On the Formation of Ultrathin Simox Structures by Low Energy Implantation

1992 ◽  
Vol 284 ◽  
Author(s):  
F. Namavar ◽  
B. Buchanan ◽  
N. M. Kalkhoran
Keyword(s):  
Integrated Circuits ◽  
Substrate Material ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Great Promise ◽  
Ultrathin Layers ◽  
Commercial Applications ◽  
Competitive Substrate ◽  
The Cost ◽  
Radiation Hard

ABSTRACTSilicon-on-insulator (SOI) wafers made by standard energy (150–200 keV) Separation by IMplantation of Oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. However, if SIMOX material is to become a competitive substrate material for manufacturing commercial integrated circuits, the cost of the SIMOX wafers must be greatly reduced. The low energy SIMOX (LES) process accomplishes the needed reduction in cost by producing ultrathin layers which require much lower ion doses. These ultrathin layers are necessary for the next generation of commercial ultra high density CMOS integrated circuits, and must be of very high quality to be utilized for commercial applications. In this paper we discuss characterization of ultrathin LES structures.

Ultrathin Low Energy Simox for Low Cost, High Density Applications

1993 ◽  
Vol 316 ◽  
Author(s):  
Fereydoon Namavar ◽  
N.M. Kalkhoran ◽  
A. Cremins
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Great Promise ◽  
Fully Depleted ◽  
Device Structures ◽  
Radiation Hard ◽  
Standard Energy

ABSTRACTSilicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.

Ultrathin Soi Structures by Low Energy Oxygen Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Fereydoon Namavar ◽  
E. Cortesi ◽  
B. Buchanan ◽  
J. M. Manke ◽  
N. M. Kalkhoran
Keyword(s):  
Low Energy ◽  
Radiation Hardness ◽  
Silicon On Insulator ◽  
Great Promise ◽  
High Quality ◽  
Fully Depleted ◽  
Device Structures ◽  
Ultrathin Soi ◽  
Radiation Hard ◽  
Standard Energy

ABSTRACTAlthough silicon-on-insulator (SOI) materials made by standard energy (150–200 keV) SIMOX processes have shown great promise for meeting the needs of radiation hard microelectronics, there are still problems relating to the radiation hardness and economic viability of standard SIMOX. A low energy SIMOX (LES) process reduces cost and improves radiation hardness and increased throughput of any implanter because much smaller doses are required. In addition, the process is uniquely able to produce high quality thin SIMOX structures that are of particular interest for fully depleted device structures. In this paper, we address the formation of high quality ultrathin SIMOX structures by low energy implantation.

Silicon-on-lnsulator Technology: Past Achievements and Future Prospects

MRS Bulletin ◽  
1998 ◽  
Vol 23 (12) ◽  
pp. 16-19 ◽  
Author(s):  
Jean-Pierre Colinge
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Low Voltage ◽  
Current Drive ◽  
Silicon On Insulator ◽  
Current Gain ◽  
Silicon Devices ◽  
Microelectronics Industry ◽  
Radiation Hard ◽  
Soi Technology

In silicon-on-insulator (SOI) technology, devices are dielectrically insulated from one another—usually by silicon dioxide. Unlike in conventional silicon devices, there is no direct contact between a transistor and the silicon substrate. The advantages of this type of isolation are many: reduced parasitic capacitances and reduced crosstalk between devices, improved current drive, subthreshold characteristics, and current gain. Silicon-on-insulator devices have been and are being used in several niche-market applications such as hightemperature and radiation-hard integrated circuits. However most importantly, SOI technology seems perfectly adapted to the needs of low-voltage, low-power (LVLP) electronic circuits. Because of the growing market for portable systems, LVLP technology is bound to soon become one of the drivers of the microelectronics industry, and SOI is likely to be part of it. Moreover major companies such as IBM, Sharp, Motorola, and Peregrine have announced upcoming lowpower and high-frequency lines of SOI products. The goal of this article is to introduce the reader to the basics of SOI device physics and the integrated-circuit applications of SOI.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An Overview of 300 mm SOI Starting Wafer Quality and Its Yield Detractors

2005 ◽  
Author(s):  
Pei Y. Tsai ◽  
Junedong Lee ◽  
Paul Ronsheim ◽  
Lindsay Burns ◽  
Richard Murphy ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Device Fabrication ◽  
Sampling Plan ◽  
Silicon On Insulator ◽  
Manufacturing Processes ◽  
Circuit Performance ◽  
Characterization Techniques ◽  
Wafer Manufacturing

Abstract A stringent sampling plan is developed to monitor and improve the quality of 300mm SOI (silicon on insulator) starting wafers procured from the suppliers. The ultimate goal is to obtain the defect free wafers for device fabrication and increase yield and circuit performance of the semiconductor integrated circuits. This paper presents various characterization techniques for QC monitor and examples of the typical defects attributed to wafer manufacturing processes.

Top-down Fabricated Gold Nanostrip on Silicon-on-insulator Wafer: A Promising Building Block towards Ultra-compact Optical Device

Nanoscale ◽  
2020 ◽  
Author(s):  
Fuping Zhang ◽  
Weikang Liu ◽  
Li Chen ◽  
Zhiqiang Guan ◽  
Hongxing Xu
Keyword(s):  
Optical Communication ◽  
Data Transmission ◽  
Building Block ◽  
High Speed ◽  
Large Data ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Fundamental Building Block ◽  
Low Energy Consumption ◽  
Controllable Fabrication

he plasmonic waveguide is the fundamental building block for high speed, large data transmission capacity, low energy consumption optical communication and sensing. Controllable fabrication and simultaneously optimization of the propagation...

scholarly journals Longevity of Raw and Lyophilized Crude Urease Extracts

2021 ◽  
Vol 2 (2) ◽  
pp. 325-334
Author(s):  
Neda Javadi ◽  
Hamed Khodadadi Tirkolaei ◽  
Nasser Hamdan ◽  
Edward Kavazanjian
Keyword(s):  
Crude Extract ◽  
Room Temperature ◽  
Low Cost ◽  
Extraction Process ◽  
Crude Extracts ◽  
Simple Extraction ◽  
Commercial Applications ◽  
Stable Source ◽  
The Stability ◽  
The Cost

The stability (longevity of activity) of three crude urease extracts was evaluated in a laboratory study as part of an effort to reduce the cost of urease for applications that do not require high purity enzyme. A low-cost, stable source of urease will greatly facilitate engineering applications of urease such as biocementation of soil. Inexpensive crude extracts of urease have been shown to be effective at hydrolyzing urea for carbonate precipitation. However, some studies have suggested that the activity of a crude extract may decrease with time, limiting the potential for its mass production for commercial applications. The stability of crude urease extracts shown to be effective for biocementation was studied. The crude extracts were obtained from jack beans via a simple extraction process, stored at room temperature and at 4 ℃, and periodically tested to evaluate their stability. To facilitate storage and transportation of the extracted enzyme, the longevity of the enzyme following freeze drying (lyophilization) to reduce the crude extract to a powder and subsequent re-hydration into an aqueous solution was evaluated. In an attempt to improve the shelf life of the lyophilized extract, dextran and sucrose were added during lyophilization. The stability of purified commercial urease following rehydration was also investigated. Results of the laboratory tests showed that the lyophilized crude extract maintained its activity during storage more effectively than either the crude extract solution or the rehydrated commercial urease. While incorporating 2% dextran (w/v) prior to lyophilization of the crude extract increased the overall enzymatic activity, it did not enhance the stability of the urease during storage.

scholarly journals The UV fate of anomalous U(1)s and the Swampland

2020 ◽  
Vol 2020 (11) ◽  
Author(s):  
Nathaniel Craig ◽  
Isabel Garcia Garcia ◽  
Graham D. Kribs
Keyword(s):  
Quantum Gravity ◽  
Gauge Theories ◽  
Critical Size ◽  
Gauge Coupling ◽  
Low Energy ◽  
Gravitational Anomaly ◽  
Light Vector ◽  
Energy Theory ◽  
The Cost ◽  
Weak Gravity

Abstract Massive U(1) gauge theories featuring parametrically light vectors are suspected to belong in the Swampland of consistent EFTs that cannot be embedded into a theory of quantum gravity. We study four-dimensional, chiral U(1) gauge theories that appear anomalous over a range of energies up to the scale of anomaly-cancelling massive chiral fermions. We show that such theories must be UV-completed at a finite cutoff below which a radial mode must appear, and cannot be decoupled — a Stückelberg limit does not exist. When the infrared fermion spectrum contains a mixed U(1)-gravitational anomaly, this class of theories provides a toy model of a boundary into the Swampland, for sufficiently small values of the vector mass. In this context, we show that the limit of a parametrically light vector comes at the cost of a quantum gravity scale that lies parametrically below MP1, and our result provides field theoretic evidence for the existence of a Swampland of EFTs that is disconnected from the subset of theories compatible with a gravitational UV-completion. Moreover, when the low energy theory also contains a U(1)3 anomaly, the Weak Gravity Conjecture scale makes an appearance in the form of a quantum gravity cutoff for values of the gauge coupling above a certain critical size.

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