Ultrathin Low Energy Simox for Low Cost, High Density Applications

ABSTRACTSilicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.

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Ultrathin Soi Structures by Low Energy Oxygen Implantation

MRS Proceedings ◽

10.1557/proc-235-109 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 9

Author(s):

Fereydoon Namavar ◽

E. Cortesi ◽

B. Buchanan ◽

J. M. Manke ◽

N. M. Kalkhoran

Keyword(s):

Low Energy ◽

Radiation Hardness ◽

Silicon On Insulator ◽

Great Promise ◽

High Quality ◽

Fully Depleted ◽

Device Structures ◽

Ultrathin Soi ◽

Radiation Hard ◽

Standard Energy

ABSTRACTAlthough silicon-on-insulator (SOI) materials made by standard energy (150–200 keV) SIMOX processes have shown great promise for meeting the needs of radiation hard microelectronics, there are still problems relating to the radiation hardness and economic viability of standard SIMOX. A low energy SIMOX (LES) process reduces cost and improves radiation hardness and increased throughput of any implanter because much smaller doses are required. In addition, the process is uniquely able to produce high quality thin SIMOX structures that are of particular interest for fully depleted device structures. In this paper, we address the formation of high quality ultrathin SIMOX structures by low energy implantation.

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On the Formation of Ultrathin Simox Structures by Low Energy Implantation

MRS Proceedings ◽

10.1557/proc-284-567 ◽

1992 ◽

Vol 284 ◽

Cited By ~ 1

Author(s):

F. Namavar ◽

B. Buchanan ◽

N. M. Kalkhoran

Keyword(s):

Integrated Circuits ◽

Substrate Material ◽

Low Energy ◽

Silicon On Insulator ◽

Great Promise ◽

Ultrathin Layers ◽

Commercial Applications ◽

Competitive Substrate ◽

The Cost ◽

Radiation Hard

ABSTRACTSilicon-on-insulator (SOI) wafers made by standard energy (150–200 keV) Separation by IMplantation of Oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. However, if SIMOX material is to become a competitive substrate material for manufacturing commercial integrated circuits, the cost of the SIMOX wafers must be greatly reduced. The low energy SIMOX (LES) process accomplishes the needed reduction in cost by producing ultrathin layers which require much lower ion doses. These ultrathin layers are necessary for the next generation of commercial ultra high density CMOS integrated circuits, and must be of very high quality to be utilized for commercial applications. In this paper we discuss characterization of ultrathin LES structures.

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Nanoprobing of Advanced Silicon-On-Insulator Transistors

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0381 ◽

2019 ◽

Author(s):

Stefano Larentis ◽

Kent Erington ◽

Jose Z. Garcia ◽

Khiem Ly ◽

Kris Dickson ◽

...

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Electrical Characterization ◽

Silicon On Insulator ◽

New Device ◽

Device Structures ◽

Well Leakage ◽

Soi Technology

Abstract As advanced silicon-on-insulator (SOI) technology becomes a more widespread technology offering, failure analysis approaches should be adapted to new device structures. We review two nanoprobing case studies of advanced SOI technology, detailing the electrical characterization of a compound gate-to-drain defect as well as the characterization of unexpected SOI source-to-well leakage.

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