × 10−7 nm−1. The microcantilever biosensor also showed a stable voltage output in the Phosphate Buffered Saline (PBS) buffer with a fluctuation less than 1 μV @ 3 V. By functionalizing anti-aflatoxin B1 on the sensing piezoresistive microcantilever with a biotin avidin system (BAS), a linear aflatoxin B1 detection concentration resulting from 1 ng/mL to 100 ng/mL was obtained, and the toxic molecule detection also showed good specificity. The experimental results indicate that the PI/Si/SiO2 flexible piezoresistive microcantilever biosensor has excellent abilities in trace-level and specific detections of aflatoxin B1 and other biomolecules.

Transfer of an ultrathin single crystal silicon film from a Silicon On Insulator to a polymer

2020 ◽  
pp. 100107
Author(s):  
L.G. Michaud ◽  
E. Azrak ◽  
C. Castan ◽  
F. Fournel ◽  
F. Rieutord ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon

Thermal Conductivity of Ultra Thin Single Crystal Silicon Layers: Part II — Experimental Data and Modeling at High Temperatures

2004 ◽  
Author(s):  
Wenjun Liu ◽  
Mehdi Asheghi ◽  
K. E. Goodson
Keyword(s):  
Experimental Data ◽  
Thermal Conductivity ◽  
Single Crystal ◽  
High Temperatures ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Boltzmann Transport ◽  
Crystal Silicon ◽  
Strained Si

Simulations of the temperature field in Silicon-on-Insulator (SOI) and strained-Si transistors can benefit from experimental data and modeling of the thin silicon layer thermal conductivity at high temperatures. This work presents the first experimental data for 20 and 100 nm thick single crystal silicon layers at high temperatures and develops algebraic expressions to account for the reduction in thermal conductivity due to the phonon-boundary scattering for pure and doped silicon layers. The model applies to temperatures range 300–1000 K for silicon layer thicknesses from 10 nm to 1 μm (and even bulk) and agrees well with the experimental data. In addition, the model has an excellent agreement with the predictions of thin film thermal conductivity based on thermal conductivity integral and Boltzmann transport equation, although it is significantly more robust and convenient for integration into device simulators. The experimental data and predictions are required for accurate thermal simulation of the semiconductor devices, nanostructures and in particular the SOI and strained-Si transistors.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

2005 ◽  
Vol 34 (11) ◽  
pp. L53-L56 ◽  
Author(s):  
Enxia Zhang ◽  
Jiayin Sun ◽  
Jing Chen ◽  
Zhengxuan Zhang ◽  
Xi Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Radiation Hardness ◽  
Silicon On Insulator ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Lateral Seeding of Silicon-On-Insulator Using an Elliptical Laser Beam: A Comparison of Scanning Methods

1984 ◽  
Vol 33 ◽  
Author(s):  
P. Zorabedian ◽  
T. I. Kamins
Keyword(s):  
Laser Beam ◽  
Single Crystal ◽  
Leakage Current ◽  
Silicon Film ◽  
Stacking Faults ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Mos Transistor ◽  
Lateral Offset

ABSTRACTTwo scanning methods for laterally-seeded recrystallization of striped silicon-on-insulator/seed structures with an elliptical laser beam are discussed. One method requires repeated remelting of the silicon film and is controlled by the temperature of the substrate, which is locally heated by the beam. This method results in very few defects and single-crystal silicon-on-insulator stripes up to 50 μm wide. The second method involves little remelting and is primarily controlled by the lateral offset of the beam with respect to the stripes. Single-crystal silicon-on-insulator stripes up to 40 μm wide have been obtained, with defects consisting primarily of stacking faults and twins, as well as some grain boundaries. These defects show little effect on MOS transistor leakage current.

Thin-Film Transistors in CO2-Laser Crystallized Silicon Films On Fused Silica

1982 ◽  
Vol 13 ◽  
Author(s):  
N. M. Johnson ◽  
H. C. Tuan ◽  
M. D. Moyer ◽  
M. J. Thompson ◽  
D. K. Biegelsen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Fused Silica ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Bulk Glass ◽  
Crystal Silicon ◽  
Glass Substrates

ABSTRACTThin-film transistors (TFT) have been fabricated in scanned CO2 laser-crystallized silicon films on bulk fused silica. In n-channel enhancement-mode transistors, it is demonstrated that an excessively large leakage current can be electric-field modulated with a gate electrode located beneath the silicon layer. This dual-gate configuration provides direct verification on bulk glass substrates of back-channel leakage as has recently been demonstrated for beam-crystallized silicon films on thermal oxides over silicon wafers. With the application of deep-channel ion implantation to suppress back-channel leakage, high-peformance TFTs have been fabricated in single-crystal silicon films on fused silica. The results demonstrate that scanned CO 2 laser processing of silicon films on bulk glass can provide the basis for a silicon-on-insulator technology.

Silicide Contacts for Sub-0.25 μm Devices

1999 ◽  
Vol 564 ◽  
Author(s):  
L. J. Chen ◽  
S. L. Cheng ◽  
S. M. Chang ◽  
Y. C. Peng ◽  
H. Y. Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Silicon Layer ◽  
Metal Contacts ◽  
Nitrogen Ion Implantation ◽  
Selective Epitaxial Growth ◽  
Nitrogen Ion ◽  
Thermal Stability Of

AbstractLow resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μ m devices. In the present paper, we review recent progress in the investigations of lowresistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer, improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001 )Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Layers

2005 ◽  
Vol 128 (1) ◽  
pp. 75-83 ◽  
Author(s):  
Wenjun Liu ◽  
Mehdi Asheghi
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Data Storage ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Thermal Engineering ◽  
Boltzmann Transport ◽  
Crystal Silicon ◽  
Strained Si

Self-heating in deep submicron transistors (e.g., silicon-on-insulator and strained-Si) and thermal engineering of many nanoscale devices such as nanocalorimeters and high-density thermomechanical data storage are strongly influenced by thermal conduction in ultra-thin silicon layers. The lateral thermal conductivity of single-crystal silicon layers of thicknesses 20 and 100nm at temperatures between 30 and 450K are measured using joule heating and electrical-resistance thermometry in suspended microfabricated structures. In general, a large reduction in thermal conductivity resulting from phonon-boundary scattering is observed. Thermal conductivity of the 20nm thick silicon layer at room temperature is nearly 22Wm−1K−1, compared to the bulk value, 148Wm−1K−1. The predictions of the classical thermal conductivity theory that accounts for the reduced phonon mean free paths based on a solution of the Boltzmann transport equation along a layer agrees well with the experimental results.

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