Interactions and Stability of Cu on CoSi2

1992 ◽  
Vol 260 ◽  
Author(s):  
Y. -T. Shy ◽  
S. P. Murarka ◽  
A. R. Sitaram ◽  
P.-J. Ding ◽  
W. A. Lanford
Keyword(s):  
Large Scale ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Rutherford Back Scattering ◽  
Back Scattering ◽  
Large Scale Integration ◽  
Multi Level ◽  
The Stability ◽  
Scale Integration

ABSTRACTCopper is being investigated for application as multi-level interconnection metal in silicon ultra-large-scale integration (ULSI). On the other hand, COSi2 is being tested for application as contacts in sub-half micron ULSI circuits. Copper will thus be used on COSi2 to bring the electrical connection to the outside world. In this investigation we have therefore studied the interactions of copper with CoSi2 employing sheet resistance measurements (four-point probe), Rutherford back scattering (RBS), and X-ray diffraction (XRD). In addition the stability of the Schottky diodes, n-Si/CoS2/Cu, has been investigated as a function of the heat treatment in the range of room temperature to 600° C in argon-3% hydrogen mixture gas ambient. Both the measurements of the analytical and electrical characteristics show that Cu on n-Si/CoSi2 is stable at least up to a 30 minutes anneal at 600°C in argon-3% hydrogen medium. These results will be presented and discussed.

scholarly journals Large Photovoltaic Power Plants Integration: A Review of Challenges and Solutions

Energies ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3798 ◽  
Author(s):  
Mansouri ◽  
Lashab ◽  
Sera ◽  
Guerrero ◽  
Cherif
Keyword(s):  
System Integration ◽  
Power Plants ◽  
Large Scale ◽  
System Stability ◽  
Pv System ◽  
Pv Systems ◽  
Large Scale Integration ◽  
Voltage Limit ◽  
The Stability ◽  
Scale Integration

Renewable energy systems (RESs), such as photovoltaic (PV) systems, are providing increasingly larger shares of power generation. PV systems are the fastest growing generation technology today with almost ~30% increase since 2015 reaching 509.3 GWp worldwide capacity by the end of 2018 and predicted to reach 1000 GWp by 2022. Due to the fluctuating and intermittent nature of PV systems, their large-scale integration into the grid poses momentous challenges. This paper provides a review of the technical challenges, such as frequency disturbances and voltage limit violation, related to the stability issues due to the large-scale and intensive PV system penetration into the power network. Possible solutions that mitigate the effect of large-scale PV system integration on the grid are also reviewed. Finally, power system stability when faults occur are outlined as well as their respective achievable solutions.

Simulation of Dislocation Accumulation in Impurity Doped-ULSI Cells and Electric Characteristic Evaluations

2016 ◽  
Vol 10 (2) ◽  
pp. 195-200
Author(s):  
Michihiro Sato ◽  
◽  
Yosuke Takahashi ◽  
◽  
Keyword(s):  
Large Scale ◽  
Semiconductor Devices ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Large Scale Integration ◽  
Current Voltage Curve ◽  
Impurity Doped ◽  
Crystallographic Defect ◽  
Analytical System ◽  
Scale Integration

The performance of semiconductor devices has improved on introducing increasing refinements to the structures of these devices. This has created various problems at the atomic level. In particular, the presence of dislocations, a type of crystallographic defect, within semiconductor devices poses a major problem. Dislocations accumulated within the device obstruct the movement of electrons and adversely affect the electrical characteristics of the device. However, previous investigations have not sufficiently clarified the relationship between accumulated dislocations and the electrical characteristics of a semiconductor. In this study, we focus on dislocations produced in the fabrication of an impurity-doped ultra-large-scale integration (ULSI) device and, based on a crystal plasticity analysis, perform a simulation of the accumulation of dislocations within the device during the cooling process. We establish an analytical system by which the obtained information on dislocations is applied to a device simulator, in order to evaluate the electrical characteristics by considering the accumulation of dislocations. We investigate the effects that dislocation density and density distribution have on the characteristic current-voltage curve of the device.

Microstructure and Mechanical Properties of Thin Al-Si-Ge Films

1996 ◽  
Vol 436 ◽  
Author(s):  
S. Kirchner ◽  
O. Kraft ◽  
S. P. Baker ◽  
E. Arzt
Keyword(s):  
Mechanical Properties ◽  
Large Scale ◽  
X Ray Diffraction ◽  
Film Properties ◽  
Transmission Electron ◽  
First Results ◽  
Large Scale Integration ◽  
Scale Integration ◽  
Kinetics Of ◽  
Precipitate Structure

AbstractThe mechanical properties are thought to play an important role in the performance of metallization materials for very large scale integration (VLSI) applications. From recent investigations on bulk materials it is known that Al-Si-Ge alloys can be very efficiently strengthened with only a small amount of the alloying elements. These alloys are potential candidates for future metallizations both because Si and Ge are compatible with the existing semiconductor technology, and because the resistivity is expected to be low.We present the first results of detailed characterizations of Al-Si-Ge thin films as a function of sputter conditions and heat treatments. The microstructure was characterized using x-ray diffraction and transmission electron microscopy. The kinetics of precipitation were studied using resistance measurements. Room temperature hardness was investigated using nanoindentation, and the mechanical properties at temperatures up to 240°C were examined using a substrate curvature method. The correlation between precipitate structure and film properties is discussed.

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