Thin Film Ag/YBCO Multistructures for Metal Contact Applications

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Powers ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Ybco Film ◽  
Electrical Contact ◽  
Ceramic Substrate ◽  
Metal Contact ◽  
Intimate Contact ◽  
Sputter Deposited ◽  
Maximum Contact

ABSTRACTA technique is presented where Ag is initially sputter deposited on a single crystal ceramic substrate followed by in situ deposition of YBa2Cu3O7δ The resulting microstructure shows Ag islands amidst a c-axis oriented YBCO film, apparently with intimate contact between the YBCO and substrate. This morphology appears ideal for electrical contact to the {hko} surfaces of the superconductor with current carrying CuO planes in maximum contact with the Ag.

scholarly journals In situ TEM oxidation study of Fe thin-film transformation to single-crystal magnetite nanoparticles

2020 ◽  
Vol 55 (27) ◽  
pp. 12897-12905
Author(s):  
Leonardo Lari ◽  
Stephan Steinhauer ◽  
Vlado K. Lazarov
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Magnetite Nanoparticles ◽  
In Situ Tem ◽  
Oxidation Study

T0302-2-6 In-situ TEM Experiment of Tensile Testing for Single-Crystal-Silicon Thin Film

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 263-264
Author(s):  
Taeko ANDO ◽  
Hidekazu Ishihara ◽  
Masahiro Nakajima ◽  
Shigeo Arai ◽  
Toshio Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Tensile Testing ◽  
Single Crystal Silicon ◽  
In Situ Tem ◽  
Silicon Thin Film ◽  
Crystal Silicon

Interface Conduction between Conductive ReO3 Thin Film and NdBa2Cu3O6 Thin Film

2002 ◽  
Vol 751 ◽  
Author(s):  
Manabu Ohkubo ◽  
Kumiko Fukai ◽  
Kohji Matsuo ◽  
Nobuyuki Iwata ◽  
Hiroshi Yamamoto
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Kondo Effect ◽  
Metal Target ◽  
Metallic Behavior ◽  
Resistivity Minimum ◽  
Bilayered Film ◽  
Quartz Glasses ◽  
Interface Conduction

ABSTRACTThe Re oxide films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200?C in Ar atmosphere and showed the order of 10-4 Ωcm of which the value was still about 10 times as large as that of a single crystal ReO3. The temperature dependence of the resistivity revealed a metallic behavior. A superconductivity did not take place in the bilayered film of ReO3 / NdBa2Cu3O6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120K.

In situ fixed angle X-ray reflectivity study of sputter-deposited amorphous LaNiO3 thin film on Si substrate

1998 ◽  
Vol 248 (1-4) ◽  
pp. 109-114 ◽  
Author(s):  
Chih-Hao Lee ◽  
Hsin-Yi Lee ◽  
K.S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Fixed Angle ◽  
X Ray ◽  
Sputter Deposited

Study of uniaxial deformation behavior of 50 nm-thick thin film of gold single crystal using in situ X-ray pole figure measurements

2019 ◽  
Vol 377 ◽  
pp. 124878
Author(s):  
J. Drieu La Rochelle ◽  
P. Godard ◽  
C. Mocuta ◽  
D. Thiaudière ◽  
J. Nicolai ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Pole Figure ◽  
Deformation Behavior ◽  
Uniaxial Deformation ◽  
X Ray

Microstructure of YBa2Cu3O7-δ/Ag Bilayers Grown In Situ on Step-Edge SrTiO3 Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
Z. H. Gong ◽  
J. K. Grepstad ◽  
S. Andersen ◽  
A. Bardal
Keyword(s):  
Film Growth ◽  
Ybco Film ◽  
Amorphous Material ◽  
Interfacial Microstructure ◽  
High Density ◽  
Step Edge ◽  
Transmission Electron ◽  
Lattice Images ◽  
Sputter Deposited

AbstractThe microstructure of YBa2Cu3O7-δ(YBCO)/Ag bilayers sputter deposited in situ on step-edge SrTiO3 (STO) substrates, was carefully examined by transmission electron microscopy (TEM). Considerable variation in the YBCO film growth morphology is found near steps, including film protrusions beyond the step edges and film growth on slopes. Lattice images recorded near steps unveil a high density of crystalline defects in the film. An increased density of defects is also found near the substrate interface for film grown on etched STO surface. However, these defects are confined to the interface region and do not propagate beyond the scale of the STO surface roughness. Comparison of TEM lattice images of YBCO(100)/Ag and YBCO(001)/Ag junctions from the same specimen unveils a distinct difference in the interfacial microstructure of those two junctions. Whereas the former exhibits a sharp crystalline interface, the latter typically features a thin ( ∼ 20 Å ) interfacial layer of amorphous material. The YBCO film morphology and the high density of defects in the step edge region uncovered in this study suggest that manufacture of reproducible and uniform YBCO/Ag (Au)/YBCO (SNS) Josephson junctions using the step-edge technique, will prove a difficult task.

Ion Thinning of Electron Transparent Single Crystal Sapphire Substrates

1974 ◽  
Vol 32 ◽  
pp. 468-469
Author(s):  
J. L. Kenty ◽  
R. E. Johnson
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Sapphire Substrates ◽  
Single Crystal Sapphire ◽  
Growth Experiments

Samples of single crystal sapphire (α-Al2O3) have been ion-beam thinned to yield electron transparent regions suitable for use as substrates for in situ thin film growth experiments. Routine fabrication of 1 mm dia. samples containing one or more thin (∼200Å) regions ∼10μm2 in area was possible. The samples were surprisingly robust, many surviving post-thinning subdivision, mounting into a TEM environment cell, and heating to ∼1200°C.

Reactions at the Titanium-Silicon Interface Studied Using Hot-Stage Tem

1992 ◽  
Vol 260 ◽  
Author(s):  
Amol Kirtikar ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Phase Transformations ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Titanium Thin Films ◽  
Sputter Deposited ◽  
Titanium Silicon ◽  
Silicon Interface

ABSTRACTThe interaction of titanium thin films sputter-deposited onto single crystal silicon was studied by in situ heating experiments within the TEM. Reactions at the Ti-Si interface including amorphization, crystallization, allotropie phase transformations and agglomeration have been observed in real time and recorded on videotape. Interpretation of these recordings can yield a wealth of information on the silicidation process.

Interface Conduction between Conductive ReO3 Thin Film and NdBa2Cu3O6 Thin Film

2002 ◽  
Vol 740 ◽  
Author(s):  
Manabu Ohkubo ◽  
Kumiko Fukai ◽  
Kohji Matsuo ◽  
Nobuyuki Iwata ◽  
Hiroshi Yamamoto
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Kondo Effect ◽  
Metal Target ◽  
Metallic Behavior ◽  
Resistivity Minimum ◽  
Bilayered Film ◽  
Quartz Glasses ◽  
Interface Conduction

ABSTRACTThe Re oxide films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200°C in Ar atmosphere and showed the order of 10-4 Ω cm of which the value was still about 10 times as large as that of a single crystal ReO3. The temperature dependence of the resistivity revealed a metallic behavior. A superconductivity did not take place in the bilayered film of ReO3 / NdBa2Cu3O6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120K.

In Situ Infrared Study of the Adsorption and Surface Acid−Base Properties of the Anions of Dicarboxylic Acids at Gold Single Crystal and Thin-Film Electrodes

2007 ◽  
Vol 111 (27) ◽  
pp. 9943-9952 ◽  
Author(s):  
José Manuel Delgado ◽  
Antonio Berná ◽  
José Manuel Orts ◽  
Antonio Rodes ◽  
Juan Miguel Feliu
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Dicarboxylic Acids ◽  
Acid Base ◽  
Infrared Study ◽  
Thin Film Electrodes ◽  
Base Properties
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