Microstructure and Mechanical Properties of Thin Al-Si-Ge Films

1996 ◽  
Vol 436 ◽  
Author(s):  
S. Kirchner ◽  
O. Kraft ◽  
S. P. Baker ◽  
E. Arzt
Keyword(s):  
Mechanical Properties ◽  
Large Scale ◽  
X Ray Diffraction ◽  
Film Properties ◽  
Transmission Electron ◽  
First Results ◽  
Large Scale Integration ◽  
Scale Integration ◽  
Kinetics Of ◽  
Precipitate Structure

AbstractThe mechanical properties are thought to play an important role in the performance of metallization materials for very large scale integration (VLSI) applications. From recent investigations on bulk materials it is known that Al-Si-Ge alloys can be very efficiently strengthened with only a small amount of the alloying elements. These alloys are potential candidates for future metallizations both because Si and Ge are compatible with the existing semiconductor technology, and because the resistivity is expected to be low.We present the first results of detailed characterizations of Al-Si-Ge thin films as a function of sputter conditions and heat treatments. The microstructure was characterized using x-ray diffraction and transmission electron microscopy. The kinetics of precipitation were studied using resistance measurements. Room temperature hardness was investigated using nanoindentation, and the mechanical properties at temperatures up to 240°C were examined using a substrate curvature method. The correlation between precipitate structure and film properties is discussed.

scholarly journals Kinetics and mechanism of planar nanowire growth

2019 ◽  
Vol 117 (1) ◽  
pp. 152-160 ◽  
Author(s):  
Amnon Rothman ◽  
Vladimir G. Dubrovskii ◽  
Ernesto Joselevich
Keyword(s):  
Surface Diffusion ◽  
Large Scale ◽  
Nanowire Growth ◽  
Power Exponent ◽  
Material Transport ◽  
Guided Growth ◽  
Large Scale Integration ◽  
Scale Integration ◽  
And Control ◽  
Kinetics Of

Surface-guided growth of planar nanowires offers the possibility to control their position, direction, length, and crystallographic orientation and to enable their large-scale integration into practical devices. However, understanding of and control over planar nanowire growth are still limited. Here, we study theoretically and experimentally the growth kinetics of surface-guided planar nanowires. We present a model that considers different kinetic pathways of material transport into the planar nanowires. Two limiting regimes are established by the Gibbs–Thomson effect for thinner nanowires and by surface diffusion for thicker nanowires. By fitting the experimental data for the length–diameter dependence to the kinetic model, we determine the power exponent, which represents the dimensionality of surface diffusion, and results to be different for planar vs. nonplanar nanowires. Excellent correlation between the model predictions and the data is obtained for surface-guided Au-catalyzed ZnSe and ZnS nanowires growing on both flat and faceted sapphire surfaces. These data are compared with those of nonplanar nanowire growth under similar conditions. The results indicate that, whereas nonplanar growth is usually dominated by surface diffusion of precursor adatoms over the nanowire walls, planar growth is dominated by surface diffusion over the substrate. This mechanism of planar nanowire growth can be extended to a broad range of material–substrate combinations for higher control toward large-scale integration into practical devices.

Interactions and Stability of Cu on CoSi2

1992 ◽  
Vol 260 ◽  
Author(s):  
Y. -T. Shy ◽  
S. P. Murarka ◽  
A. R. Sitaram ◽  
P.-J. Ding ◽  
W. A. Lanford
Keyword(s):  
Large Scale ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Rutherford Back Scattering ◽  
Back Scattering ◽  
Large Scale Integration ◽  
Multi Level ◽  
The Stability ◽  
Scale Integration

ABSTRACTCopper is being investigated for application as multi-level interconnection metal in silicon ultra-large-scale integration (ULSI). On the other hand, COSi2 is being tested for application as contacts in sub-half micron ULSI circuits. Copper will thus be used on COSi2 to bring the electrical connection to the outside world. In this investigation we have therefore studied the interactions of copper with CoSi2 employing sheet resistance measurements (four-point probe), Rutherford back scattering (RBS), and X-ray diffraction (XRD). In addition the stability of the Schottky diodes, n-Si/CoS2/Cu, has been investigated as a function of the heat treatment in the range of room temperature to 600° C in argon-3% hydrogen mixture gas ambient. Both the measurements of the analytical and electrical characteristics show that Cu on n-Si/CoSi2 is stable at least up to a 30 minutes anneal at 600°C in argon-3% hydrogen medium. These results will be presented and discussed.

scholarly journals Analysis of fast protein phosphorylation kinetics in single cells on a microfluidic chip

Lab on a Chip ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 726-734 ◽  
Author(s):  
Matthias Blazek ◽  
Tomas Silva Santisteban ◽  
Roland Zengerle ◽  
Matthias Meier
Keyword(s):  
Protein Phosphorylation ◽  
Cell Cultures ◽  
Microfluidic Chip ◽  
Chemical Control ◽  
Large Scale ◽  
Single Cells ◽  
Fast Kinetics ◽  
Large Scale Integration ◽  
Scale Integration ◽  
Kinetics Of

In the present study, we developed a microfluidic large-scale integration (mLSI) platform for the temporal and chemical control of cell cultures to study fast kinetics of protein phosphorylation.

Plant hormones, plant growth regulators

2014 ◽  
Vol 155 (26) ◽  
pp. 1011-1018 ◽  
Author(s):  
György Végvári ◽  
Edina Vidéki
Keyword(s):  
Nervous System ◽  
Growth And Development ◽  
Large Scale ◽  
Essential Role ◽  
Higher Plants ◽  
Structure And Function ◽  
Wide Sense ◽  
Large Scale Integration ◽  
Scale Integration ◽  
And Function

Plants seem to be rather defenceless, they are unable to do motion, have no nervous system or immune system unlike animals. Besides this, plants do have hormones, though these substances are produced not in glands. In view of their complexity they lagged behind animals, however, plant organisms show large scale integration in their structure and function. In higher plants, such as in animals, the intercellular communication is fulfilled through chemical messengers. These specific compounds in plants are called phytohormones, or in a wide sense, bioregulators. Even a small quantity of these endogenous organic compounds are able to regulate the operation, growth and development of higher plants, and keep the connection between cells, tissues and synergy beween organs. Since they do not have nervous and immume systems, phytohormones play essential role in plants’ life. Orv. Hetil., 2014, 155(26), 1011–1018.

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