scholarly journals Oxidation of Silicon Implanted with High-Dose Aluminum

1994 ◽  
Vol 354 ◽  
Author(s):  
Zunde Yang ◽  
Honghua Du ◽  
Stephen P. Withrow
Keyword(s):  
Oxidation Rate ◽  
Surface Region ◽  
High Dose ◽  
Cross Sectional ◽  
X Ray ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Doses

AbstractSi (100) wafers were implanted with Al at 500°C to high doses at multi-energies and were oxidized in 1 atm flowing oxygen at 1000°–1200°C. The morphology, structure, and oxidation behavior of the implanted and oxidized Si were studied using optical microscopy, atomic force microscopy, and cross-sectional transmission electron microscopy in conjunction with selected area electron diffraction and energy dispersive x-ray analysis. Large Al precipitates were formed and embedded near the surface region of the implanted Si. The oxidation rate of the Al-implanted Si wafers was lower than that of virgin Si. The unique morphology of the implanted Si results from rapid Al diffusion and segregation promoted by hot implantation. The reduction of the oxidation rate of Si by Al implantation is attributed to the preferential oxidation of Al and formation of a continuous difiusion barrier of Al2O3.

Structure of Carrot Defects in 4H-SiC Epilayers

2006 ◽  
Vol 527-529 ◽  
pp. 327-332 ◽  
Author(s):  
X. Zhang ◽  
Seo Young Ha ◽  
M. Benamara ◽  
Marek Skowronski ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Basal Plane ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Force Microscopy ◽  
Carrier Recombination ◽  
Atomic Force ◽  
Transmission Electron ◽  
Homoepitaxial Layers ◽  
Koh Etching

Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional transmission x-ray topography, cross-sectional transmission electron microscopy, atomic force microscopy, and KOH etching. The carrot defects nucleate at the substrate/epilayer interface at the emergence points of threading screw dislocations propagating from the substrate. The typical defect consists of two stacking faults: one in the prismatic plane with second one in the basal plane. The faults are connected by a stair-rod dislocation with Burgers vector 1/n[10-10] with n>3 at the cross-over. The basal plane fault is of Frank-type. Carrot defects are electrically active as evidenced by contrast in EBIC images indicating enhanced carrier recombination rate. Presence of carrot defects in the p-i-n diodes results in higher pre-breakdown reverse leakage current and approximately 50% lower breakdown voltage compared to the nominal value.

scholarly journals Non-Destructive Characterization of Porous Silicon Using X-Ray Reflectivity

1994 ◽  
Vol 358 ◽  
Author(s):  
E. Chason ◽  
T.R. Guilinger ◽  
M.J. Kelly ◽  
T.J. Headley ◽  
A.J. Howard
Keyword(s):  
Porous Silicon ◽  
Film Growth ◽  
Interface Roughness ◽  
Electrochemical Anodization ◽  
Cross Sectional ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Constant Rate

ABSTRACTUnderstanding the evolution of porous silicon (PS) layers at the early stages of growth is important for determining the mechanism of PS film growth and controlling the film properties. We have used X-ray reflectivity (XRR) to determine the evolution of layer thickness and interfacial roughness during the growth of thin PS layers (< 200 nm) prepared by electrochemical anodization. The porous layer grows at a constant rate for films as thin as 15 nm indicating a very short incubation period during which the surface may be electropolished before the PS structure begins to form. Interface roughness measurements indicate that the top surface of the film remains relatively smooth during growth while the roughness of the PS/silicon interface increases only slightly with film thickness. The XRR results are compared with results obtained from the same films by cross-sectional transmission electron microscopy (XTEM), atomic force microscopy (AFM) and gravimetry.

Microstructure and Physical Properties of Ferroelectric-gate Memory Capacitors with Various Buffer Layers

2001 ◽  
Vol 666 ◽  
Author(s):  
Christine Caragianis-Broadbridge ◽  
Jin-ping Han ◽  
T. P. Ma ◽  
Ann Hein Lehman ◽  
Wenjuan Zhu ◽  
...  
Keyword(s):  
Physical Properties ◽  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Buffer Layers ◽  
Cross Sectional ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTThis paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi2Ta2O9(SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current- voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire

1999 ◽  
Vol 572 ◽  
Author(s):  
P. Fini ◽  
H. Marchand ◽  
J. P. Ibbetson ◽  
B. Moran ◽  
L. Zhao ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Crystallographic Tilt

ABSTRACTWe demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed 'maskless' LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 μm) GaN layer on sapphire is selectively dry etched, leaving ∼5 μm-wide stripe mesas oriented in the <1010>GaN direction, with a 20 μm period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a ‘T’, or overhang, morphology. As for LEO over an SiO2 mask, significant defect reduction (from ∼109 cm−2 to ∼106 cm−2 ) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle (∼0.4 – 0.5°) is relatively independent of growth temperature and wing aspect ratio.

Curcumin delivery by modified biosourced carbon-based nanoparticles

Nanomedicine ◽  
2022 ◽  
Author(s):  
Hossein Danafar ◽  
Marziyeh Salehiabar ◽  
Murat Barsbay ◽  
Hossein Rahimi ◽  
Mohammadreza Ghaffarlou ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Free System ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Good Biocompatibility ◽  
Drug Free ◽  
Mcf 7 ◽  
Carbon Based

Aim: To prepare a novel hybrid system for the controlled release and delivery of curcumin (CUR). Methods: A method for the ultrasound-assisted fabrication of protein-modified nanosized graphene oxide-like carbon-based nanoparticles (CBNPs) was developed. After being modified with bovine serum albumin (BSA), CUR was loaded onto the synthesized hybrid (labeled CBNPs@BSA–CUR). The structure and properties of the synthesized nanoparticles were elucidated using transmission electron microscopy (TEM), atomic force microscopy (AFM), ultraviolet-visible spectroscopy (UV-Vis), Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) methods. Results: CBNPs@BSA–CUR showed pH sensitivity and were calculated as controlled CUR release behavior. The drug-free system exhibited good biocompatibility and was nontoxic. However, CBNPs@BSA–CUR showed acceptable antiproliferative ability against MCF-7 breast cancer cells. Conclusion: CBNPs@BSA–CUR could be considered a highly promising nontoxic nanocarrier for the delivery of CUR with good biosafety.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Evaluation of the Strain Field Inside and Around Growth Islands by Means of X-Ray Diffuse Scattering

1999 ◽  
Vol 583 ◽  
Author(s):  
Martin Schmidbauer ◽  
Thomas Wiebach ◽  
Helmut Raidt ◽  
Peter Schäfer ◽  
Michael hanke ◽  
...  
Keyword(s):  
Strain Field ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Abrupt Increase ◽  
X Ray ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Transmission Electron ◽  
Highly Strained

AbstractThe strain distribution inside and in the vicinity of coherently strained self-organized islands has been investigated by high-resolution x-ray diffraction (HRXRD). Finite element method (FEM) calculations were carried out in order to calculate the strain field, which was then used to simulate x-ray reciprocal space maps on the basis of kinematical scattering theory. For Si0 75Ge0.25 islands an abrupt increase in the Ge-concentration at about one third of the island height has been found. This behavior can be attributed to different nucleation stages during growth. Highly strained buried CdSe quantum dots (QDs) strongly influence the surrounding ZnSe matrix. From reciprocal space maps and FEM simulations we were able to estimate the shape and size of the islands. The results are in agreement with transmission electron microscopy (TEM) and UHV atomic force microscopy (AFM) data.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

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