Atomic Structure of Deep Level Defects in Dimethylaluminum Methoxide-Doped GaAs

AbstractGaAs epilayers doped with dimethylaluminum methoxide (DMA1MO), an alkoxide bearing a pre-formed Al-O molecule, have been investigated using local vibrational mode (LVM) absorption and deep level transient spectroscopy measurements. LVM measurements indicated that oxygen and aluminum atoms are incorporated into GaAs layer as a complex and remain bound in the volume of the crystal. Electron traps with activation energies of 0.74 and 0.93 eV below the conduction band are main deep level defects responsible for the electrical and optical properties of the layers. Interpretation of the relationship between trap concentration and growth conditions led to the conclusion that the 0.93 and 0.74 eV traps have the atomic structures in which oxygen atom is bonded to one (AlO) and two aluminum atoms (A12O), respectively.

The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.205-206.181 ◽

2013 ◽

Vol 205-206 ◽

pp. 181-190 ◽

Cited By ~ 2

Author(s):

Vladimir P. Markevich ◽

Anthony R. Peaker ◽

Bruce Hamilton ◽

S.B. Lastovskii ◽

Leonid I. Murin ◽

...

Keyword(s):

Minority Carrier ◽

Vibrational Mode ◽

Deep Level ◽

Vibrational Modes ◽

Carrier Injection ◽

Local Vibrational Mode ◽

Diffusion Paths ◽

Transient Spectroscopy ◽

And Diffusion

The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed.

Electrical and Optical Properties of Vanadium in Omvpe-Grown GaAs

MRS Proceedings ◽

10.1557/proc-145-125 ◽

1989 ◽

Vol 145 ◽

Author(s):

W. S. Hobson ◽

S. J. Pearton ◽

V. Swaminathan ◽

A. S. Jordan ◽

Y. J. Kao ◽

...

Keyword(s):

Deep Level ◽

Vanadium Content ◽

Epitaxial Layers ◽

Electrical And Optical Properties ◽

Vanadium Concentration ◽

Co Doping ◽

Undoped Material ◽

Maximum Value ◽

Si Doped ◽

Transient Spectroscopy

AbstractThe electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2 H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec – 0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8 × 1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was > 4 × 1016 cm−3. The net carrier concentration profiles resulting from 29 si implantation into GaAs containing 1018 cm−3of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3intracenter emission at 0.65∼0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3only 2.5 × 1013 cm−3was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.

Characterization of Deep-Level Defects in Semi-Insulating GaAs and InP by Photoinduced Transient Spectroscopy (PITS)

MRS Proceedings ◽

10.1557/proc-163-75 ◽

1989 ◽

Vol 163 ◽

Cited By ~ 5

Author(s):

Pawel Kaminski

Keyword(s):

Hall Mobility ◽

Deep Level ◽

Transient Spectroscopy ◽

AbstractDeep states in semi-insulating (SI) materials :GaAs:Cr ,un-doped GaAs and InP:Fe are investigated by Photoinduced Transient Spectroscopy (PITS) .The relationship between the Hall mobility in undoped SI GaAs and occurrence of the EL2-related peak in the PITS spectrum is shown.

Electrical Characterization Of Nitrogen Acceptors In p-ZnSe/p-GaAs Grown By Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-442-573 ◽

1996 ◽

Vol 442 ◽

Author(s):

D. Seghier ◽

H.P. Gislason

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Deep Level ◽

Energy Levels ◽

Reverse Current ◽

Electrical Characterization ◽

Growth Conditions ◽

Current Voltage ◽

Major Interest ◽

Transient Spectroscopy

AbstractUsing current-voltage measurements, deep-level transient spectroscopy and admittance spectroscopy we investigated nitrogen doped ZnSe grown on p-GaAs substrates by molecular beam epitaxy. Three major hole traps were observed with energy levels at 0. 11, 0.46, and 0.56 eV from the valence band. We attribute the level at 0.11 eV to a nitrogen acceptor. No other direct observations of this important acceptor level in p-ZnSe have been reported in the literature so far. The two remaining levels may originate from the nitrogen doping process. In addition, reverse current-voltage characteristics of the ZnSe/GaAs heterojunction show a hysteresis at low temperature and a soft saturation. At a constant reverse bias the current increases slowly until it reaches a steady state value. This behavior is attributed to a slow voltage-induced barrier lowering due to the presence of mismatch interface states. Therefore, these analyses are of a major interest for applications of ZnSe/GaAs based devices and illustrates the necessity of improving the growth conditions of such structures.

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.238 ◽

2017 ◽

Vol 897 ◽

pp. 238-241 ◽

Cited By ~ 1

Author(s):

Louise Lilja ◽

Ildiko Farkas ◽

Ian Booker ◽

Jawad ul Hassan ◽

Erik Janzén ◽

...

Keyword(s):

Low Temperature ◽

Doping Level ◽

Carrier Lifetime ◽

Deep Level ◽

Growth Conditions ◽

Epitaxial Layers ◽

Drastic Decrease ◽

Transient Spectroscopy ◽

Low Temperature Photoluminescence

In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm-3 to mid 1E18 cm-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth conditions except the doping level on comparable substrates, in order to minimize the influence of other parameters than the n-type doping level. We have found a drastic decrease in carrier lifetime with increasing n-type doping level. Epilayers were further characterized with low temperature photoluminescence and deep level transient spectroscopy.

Relationship between Constant Voltage and Constant Capacitance DLTS

International Journal of Electrical Engineering Education ◽

10.1177/002072098302000215 ◽

1983 ◽

Vol 20 (2) ◽

pp. 145-149

Author(s):

W. S. Lau ◽

Y. W. Lam ◽

C. C. Chang

Keyword(s):

Deep Level ◽

Constant Voltage ◽

Unified Approach ◽

Deep Traps ◽

Capacitance Voltage ◽

Voltage Transient ◽

Transient Spectroscopy ◽

Capacitance Transient ◽

A unified approach is presented in the derivation of equations for the constant-voltage capacitance transient and constant-capacitance voltage transient in deep-level transient spectroscopy (DLTS), and for the relationship between them. The validity of these equations is independent of the device and nature of deep traps.

High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP

MRS Proceedings ◽

10.1557/proc-216-365 ◽

1990 ◽

Vol 216 ◽

Author(s):

A. Kuramata ◽

S. Yasmazaki ◽

K. Nakajima

Keyword(s):

Optical Properties ◽

Growth Conditions ◽

Band Edge Emission ◽

Photoluminescence Spectra ◽

Edge Emission ◽

High Quality ◽

Electrical And Optical Properties ◽

Group V ◽

Movpe Growth ◽

ABSTRACTTBA and TBP are attractive candidates for group V sources for MOVPE growth from the viewpoint of safety. We studied how the composition of InGaAsP crystals depends on growth conditions, and investigated its electrical and optical properties. The relationship between group V sources and crystals indicates that TBA and TBP decompose into AsH and PH. Since there is no carbon in AsH and PH, carbon contamination in the crystals is expected to be small. Carrier concentrations ranged from 5×1014 cm−3 to 1.5×1015 cm−3. Photoluminescence spectra at 4.2K showed strong band-edge emission with no acceptor-related emission. Based on the electrical and optical properties of the crystals, we conclude that high-quality InGaAsP crystals can be grown using TBA and TBP.

Deep Level Transient Spectroscopy Study Of High-Temperature Aluminum Implanted 6H-SiC

MRS Proceedings ◽

10.1557/proc-442-649 ◽

1996 ◽

Vol 442 ◽

Author(s):

Yuri A. Stotski ◽

Igor O. Usov ◽

Alexander V. Suvorov

Keyword(s):

High Temperature ◽

Carrier Concentration ◽

Deep Level ◽

Deep Levels ◽

Epitaxial Layers ◽

Spectroscopy Study ◽

Four Levels ◽

Transient Spectroscopy ◽

AbstractDeep levels in 6H-SiC wafers implanted with Al+ ions at high-temperature were studied using current deep level transient spectroscopy (iDLTS). Aluminum was implanted at a temperature of 1800 °C with an energy of 40 keV and a dose of 2 × 1016 cm−2 into n-type epitaxial layers with different carrier concentration. Four levels were found, at Ec−0.12, Ec−0.13, Ec−1.06 and Ev+0.35 eV. It was established that modification of the carrier concentration in original ntype 6H-SiC epitaxial layers affects the deep levels concentration. The relationship between the thickness of the space charge region and the relative deep level concentration was considered.

DLTS Study on Annealed Low-Temperature GaAs Layers with An n-I(LT)-n Structure Grown by MBE

MRS Proceedings ◽

10.1557/proc-378-147 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 1

Author(s):

Tsai-Cheng Lin ◽

Hiromasa T Kaibe ◽

Tsugunori Okumura

Keyword(s):

Low Temperature ◽

Molecular Beam ◽

Deep Level ◽

Gaas Layer ◽

Electron Trap ◽

Molecular Beam Epitaxial ◽

Sample Structure ◽

Transient Spectroscopy ◽

Low Temperature Gaas ◽

Substrate Temperatures

AbstractDeep levels in the annealed low-temperature molecular beam epitaxial (LT-MBE) GaAs layer were successfully characterized by using the capacitance deep-level transient spectroscopy (C-DLTS) as well as photocapacitance quenching technique in combination with a unique sample structure. In this work, we have fabricated the samples by inserting the LT-GaAs layer into two n-type semi-conductive layers, like a sandwich (n-LT-n structure), grown at normal substrate temperatures. DLTS measurements have revealed that one electron trap dominates the annealed LT-MBE GaAs. The dominant electron trap was very similar to the so-called EL3 level. Moreover, we found the midgap level appeared upon 800-900°C RTA, although no midgap level was detected in the as-grown n-LT-n sample (annealed at 620°C) and confirmed with photoquenching measurements that it is the EL2 level.

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.369 ◽

2009 ◽

Vol 615-617 ◽

pp. 369-372

Author(s):

Ioana Pintilie ◽

Lars S. Løvlie ◽

K. Irmscher ◽

Günter Wagner ◽

Bengt Gunnar Svensson ◽

...

Keyword(s):

Vapor Deposition ◽

Deep Level ◽

Chemical Vapor ◽

Growth Conditions ◽

Nitrogen Doped ◽

Radiation Induced ◽

Transient Spectroscopy ◽

Mev Protons ◽

Thermal Stability Of

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons or 1.6 MeV protons. The influence of silane and propane flows used during the epilayers growth on the behaviour of radiation induced EH6,7 levels is studied. Samples grown under different conditions were investigated: 1 sample grown in steps of different C/Si ratio obtained by changing the propane flow only; 1 sample grown in steps of different C/Si ratio obtained by changing the silane flow only; 2 samples grown with a C/Si ratio of 1.5 but with different flows of propane and silane. These investigations revealed that the low thermal stability of EH6,7 (the defects anneal out at temperatures as low as 750K) is due to the magnitude of silane flow used during the growth irrespective of the C/Si ratio. A possible structure of the EH6,7 defect is discussed.