X-ray diffraction and electrical characterization of photo-CVD zirconium oxide layers

2003 ◽  
Vol 208-209 ◽  
pp. 374-377 ◽  
Author(s):  
J.J. Yu ◽  
I.W. Boyd
Keyword(s):  
Zirconium Oxide ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Oxide Layers ◽  
X Ray

Preparation and Electrical Characterization of Poly(Aniline) NanoClay Composites

2015 ◽  
Vol 34 (4) ◽  
Author(s):  
Esma Ahlatcioǧlu ◽  
Bahire Filiz şenkal ◽  
Mustafa Okutan
Keyword(s):  
Electrical Characterization ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Inorganic Hybrid ◽  
X Ray ◽  
Ft Ir ◽  
Doped Polyaniline ◽  
Poly Aniline ◽  
Scanning Electron

AbstractIn this work, synthesis and characterization of composite materials based on NanoClay(NC) and boric acid doped PolyAniline (PANI) is studied. PANI was successfully incorporated into NC to form PANI-NC composites. The resulting organic-inorganic hybrid material, PANI-NC was characterized by various physicochemical techniques. Formation of PANI inside the clay tactoid has been confirmed by X-ray diffraction studies (XRD), scanning electron microscope (SEM) and FT-IR. Also, conductivity and physical properties of the PANI-NC composites were investigated.

ELECTRICAL CHARACTERIZATION OF ZIRCONIUM OXIDE LAYERS GROWN BY LIQUID DELIVERY MOCVD

2005 ◽  
Vol 74 (1) ◽  
pp. 113-122 ◽  
Author(s):  
M. LISKER ◽  
M. SILINSKAS ◽  
S. MATICHYN ◽  
E. P. BURTE
Keyword(s):  
Zirconium Oxide ◽  
Electrical Characterization ◽  
Oxide Layers ◽  
Liquid Delivery

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

scholarly journals Isolation and Characterization of the Unexpected 1-N-Octyloxyperopyrene: A Solution-Processable P-Type Organic Semi-Conductor

2019 ◽  
Author(s):  
Marta Martínez-Abadía ◽  
Gabriella Antonicelli ◽  
Akinori Saeki ◽  
Manuel Melle-Franco ◽  
Aurelio Mateo-Alonso
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isolation And Characterization ◽  
Polycyclic Aromatic ◽  
P Type ◽  
Liquid Deposition

<div><div><div><p>The synthesis and optical, electrochemical, thermal and electrical characterization of a new and unexpected 1-n-octyloxyperopyrene is reported. The structure of 1-n- octyloxyperopyrene has been unambiguously established by single crystal X-ray diffraction. The solubility of this polycyclic aromatic hydrocarbon, endowed by the alkoxy substituent, allows the fabrication of thin film field-effect transistors by liquid deposition methods. These devices show hole mobilities up to 1.61 × 10–3 cm2 V–1 s–1.</p></div></div></div>

Chemical and Electrical Characterization of the CoGa/GaAs Interface as A Function of Temperature: A Thermally Stable Schottky Barrier up to 500°C

1992 ◽  
Vol 260 ◽  
Author(s):  
A. Alec Talin ◽  
Tue Ngo ◽  
R. Stanley Williams
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Lattice Matched ◽  
Better Than ◽  
Oriented Single Crystal

ABSTRACTX-ray diffraction studies and current-voltage measurements have been performed on a (100) oriented single crystal thin film of CoxGa1-x (x = 0.42) grown epitaxially on n-GaAs, from 300°C to 900°C. At this composition, CoxGa1-x, which has a broad range of homogeneity and a variable lattice parameter, is lattice matched to GaAs better than 0.5%. A Schottky barrier height of 0.68eV and an ideality factor of 1.07 have been measured up to 500°C, with significant barrier degradation at 600°C. At 700°C formation of the CoGa3 phase and a shift in CoxGa1-x stoichiometry to its bulk thermodynamically most stable composition of Co.45Ga.55 was observed with x-ray diffraction. At 800°C Co2AS formed, and at 900°C only CoGa3 and Co2As phases remained in contact with GaAs.

Formulation Development and Characterization of Rilpivirine Nanosuspension for Improved Solubility by Nanomilling

2019 ◽  
Vol 4 (2) ◽  
pp. 130-137
Author(s):  
Satya Sankar Sahoo ◽  
Chandu Babu Rao
Keyword(s):  
Zirconium Oxide ◽  
Particle Diameter ◽  
In Vivo Studies ◽  
X Ray Diffraction ◽  
Formulation Development ◽  
Flow Properties ◽  
X Ray ◽  
Sedimentation Volume

The objective of this study was to formulate and optimize a stable rilpivirine nanosuspension. In the present study, yttrium stabilized zirconium oxide beads being used as the milling media in nanomilling process. The lyophilized nanocrystals were being characterized by particle size distribution (PSD), polydispersity index (PDI), X-ray diffraction (XRD) and FTIR (Fourier transform infrared spectroscopy). Optimized nanosuspension has mean particle diameter of 266 nm, PDI of 0.158, zeta potential of 22.1 mV and spherical in shape with surface oriented stabilizer molecules. Flow properties like sedimentation volume, poura-bility with the F value of 0.94 and also the redispersability even after 4 weeks of storage was found to be satisfactory for the optimized nano-suspension. Many folds increase in solubility and rate of drug release observed, The lyophilized nanocrystals retains its crystallinity after nanomilling, stable chemically with high drug content, therefore, the developed nanosuspension would be an alternative better formulation than its conventional formulation to address its bioavailability issue. However, this should be further confirmed by appropriate techniques in vivo studies.

Deposition and Electrical Characterization of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J-P. Maria ◽  
Wes Hackenberger ◽  
S. Trolier-McKinstry
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Piezoelectric Actuators ◽  
Laser Deposition ◽  
Processing Conditions ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACT(001)-oriented heterostructures consisting of LaAlCO3 substrates, SrRuO3 bottom electrodes, and Pb(Mg1/3Nb2/3) O3-PbTiO3 (PMN-PT) piezoelectric actuators were deposited by pulsed laser deposition (PLD). 4-circle x-ray diffraction analysis confirmed the epitaxial growth of each layer. In general, the electrical properties were found to be very sensitive to the processing conditions, in particular, the growth temperature. At growth temperatures below ∼620°C, the temperature dependence of the dielectric constant and the onset of a hysteritic polarization were found to be depressed by as much as 80 °C. When growth temperatures were increased above 660°C, electrical properties with temperature dependencies more consistent with those of single crystals were observed.

Characterization of Metallic Zirconium Sponge

2014 ◽  
Vol 805 ◽  
pp. 700-705
Author(s):  
Sergio Ciampolini Nogueira de Lima ◽  
Edson Pereira Soares ◽  
Marco Andreoli ◽  
Rubens Chiba ◽  
Emília Satoshi Miyamaru Seo
Keyword(s):  
Mechanical Properties ◽  
Chemical Composition ◽  
Zirconium Oxide ◽  
Vickers Microhardness ◽  
Zirconium Alloys ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metallic Element ◽  
Chemical Purity

When used commercially, the zirconium alloys are utilized in the shape of tubes to encapsulate the UO2 pellets in the PWR and BWR Power reactors. The metallic zirconium is an essential metallic element for the types of alloys in which the obtainment route rests in the ore opening for the production of zirconium oxide followed by the processes of pelletizing, chlorination, purification, reduction and distillation. Through the technique of X-Ray Diffraction the present phases were identified. Using the Fluorescence of an X ray it was possible to determined the chemical composition of the zirconium sponge. The mechanical properties of Vickers microhardness were obtained using a microdurometer. As a result, it was established that it is possible to define a methodology for the preparation of a sample of metallic zirconium for the microstructure analysis, as well as that its chemical purity is 97,265% linked to the microhardness of approximately 51 HV.

scholarly journals Isolation and Characterization of the Unexpected 1-N-Octyloxyperopyrene: A Solution-Processable P-Type Organic Semi-Conductor

2019 ◽  
Author(s):  
Marta Martínez-Abadía ◽  
Gabriella Antonicelli ◽  
Akinori Saeki ◽  
Manuel Melle-Franco ◽  
Aurelio Mateo-Alonso
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isolation And Characterization ◽  
Polycyclic Aromatic ◽  
P Type ◽  
Liquid Deposition

<div><div><div><p>The synthesis and optical, electrochemical, thermal and electrical characterization of a new and unexpected 1-n-octyloxyperopyrene is reported. The structure of 1-n- octyloxyperopyrene has been unambiguously established by single crystal X-ray diffraction. The solubility of this polycyclic aromatic hydrocarbon, endowed by the alkoxy substituent, allows the fabrication of thin film field-effect transistors by liquid deposition methods. These devices show hole mobilities up to 1.61 × 10–3 cm2 V–1 s–1.</p></div></div></div>

scholarly journals Photoluminescence in ZrO2 doped with Y and La

Cerâmica ◽  
2007 ◽  
Vol 53 (325) ◽  
pp. 99-103 ◽  
Author(s):  
W. S. C. de Sousa ◽  
D. M. A. Melo ◽  
J. E. C. da Silva ◽  
R. S. Nasar ◽  
M. C. Nasar ◽  
...  
Keyword(s):  
Solid Solution ◽  
Phase Formation ◽  
Zirconium Oxide ◽  
Yttrium Nitrate ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
X Ray ◽  
Oxide Solid Solution

This study aims to describe the synthesis and optical characterization of a nanometric zirconium oxide solid solution containing yttrium and lanthanum. Zirconium citrate, yttrium nitrate and lanthanum nitrate were mixed in the ratios: 94 mol% of ZrO2 - 6 mol% of Y2O3 and 92 mol% of ZrO2 - 6 mol % of Y2O3 - 2 mol % of La2O3. FTIR analysis shows organic material in decomposition and thermal analysis shows the transformation from the tetragonal to the monoclinic phase of zirconia, the loss of water molecule and zirconium dehydroxylation. The X-ray diffraction analysis shows a homogeneous phase formation of ZrO2-Y2O3-La2O3 demonstrating that lanthanum addition does not cause phase formation, promoting a solid solution based on zirconia with cubic structure. The photoluminescence spectra show absorption bands at 562 nm and 572 nm (350 °C) and specific absorption bands at 543 nm, 561 nm, 614 nm and 641 nm (900 °C). The photoluminescence effect at low temperature is caused by defects such as (Y Zr,Y O)', (2Y Zr,V O)'' and V O. Emissions at 614 nm and 641 nm are caused by O-2p -> Zr-4d transition. An emission at 543 nm can be attributed to LaO8 centers with O-2p -> La-5d transition.

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