STEM characterization of short - Period GaAs-GaP strained superlattices

1990 ◽  
Vol 48 (4) ◽  
pp. 596-597
Author(s):  
C. Ballesteros ◽  
J. Piqueras ◽  
H. Laknerb ◽  
B. Bollig ◽  
A. Ruiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Interesting Case ◽  
Misfit Dislocations ◽  
Group V ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Short Period ◽  
Short Period Superlattices ◽  
The Difference

In the epitaxial growth of superlattice (SL) structures composed of non lattice-matched materials a large difference in the lattice constants of the components could result in the formation of misfit dislocations at the interfaces. However, high quality structures can be obtained when the thickness of the layers are kept below a critical value and the difference is elastically accomodated by strain. In particular GaAs-GaP short period superlattices (3.7% mismatch) constitute an interesting case of strained SLS because the stress related shifts of the electronic levels can result in novel optical and electronic properties. In the present work the quality of GaAs-GaP SLS is studied by STEM.Short period GaAs-GaP superlattices were grown on SI (001) GaAs substrates by Atomic Layer Molecular Beam Epitaxy a new modification of the MBE technique capable of a sharp modulation of both group III and group V sources. To study the possibility of using the GaAs-GaP system for SL and Quantum Well structures a 18 monolayer thick GaAs quantum well was confined by two GaAs-GaP superlattices.

scholarly journals High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

1993 ◽  
Vol 84 (3) ◽  
pp. 475-489
Author(s):  
G. Bauer ◽  
E. Koppensteiner ◽  
P. Hamberger ◽  
J. Nützel ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices

Photoluminescence Fatigue in Laterally-Ordered (GaP)2/(InP)2 Short-Period-Superlattices (SPS) Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 325 ◽  
Author(s):  
X. C. Liu ◽  
S. Q. Gu ◽  
E. E. Reuter ◽  
S. G. Bishop ◽  
A. C. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Lower Energy ◽  
Molecular Beam ◽  
Continuous Illumination ◽  
Exciting Light ◽  
Quantum Well Structures ◽  
Short Period ◽  
Short Period Superlattices

AbstractSpontaneously laterally ordered (GaP)2/(InP)2 short period superlattices (SPS) grown by Molecular Beam Epitaxy (MBE) on nominal (100) GaAs substrates have been studied by photoluminescence (PL) spectroscopy. The samples studied included SPS comprising 110 pairs of (GaP)2/(InP)2 (total thickness σ90 nm) and multiquantum well structures in which quantum wells comprising 12 pairs of (GaP)2/(InP)2 SPS layers (thickness σ10 nm) are alternated with lattice-matched GaInP random alloy barrier layers. The 5K PL spectra include a σ1760 meV nearband edge band, and a much broader, lower energy (σ1670 meV) luminescence band that exhibits an unusual fatiguing behavior; its intensity diminishes monotonically during continuous illumination by the exciting light. This fatigued PL state is metastable at low temperatures. In the quantum well structure, although the relative intensity of the lower energy band is significantly weaker in comparison to the higher one, the fatiguing behavior still exists. However the fatiguing rate is slower in quantum well structures than that observed in the thick SPS film.

In Situ Flux Transient Monitoring and Correction During MBE Growth of Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
F. G. Celii ◽  
Y.-C. Kao ◽  
A. J. Katz
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Effusion Cell ◽  
Multiple Quantum ◽  
Group V ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Tunneling Diode ◽  
Partial Pressures

ABSTRACTShutter closure during MBE deposition causes source overheating and results in flux transients. These transients are particularly detrimental to the thickness and compositional accuracy of thin quantum well layers. In this paper, we document the effects of flux transients on growth of multiple quantum well (MQW) and resonant tunneling diode (RTD) structures, and demonstrate rudimentary transient correction by employing real-time flux detection.Reflection mass spectrometry (REMS) provides a convenient in situ method for MBE flux monitoring. The Group III partial pressures can be detected in the presence of Group V overpressure, and REMS is compatible with wafer rotation. We used REMS to characterize In, Al and Ga flux transients as a function of shutter closed time, cell flux and substrate temperature. Overshoot magnitudes up to 30% were observed. We verified the correspondence of REMS signal transients and effusion cell flux transients using GaAs/AlGaAs and InGaAs/lnAlAs MQW and test structures. We also successfully demonstrated flux transient correction by cell temperature ramping during MQW and RTD growth.

Growth of InAs and (InAs)1(GaAs)l Superlattice Quantum Well Structures on GaAs by Atomic Layer Epitaxy Using Trimethylindium-Dimethylethylamine Adduct

1993 ◽  
Vol 334 ◽  
Author(s):  
Nobuyuki Ohtsuka ◽  
Osamu Ueda
Keyword(s):  
Quantum Well ◽  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
High Thermal Stability ◽  
Atomic Layer Epitaxy ◽  
Quantum Well Structures ◽  
Temperature Range ◽  
Short Period ◽  
Thermal Stability Of

AbstractAtomic layer epitaxy (ALE) of InAs has been developed using trimethylindium-dimethylethylamine adduct (TMIDMEA) as a novel In source. Distinct self-limiting growth of InAs was successfully carried out over a wide temperature range from 350°C to 500°C because of the high thermal stability of TMIDMEA. The possible growth temperature range for ALE-InAs was extended by using TM1DMEA. These results lead us to conclude that the use of TMIDMEA enables us to grow InAs/GaAs heterostructures at a single growth temperature. Using this technique, (InAs)1(GaAs)l short period superlattice (12 periods) quantum-well structures were grown on a GaAs(100) substrate at 460°C. A photoluminescence peak at 1.3 µm was observed in these structures at room temperature.

Channeling defects in group-III nitrides during dry etching processes

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
J.T. Hsieh ◽  
B. Kuhn ◽  
F. Scholz ◽  
H. Schweizer
Keyword(s):  
Quantum Well ◽  
Incidence Angle ◽  
Ion Beam ◽  
Energy Shift ◽  
Group Iii Nitrides ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Ion Channeling ◽  
Before And After ◽  
Gan Heterostructure

ABSTRACTThe effects of Ar+ ion beam etching (IBE) of AlGaN/GaN heterostructures and GaN/InGaN/GaN quantum well structures were investigated dependent on different ion incidence angles. The AlGaN/GaN heterostructure was measured before and after etching with respect to mobility and sheet resistance. The InGaN quantum well structure was measured with PL to determine the PL intensity and the energy shift, respectively. This experiments show that ion channeling is a significant defect generation phenomena in group- III nitrides at vertical ion incidence angle and can be minimized by tilting the sample against the ion beam.

Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers

2002 ◽  
Vol 92 (8) ◽  
pp. 4330-4335 ◽  
Author(s):  
J. H. Teng ◽  
J. R. Dong ◽  
S. J. Chua ◽  
M. Y. Lai ◽  
B. C. Foo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Tunable Lasers ◽  
Group V ◽  
Quantum Well Structures
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