Chemical and Electrical Characterization of the CoGa/GaAs Interface as A Function of Temperature: A Thermally Stable Schottky Barrier up to 500°C

1992 ◽  
Vol 260 ◽  
Author(s):  
A. Alec Talin ◽  
Tue Ngo ◽  
R. Stanley Williams
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Lattice Matched ◽  
Better Than ◽  
Oriented Single Crystal

ABSTRACTX-ray diffraction studies and current-voltage measurements have been performed on a (100) oriented single crystal thin film of CoxGa1-x (x = 0.42) grown epitaxially on n-GaAs, from 300°C to 900°C. At this composition, CoxGa1-x, which has a broad range of homogeneity and a variable lattice parameter, is lattice matched to GaAs better than 0.5%. A Schottky barrier height of 0.68eV and an ideality factor of 1.07 have been measured up to 500°C, with significant barrier degradation at 600°C. At 700°C formation of the CoGa3 phase and a shift in CoxGa1-x stoichiometry to its bulk thermodynamically most stable composition of Co.45Ga.55 was observed with x-ray diffraction. At 800°C Co2AS formed, and at 900°C only CoGa3 and Co2As phases remained in contact with GaAs.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

1999 ◽  
Vol 595 ◽  
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

AbstractWe report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Preparation and Electrical Characterization of Poly(Aniline) NanoClay Composites

2015 ◽  
Vol 34 (4) ◽  
Author(s):  
Esma Ahlatcioǧlu ◽  
Bahire Filiz şenkal ◽  
Mustafa Okutan
Keyword(s):  
Electrical Characterization ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Inorganic Hybrid ◽  
X Ray ◽  
Ft Ir ◽  
Doped Polyaniline ◽  
Poly Aniline ◽  
Scanning Electron

AbstractIn this work, synthesis and characterization of composite materials based on NanoClay(NC) and boric acid doped PolyAniline (PANI) is studied. PANI was successfully incorporated into NC to form PANI-NC composites. The resulting organic-inorganic hybrid material, PANI-NC was characterized by various physicochemical techniques. Formation of PANI inside the clay tactoid has been confirmed by X-ray diffraction studies (XRD), scanning electron microscope (SEM) and FT-IR. Also, conductivity and physical properties of the PANI-NC composites were investigated.

SYNTHESIS AND CHARACTERIZATION OF NANOCRYSTALLINE FeNi AND Ni3Fe ALLOYS

2011 ◽  
Vol 25 (07) ◽  
pp. 1013-1019 ◽  
Author(s):  
S. AZADEHRANJBAR ◽  
F. KARIMZADEH ◽  
M. H. ENAYATI
Keyword(s):  
Ball Mill ◽  
Morphological Evolution ◽  
Lattice Parameter ◽  
Internal Stresses ◽  
Alloy Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Powder Particles ◽  
Fe Alloys

Nanocrystalline FeNi and Ni 3 Fe alloys were prepared by mechanical alloying of Fe and Ni elemental powders using a planetary ball mill under protection atmosphere. X-ray diffraction measurements were performed to follow alloy formation process in these alloys. A heat treatment of 1 h at 800°C was carried out to relax the internal stresses of the milled samples. Morphological evolution of powder particles was revealed by scanning electron microscopy. The value of lattice parameter was reached to 0.35762 nm and the hardness was found to be 686 HV at 30 h milled FeNi powder. In the case of Ni 3 Fe the values of 0.3554 nm and 720 HV were obtained for lattice parameter and hardness, respectively.

Studied on Structural Characterization of Lanthanum Doped Barium Titanium Ceramics

2015 ◽  
Vol 819 ◽  
pp. 198-203
Author(s):  
Nur Farahin Abdul Hamid ◽  
Rozana Aina Maulat Osman ◽  
Mohd Sobri Idris ◽  
Tze Qing Tan
Keyword(s):  
Crystal Structure ◽  
Lattice Parameter ◽  
Phase Changes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
La Doped ◽  
Conventional Solid State Synthesis

La-doped barium titanate (BaTiO3) was prepared using conventional solid state synthesis route. All peaks for sample x=0 are approaching the phase pure of BaTiO3 structure with tetragonal crystal structure (P4mm). Sintering of pressed powder are performed at 1300oC, 1400oC and 1450oC for overnight for pure BaTiO3 and 1350oC for 3 days for BaTiO3 doped lanthanum with intermittent grinding. Phase transition was studied by different x composition. The changes in the crystal structure of the composition x=0.1 and 0.2 were detected by using X-ray diffraction (XRD). The phase changes between tetragonal-cubic and cubic-tetragonal depending on the temperature. Rietveld Refinement analysis is carried out to determine the lattice parameter and unit cell for BaTiO3.

Characterization of microstructures in Inconel 625 using X-ray diffraction peak broadening and lattice parameter measurements

2004 ◽  
Vol 51 (1) ◽  
pp. 59-63 ◽  
Author(s):  
Sanjay K. Rai ◽  
Anish Kumar ◽  
Vani Shankar ◽  
T. Jayakumar ◽  
K. Bhanu Sankara Rao ◽  
...  
Keyword(s):  
Lattice Parameter ◽  
Diffraction Peak ◽  
Inconel 625 ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Broadening

Photoreflectance Characterization of InGaAs Lattice Matched to InP

1993 ◽  
Vol 324 ◽  
Author(s):  
V. Bellani ◽  
M. Amiotti ◽  
M. Geddo ◽  
G. Guizzetti ◽  
G. Landgren
Keyword(s):  
Energy Gap ◽  
Lattice Mismatch ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Interfacial Strain ◽  
Valence Bands ◽  
Lattice Matched

AbstractWe measured photoreflectance (PR) spectra at different temperatures between 80 and 300 K, and optical absorption (OA) at 3 K on MOVPE grown Inl-xGaxAs nearly lattice-matched to InP. x-ray diffraction measurements gave a lattice mismatch δa/ao = -0.9.10−3 between ternary alloy and InP, corresponding to × = 0.485. We obtained the energy gap dependence on T from PR spectra. The blue shift of the gap was accounted for in terms of compositional difference with respect to the perfectly lattice matched alloy (× = 0.472), and elastic strain; moreover PR and OA showed evidence of the valence bands splitting at k = 0 due to interfacial strain, in fine agreement with theory.

Preparation and Preliminary Characterization of Chitosan from Catharsius molossus Discards

2012 ◽  
Vol 548 ◽  
pp. 77-81
Author(s):  
Jia Hua Ma ◽  
Cheng Jia Tan ◽  
Xia Deng ◽  
Chao Xin
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Oxalic Acid ◽  
Room Temperature ◽  
Orthogonal Design ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Techniques ◽  
Better Than

Preparation techniques of chitosan from Catharsius molossus L. processing discards were studied by orthogonal design. Preparation techniques were as follows:demineralizing: soaked for 30 min at 80 °C with 1.3 mol•L-1 HCl, then kept for 12 h under room temperature. Deproteinization and delipidation: treated for 6 h at 90 °C with 4 mol•L-1 NaOH. Decolorizing: soaked at room temperature with 3% KMnO4, then treated with 2% oxalic acid at 70 °C. Deacetylation: treated for 6 h at 110 °Cwith 14 mol•L-1 NaOH. Properties of chitosan were characterized by Fourier transform infrared spectroscopy(FTIR), X-ray diffraction (XRD), etc. It proved the technique was stable and feasible. The result also preliminarily showed that chitosan from Catharsius molossus L. was better than shrimp’s. It will be widely applicated in biomedical and other industrial areas with such exiciting properties.

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