Intra- and Intergranular Fracture of Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
H. A. Hoff ◽  
A. A. Morrish ◽  
W. A. Carrington ◽  
J. E. Butler ◽  
B. B. Rath
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Relative Strength ◽  
Ambient Atmosphere ◽  
Transmission Electron ◽  
Welding Torch ◽  
Diamond Thin Films ◽  
Inherent Strength

ABSTRACTDiamond thin films have been synthesized at low pressures by chemical vapor deposition (CVD) and, recently, at ambient atmosphere with an oxygen-acetylene welding torch. By the application of appropriate thermal or mechanical stresses to the substrate, the diamond films can be delaminated. The delaminated films which are only a few microns thick have been fractured by manual bending. Scanning electron microscopy (SEM) examination of fractured CVD diamond films shows the presence of primarily intragranular fracture attesting to the inherent strength of the films. Using transmission electron microscopy (TEM), twinning and stacking faults are seen within the crystallites of the films along the fracture surfaces. By combining SEM and TEM examination, the relative degree of intragranular fracture found in films synthesized by both CVD and oxygen-acetylene torch has been investigated. Possible mechanisms for the intragranular fracture and the relative strength of such films are discussed.

Comparative fractography of chemical vapor and combustion deposited diamond films

1990 ◽  
Vol 5 (11) ◽  
pp. 2572-2588 ◽  
Author(s):  
H. A. Hoff ◽  
A. A. Morrish ◽  
J. E. Butler ◽  
B. B. Rath
Keyword(s):  
Electron Microscopy ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Ambient Atmosphere ◽  
Transmission Electron ◽  
Controlled Environments ◽  
Inherent Strength ◽  
Low Pressures

Polycrystalline diamond films of several thicknesses have been fractured by manual bending and examined by scanning electron microscopy. These films have been deposited in controlled environments at low pressures by chemical vapor deposition and in ambient atmosphere with an oxygen-acetylene torch. Fracture surfaces in the low pressure depositions exhibit cleavage steps across the grains. These surfaces, independent of thickness, are primarily transgranular, attesting to the inherent strength of the deposits. However, the ambient deposited diamond has primarily intergranular fracture indicative of weak grain boundaries. Internal defects, observed with transmission electron microscopy, such as twins, stacking faults, and dislocations, occur generally in both types of deposition with no apparent preference for location or type of deposition.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

MOCVD Route to the Fabrication of Calcium Copper Titanate (CaCu3Ti4O12) Thin Films

2006 ◽  
Vol 45 ◽  
pp. 1194-1199
Author(s):  
Raffaella Lo Nigro ◽  
Roberta G. Toro ◽  
Graziella Malandrino ◽  
Ignazio L. Fragalà
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Molten Mixture ◽  
Calcium Copper Titanate ◽  
Novel Approach ◽  
Transmission Electron ◽  
Metal Organic

CaCu3Ti4O12 (CCTO) thin films have been successfully deposited by Metal Organic Chemical Vapor Deposition (MOCVD) technique. A novel approach based on a molten multicomponent precursor source has been applied. The molten mixture consists of the Ca(hfa)2•tetraglyme, Ti(tmhd)2(O-iPr)2, and Cu(tmhd)2 [Hhfa= 1,1,1,5,5,5-hexafluoro-2,4- pentanedione; tetraglyme= 2,5,8,11,14-pentaoxapentadecane; Htmhd= 2,2,6,6-tetramethyl-3,5- heptandione; O-iPr= iso-propoxide] precursors. Film complete structural and morphological characterizations have been carried out using several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)].

Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

1994 ◽  
Vol 357 ◽  
Author(s):  
Jie Yang ◽  
Zhangda Lin ◽  
Li-Xin Wang ◽  
Sing Jin ◽  
Ze Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

Heteroepitaxy of diamond on c-BN: Growth mechanisms and defect characterization

1994 ◽  
Vol 9 (7) ◽  
pp. 1849-1865 ◽  
Author(s):  
Alberto Argoitia ◽  
John C. Angus ◽  
Jing S. Ma ◽  
Long Wang ◽  
Pirouz Pirouz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Cubic Boron Nitride ◽  
Three Dimensional ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Defect Characterization ◽  
Cross Sectional ◽  
Transmission Electron ◽  
High Resolution Tem

Diamond films grown on {100}, {111} boron-terminated, and nitrogen-terminated facets of cubic boron nitride (c-BN) single crystals were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The evolution of morphology and microstructure of the diamond films at different stages during the growth process were followed by SEM investigation. The results indicate that diamond growth proceeds by nucleation of oriented three-dimensional islands followed by their coalescence. Cross-sectional TEM specimens were prepared from thick (over 10 μm) continuous diamond films grown on {111} boron-terminated surfaces. Selected-area diffraction and high resolution TEM images show that the diamond film has a parallel orientation relationship with respect to the substrate. Characteristic defects, common to diamond films obtained by chemical vapor deposition on other substrates, are also discussed.

Sign in / Sign up

Export Citation Format

Share Document