In Situ Ellipsometric Study of the Dependence of a-Si:H Film Growth on Substrate Properties and Ignition Procedures

1994 ◽  
Vol 336 ◽  
Author(s):  
U.I. Schmidt ◽  
W. Herbst ◽  
B. Schröder ◽  
H. Oechsner
Keyword(s):  
Film Growth ◽  
Particle Formation ◽  
Soft Start ◽  
Bulk Film ◽  
Layer Deposition ◽  
Special Power ◽  
Substrate Properties ◽  
Ellipsometric Study ◽  
Quality Material

ABSTRACTIn situ ellipsometry reveals that particle formation influences the growth of glow discharge a-Si:H. This particle formation is observed even under discharge conditions leading to the deposition of device quality Material. It is found that less dense material is deposited during the particle-induced initial transient stage of the discharge which influences the properties of the subsequently growing “bulk” film. The effect of special power gradient ignition procedures is discussed. A significant increase of solar cell efficency is achieved by choosing “soft” start conditions for the i-layer deposition.

In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition

2011 ◽  
Vol 11 (2) ◽  
pp. 1577-1580 ◽  
Author(s):  
Yong Jun Park ◽  
Dong Ryeol Lee ◽  
Hyun Hwi Lee ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Scattering Study

Dynamic in situ spectroscopic ellipsometric study in inhomogeneous TiO2 thin-film growth

2010 ◽  
Vol 108 (1) ◽  
pp. 013522 ◽  
Author(s):  
M. Horprathum ◽  
P. Chindaudom ◽  
P. Limnonthakul ◽  
P. Eiamchai ◽  
N. Nuntawong ◽  
...  
Keyword(s):  
Thin Film ◽  
Tio2 Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Ellipsometric Study

Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Single Element ◽  
Transmission Electron ◽  
Layer Deposition

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

In situ XPS investigation about the growth of the first atomic layer of Ta(N) films deposited by thermal TBTDET ALD

2008 ◽  
Vol 1146 ◽  
Author(s):  
Steffen Strehle ◽  
Daniela Schmidt ◽  
Sebastian Gutsch ◽  
Martin Knaut ◽  
Matthias Albert ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Film Growth ◽  
Atomic Layer ◽  
Building Blocks ◽  
Silicon Surfaces ◽  
Layer Deposition ◽  
Etched Silicon ◽  
Reaction Cycles ◽  
Crucial Parameter

AbstractTa based films are important building blocks for modern microelectronic applications. To meet the requirements of miniaturization, atomic layer deposition appears to be an alternative technology in comparison to PVD and CVD. In the present paper investigations of a thermal TBTDET ALD process will be presented with emphasis to the first ALD reaction cycles on native silicon oxide and HF etched silicon surfaces. The investigations show that the substrate chemistry is a crucial parameter for the film growth and appears to be a key to control the ALD deposition. The investigations were done by XPS without any vacuum break between the deposition and the surface analysis.

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