How CVD SI/GE Layer Growth is Controlled by Each one of the Reaction gas Components

1992 ◽  
Vol 280 ◽  
Author(s):  
H. Kühne ◽  
G. Kissinger ◽  
P. Zaumseil ◽  
S. Hinrich ◽  
H. Richter
Keyword(s):  
Thin Film ◽  
Hydrogen Chloride ◽  
Film Growth ◽  
Layer Growth ◽  
Thin Film Growth ◽  
Carrier Gas ◽  
Growth Defects ◽  
Density Reduction ◽  
Partial Pressures ◽  
Hydrogen Carrier

ABSTRACTApplying the previously derived “Three-Partial-Rates” model, CVD-Si/Ge-thin film growth and composition is described as influenced by the partial pressures of silane, germane, and hydrogen chloride. The effect of hydrogen carrier gas throughput variation is considered, as well as the density reduction of polycrystalline growth defects by the action of hydrogen chloride and hydrogen.

Numerical Study and Optimization of GaN Thin-Film Growth by MOCVD Method

2013 ◽  
Author(s):  
H. S. Fang ◽  
Y. Y. Pan ◽  
J. A. Wei ◽  
S. Liu ◽  
Z. Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Rotation Rate ◽  
Film Growth ◽  
Numerical Study ◽  
Thin Film Growth ◽  
Organic Chemical ◽  
Inlet Velocity ◽  
Carrier Gas ◽  
Disk Rotation

Light-emitting diode (LED) is considered as the “green light” of the twenty-first century, and the white high-power LED is mainly achieved by the excitation of yellow fluorescent powder with GaN-based blue light. Therefore, the quality of GaN films directly influences the reliability, light efficiency and durability of the Led devices. In the paper, a coupled model has been developed and applied on the simulation of transport phenomena and chemical kinetics during the GaN growth process by a vertical metal-organic chemical vapor deposition (MOCVD) reactor. The effects of the carrier gas type, gas flow rate, and the disk rotation rate on the species distributions, GaN deposition rate and temperature field are investigated. The results indicate that nitrogen is better than hydrogen as carrier gas in consideration of the GaN deposition rate, and that, at the current range of the growth parameters, fast crystal rotation rate and gas inlet velocity are favorable for the large deposition rate and for the improvement of the averaged growth uniformity. However, the edge effect becomes more critical. The results also show that an intermediate gas inlet velocity and a fast disk rotation rate are better conditions from an averaged evaluation of the deposition rate and growth uniformity. The analyses have provided important guide for a practical GaN thin-film growth.

A NEW KINETIC MONTE CARLO METHOD FOR THE THIN FILM GROWTH OF PEROVSKITES

2009 ◽  
Vol 16 (06) ◽  
pp. 909-916 ◽  
Author(s):  
P. PETROV ◽  
W. MILLER
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Monte Carlo Method ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Layer Growth ◽  
Thin Film Growth ◽  
Adsorption Dynamics ◽  
Kinetic Monte Carlo Method ◽  
First Results

We have developed a novel kinetic Monte Carlo method, which simulates the epitaxial growth of oxide films with perovskite structure. First results are presented for two cases of adsorption dynamics for one of the metals — adsorption of single Ti atoms and adsorption of larger particles TiO2 and TiO . For both types of adsorption a two-by-two layer growth was observed. The simulations have been performed for different ratios between the flux of metals and the flux of oxygen.

scholarly journals Thin film growth of heavy fermion chiral magnet YbNi3Al9

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Fermion ◽  
Film Growth ◽  
Thin Film Growth

Radical-triggered cross-linking for molecular layer deposition of SiAlCOH hybrid thin films

2021 ◽  
Author(s):  
Kristina Ashurbekova ◽  
Karina Ashurbekova ◽  
Iva Saric ◽  
Evgeny Modin ◽  
Mladen Petravic ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Molecular Layer ◽  
Thin Film Growth ◽  
Cross Linking ◽  
Layer By Layer ◽  
Molecular Layer Deposition ◽  
Layer Deposition ◽  
Hybrid Thin Films ◽  
Enhanced Stability

We developed a thin film growth with a radical-initiated cross-linking of vinyl groups in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited improved properties like 12% higher density and enhanced stability compared to the non-cross-linked film.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth
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