Ion-Beam Polishing of Diamond Thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Thin Films ◽  
Oxygen Plasma ◽  
Electron Cyclotron Resonance ◽  
Incident Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Diamond Films ◽  
Film Surface ◽  
Chemical Vapor ◽  
Diamond Thin Films

AbstractPlanarization of diamond thin films has been carried out using a remote electron cyclotron resonance (ECR) oxygen plasma under a negative bias. Diamond thin films were synthesized by hot filament chemical vapor deposition (HFCVD). The surface roughness (RJ of the diamond films could be considerably reduced from 0.2 μπι to 0.05 μπι using the ECR oxygen plasma. Low planarization and a high etching rate of diamond films were observed for an incident angle of the ion beam to the film surface normal below 45 degrees. High applied bias above -600 V caused secondary discharge effects, resulting in inhomogeneous etching. With an increase in incident angle, needlelike morphology was observed in the diamond film.

Intra- and Intergranular Fracture of Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
H. A. Hoff ◽  
A. A. Morrish ◽  
W. A. Carrington ◽  
J. E. Butler ◽  
B. B. Rath
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Relative Strength ◽  
Ambient Atmosphere ◽  
Transmission Electron ◽  
Welding Torch ◽  
Diamond Thin Films ◽  
Inherent Strength

ABSTRACTDiamond thin films have been synthesized at low pressures by chemical vapor deposition (CVD) and, recently, at ambient atmosphere with an oxygen-acetylene welding torch. By the application of appropriate thermal or mechanical stresses to the substrate, the diamond films can be delaminated. The delaminated films which are only a few microns thick have been fractured by manual bending. Scanning electron microscopy (SEM) examination of fractured CVD diamond films shows the presence of primarily intragranular fracture attesting to the inherent strength of the films. Using transmission electron microscopy (TEM), twinning and stacking faults are seen within the crystallites of the films along the fracture surfaces. By combining SEM and TEM examination, the relative degree of intragranular fracture found in films synthesized by both CVD and oxygen-acetylene torch has been investigated. Possible mechanisms for the intragranular fracture and the relative strength of such films are discussed.

Remote Ecr Plasma Deposition of Diamond Thin Films from Water-Methanol Mixtures

1992 ◽  
Vol 242 ◽  
Author(s):  
R. K. Singh ◽  
D. Gilbert ◽  
R. Tellshow ◽  
R. Koba ◽  
R. Ochoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Cyclotron Resonance ◽  
Plasma Deposition ◽  
Diamond Films ◽  
Processing Parameters ◽  
Gas Composition ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Diamond Thin Films ◽  
Bonding Characteristics

ABSTRACTWe have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.

CHARACTERISTICS OF HF CVD DIAMOND THIN FILMS ON CEMENTED CARBIDES

2007 ◽  
Vol 14 (03) ◽  
pp. 451-459
Author(s):  
LIU SHA
Keyword(s):  
Thin Films ◽  
Raman Spectrum ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Quality ◽  
Etching Depth ◽  
Grain Sizes ◽  
Diamond Thin Films

Diamond films were deposited on the WC/Co alloy substrates by a hot-filament chemical vapor deposition (HF CVD) reactor after the substrate surfaces were chemically pretreated with the two-step etching method. Some characteristics as morphology, texture, adhesion, and chemical quality of the diamond coatings on WC/Co alloy substrates were investigated by means of X-ray diffractometer (XRD), scanning electron microscope (SEM), hardness tester, and Raman spectrum. The results indicate that increasing the Co content from 0.12% to 3.22% within the etching depth of 5–10 μm caused a morphology transformation from prism diamond to spherical diamond, and a texture one from a {111} orientation to a {110} orientation. The Raman spectrum shows that the spherical diamond film contains more non-diamond phases (graphite, amorphous carbon, diamond-like carbon, etc.) and has lower chemical quality of diamond films. The diamond coated grain sizes became about four to five times smaller when the deposition temperatures on the substrate surface were reduced from 900°C to 800°C. Compared with the spherical diamond films, the prism diamond films exhibit better adhesion on the WC–Co substrates. It is also observed that the microcrystalline orientation diamond thin films with grain sizes of 1–3 μm on WC–Co substrate were formed under the circumstances of lower deposition temperature and higher gas pressure, and the microcrystalline growth mechanism of diamond thin films with a preferential orientation on WC/Co alloy is discussed.

Amorphous Silicon Precipitates in (100) c-SI Films Grown by ECRCVD

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Birkholz ◽  
J. Platen ◽  
I. Sieber ◽  
W. Bohne ◽  
J. Röhrich ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Depth Profiling ◽  
Film Surface ◽  
Chemical Vapor ◽  
Elastic Recoil ◽  
Pronounced Increase ◽  
Detection Analysis ◽  
Si Films

AbstractSilicon films were grown on (100) n-Si with an electron-cyclotron resonance chemical vapor deposition (ECRCVD) system by decomposition of SiH4 at 325°C. Structure and composition of thin films were investigated by SEM, Raman spectroscopy, elastic recoil detection analysis (ERDA) and TEM. Excellent epitaxial growth was achieved for some hundred nm thickness. For more than 1 μm thick films, however, SEM revealed the occurrence of conical structures orientated upside-down with their basal plane in the film surface. Depth-profiling of the elemental composition of thin films by means of ERDA showed the hydrogen content CH to exhibit a pronounced increase with increasing film thickness. Raman spectroscopy evidenced the coexistence of c-Si and a-Si:H by the occurrence of two bands at 520 and 480 cm-1, the ratio of which was found to depend sensitively upon the position of the laser spot on the sample. All experimental results could be consistently explained by assuming the conical precipitates to consist of a-Si:H which was finally proven by coherent electron beam diffraction (CEBD).

Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition

2016 ◽  
Vol 15 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Hideyuki Watanabe ◽  
Hitoshi Umezawa ◽  
Toyofumi Ishikawa ◽  
Kazuki Kaneko ◽  
Shinichi Shikata ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers ◽  
Diamond Thin Films

scholarly journals Synthesis of diamond thin films by atmospheric-pressure thermal chemical vapor deposition and their characterization.

Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Diamond Thin Films

Substrate Dependence of Microcrystalline Silicon Growth with SiH4 Diluted by Ar

2014 ◽  
Vol 936 ◽  
pp. 264-268
Author(s):  
Hua Cheng ◽  
Yong Chan Qian ◽  
Jun Xue
Keyword(s):  
Deposition Rate ◽  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Gaseous Mixture ◽  
Film Surface ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Initial Stage ◽  
Substrate Dependence ◽  
Si Films

Microcrystalline Si films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using Ar diluted SiH4gaseous mixture. The effects of the substrate on deposition rate, preferred orientation and roughness of the films were investigated. The results show that, the influence of the substrate surface chemical nature on the deposition rate is significant in the initial stage of the growth. And considering the crystallinity and roughness of the films, the substrate is favored in its preferred orientation with a rougher surface. Based on these results, it is confirmed that the combination of diffusion and etching is indispensable to describe the deposition of μc-Si with SiH4diluted by Ar, and the mechanism of μc-Si growth could be controlled by diffusion of Si and etching of the Ar+on the film surface.

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

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