Strong Polarity and Bond Characterization of Nanostructured Silicon Nitride Solids

1992 ◽  
Vol 286 ◽  
Author(s):  
Lide Zhang ◽  
Chimei Mo ◽  
Tao Wang ◽  
Cunyi Xie

ABSTRACTNanostructured silicon nitride solids (NANO–SSNS) were investigated by x–ray photoelectron spectroscopy (XPS), electron spin resonance (ESR) and dielectric measurements. It is found that the dielectric constant of NANO–SSNS depends strongly on the measuring frequency, f. When f<100Hz, at room temperature it is forty times as much as that of conventional Si3N4. ESR measurements show that a large number of unbinding electrons exist in interfaces. This suggests that the NANO–SSNS possess strong polarity. The study on the bond properties indicates that a large number of unsaturated and dangling bonds exist in interfaces of NANO–SSNS.

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 202
Author(s):  
Miranda Martinez ◽  
Anil R. Chourasia

The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried out at two different substrate temperatures, namely room temperature and 200 °C. The photoelectron spectra of tin and titanium in the samples were found to exhibit significant differences upon comparison with the corresponding elemental and the oxide spectra. These changes result from chemical interaction between SnO2 and the titanium overlayer at the interface. The SnO2 was observed to be reduced to elemental tin while the titanium overlayer was observed to become oxidized. Complete reduction of SnO2 to elemental tin did not occur even for the lowest thickness of the titanium overlayer. The interfaces in both the types of the samples were observed to consist of elemental Sn, SnO2, elemental titanium, TiO2, and Ti-suboxide. The relative percentages of the constituents at the interface have been estimated by curve fitting the spectral data with the corresponding elemental and the oxide spectra. In the 200 °C samples, thermal diffusion of the titanium overlayer was observed. This resulted in the complete oxidation of the titanium overlayer to TiO2 upto a thickness of 0.9 nm of the overlayer. Elemental titanium resulting from the unreacted overlayer was observed to be more in the room temperature samples. The room temperature samples showed variation around 20% for the Ti-suboxide while an increasing trend was observed in the 200 °C samples.


2021 ◽  
Author(s):  
Yuri Mikhlin ◽  
Roman Borisov ◽  
Sergey Vorobyev ◽  
Yevgeny Tomashevich ◽  
Alexander Romanchenko ◽  
...  

Two-dimensional phenomena are attracting enormous interest at present and the search for novel 2D materials is very challenging. We propose here the layered material valleriite composed of altering atomic sheets of Cu-Fe sulfide and Mg-based hydroxide synthesized via a simple hydrothermal pathway as particles of 50-200 nm in the lateral size and 10-20 nm thick. The solid products and aqueous colloids prepared with various precursor ratios were examined using XRD, TEM, EDS, X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), Raman, Mössbauer, UV-vis-NIR spectroscopies, magnetic, dynamic light scattering, zeta potential measurements. The material properties are largely determined by the narrow-gap (less than 0.5 eV) sulfide layers containing Cu+ and Fe3+ cations, monosulfide and minor polysulfide anions but are strongly affected by the hydroxide counterparts. Particularly, Fe distribution between sulfide (55-90%) and magnesium hydroxide layers is controlled through insertion of Al into the hydroxide part and by Cr and Co dopants entering both layers. Room-temperature Mössbauer signals of paramagnetic Fe3+ transformed to several Zeeman sextets with hyperfine magnetic fields up to 500 kOe in the sulfide layers at 4 K. Paramagnetic or more complicated characters were observed for valleriites with higher and lower Fe concentrations in hydroxide sheets, respectively. Valleriite colloids showed negative zeta potentials, suggesting negative electric charging of the hydroxide sheets, and optical absorption maxima between 500 nm and 700 nm, also depended on the Fe distribution. The last features observed also in the REELS spectra may be due to localized surface plasmon or, more likely, quasi-static dielectric resonance. The tunable composition, electronic, magnetic, optic and surface properties highlight valleriites as a rich platform for novel 2D composites promising for numerous applications.


1993 ◽  
Vol 8 (10) ◽  
pp. 2679-2685 ◽  
Author(s):  
P. Moretti ◽  
B. Canut ◽  
S.M.M. Ramos ◽  
R. Brenier ◽  
P. Thévenard ◽  
...  

LiNbO3 single crystals were implanted at room temperature with Eu+ ions at 70 keV with fluence ranging from 0.5 to 5 × 1016 ions · cm−2. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in Eu2+ and Eu3+ states, and the Nb5+ ions are driven to lower charge states.


2013 ◽  
Vol 543 ◽  
pp. 277-280
Author(s):  
Marius Dobromir ◽  
Alina Vasilica Manole ◽  
Simina Rebegea ◽  
Radu Apetrei ◽  
Maria Neagu ◽  
...  

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.


Polymers ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 558
Author(s):  
Wenhui Zhu ◽  
Caiyun Zhang ◽  
Yali Chen ◽  
Qiliang Deng

Photothermal materials are attracting more and more attention. In this research, we synthesized a ferrocene-containing polymer with magnetism and photothermal properties. The resulting polymer was characterized by Fourier-transform infrared (FT-IR), vibrating sample magnetometer (VSM), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and thermogravimetric analysis (TGA). Its photo-thermocatalytic activity was investigated by choosing methylene blue (MB) as a model compound. The degradation percent of MB under an irradiated 808 nm laser reaches 99.5% within 15 min, and the degradation rate is 0.5517 min−1, which is 145 times more than that of room temperature degradation. Under irradiation with simulated sunlight, the degradation rate is 0.0092 min−1, which is approximately 2.5 times more than that of room temperature degradation. The present study may open up a feasible route to degrade organic pollutants.


1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.


2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.


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