Study of Highly Strained Single InAs−In0.53Ga0.47As Quantum Wells from Phonon Modes by Raman Scattering

1995 ◽  
Vol 379 ◽  
Author(s):  
L. G. Quagliano ◽  
D. Orani ◽  
A. Ricci ◽  
M. G. Simeone ◽  
M. R. Bruni
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Phonon Mode ◽  
Phonon Modes ◽  
Long Wavelength ◽  
Raman Study ◽  
Highly Strained ◽  
Inp Substrates

ABSTRACTWe report Raman study of highly strained single InAs−In0.53Ga0.47As quantum wells grown by molecular beam epitaxy (MBE) on InP substrates with the well thickness between 4 and 15 monolayers. We have used Raman spectroscopy to characterize quality, disorder and strain of these structures which are of considerable interest for long wavelength optical communications.In the Raman spectra we have observed an intense narrow line corresponding to the GaAslike LO mode of In0.53Ga0.47As cap layer and a narrow peak due to the LO phonon mode of the InAs layer. These dominant and sharp features characterize the high homogeneity of our samples. In addition to these features we have observed the appearance of distinct peaks with the increase of the InAs layer thickness. In our opinion the presence of these modes is indicative of a slight deterioration of the structural perfection of the sample with the increase of the well thickness. Our investigation shows the ability of Raman spectroscopy to describe these systems and the good quality of our structures.

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth

scholarly journals Optical Contrast and Raman Spectroscopy Techniques Applied to Few-Layer 2D Hexagonal Boron Nitride

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1047 ◽  
Author(s):  
Marie Krečmarová ◽  
Daniel Andres-Penares ◽  
Ladislav Fekete ◽  
Petr Ashcheulov ◽  
Alejandro Molina-Sánchez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Phonon Mode ◽  
Hexagonal Boron Nitride ◽  
Linear Trend ◽  
Thickness Dependence ◽  
Two Dimensional ◽  
Phonon Modes ◽  
Optical Contrast ◽  
Si Substrates

The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. However, they have so far not been applied to two-dimensional insulators. In this work, we demonstrate the ability of optical contrast techniques to estimate the thickness of few-layer hBN on SiO2/Si substrates, which was also measured by atomic force microscopy. Optical contrast of hBN on SiO2/Si substrates exhibits a linear trend with the number of hBN monolayers in the few-layer thickness range. We also used bandpass filters (500–650 nm) to improve the effectiveness of the optical contrast methods for thickness estimations. We also investigated the thickness dependence of the high frequency in-plane E2g phonon mode of atomically thin hBN on SiO2/Si substrates by micro-Raman spectroscopy, which exhibits a weak thickness-dependence attributable to the in-plane vibration character of this mode. Ab initio calculations of the Raman active phonon modes of atomically thin free-standing crystals support these results, even if the substrate can reduce the frequency shift of the E2g phonon mode by reducing the hBN thickness. Therefore, the optical contrast method arises as the most suitable and fast technique to estimate the thickness of hBN nanosheets.

Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

1998 ◽  
Vol 27 (9) ◽  
pp. 1043-1046 ◽  
Author(s):  
Takahiro Kitada ◽  
Tatsuya Saeki ◽  
Masanobu Ohashi ◽  
Satoshi Shimomura ◽  
Akira Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Inp Substrates

Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

1995 ◽  
Vol 417 ◽  
Author(s):  
F. Peiró ◽  
A. Cornet ◽  
J. C. Ferrer ◽  
J. R. Morante ◽  
G. Halkias ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

THE OBSERVATION OF THE MAGNETIC PHONON MODE IN MODULATION DOPED DILUTE Cd1-xMnxTe/Cd1-yMgyTe QUANTUM WELL STRUCTURE

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1568-1573
Author(s):  
LI-CHUN TUNG ◽  
YONG-JIE WANG ◽  
GRZEGORZ KARCZEWSKI
Keyword(s):  
Quantum Wells ◽  
Phonon Mode ◽  
Magnetic Order ◽  
Far Infrared ◽  
Spin Hamiltonian ◽  
Infrared Transmission ◽  
Phonon Modes ◽  
Modulation Doping ◽  
Mn Concentration ◽  
Absorption Mode

The CdMnTe/CdMgTe quantum wells have been a focus of interests for its novel magnetic and transport properties and applications in spintronics. We have carried out a systematic study over a series of CdMnTe quantum wells with a range of Mn concentration (0%–3.9%) and modulation doping. Far-infrared transmission spectra have revealed several new infrared-active modes which are both magnetic-field and Mn -concentration dependent. The absorption mode near 125cm-1 (B1) is possibly resulted from the magnetic-order-dependent phonon mode due to an ion-position dependent spin Hamiltonian, while the other two (M1 & M2) may be related to the CdTe optical phonon modes.

Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 μm) GaInAsN QWs on InP

2002 ◽  
Vol 744 ◽  
Author(s):  
D. Serries ◽  
T. Geppert ◽  
K. Köhler ◽  
P. Ganser ◽  
J. Wagner
Keyword(s):  
Quantum Wells ◽  
Cohesive Energy ◽  
Local Strain ◽  
Indium Content ◽  
Group Iii ◽  
Long Wavelength ◽  
Inp Substrate ◽  
High Indium Content ◽  
Nitrogen Bonds ◽  
Highly Strained

ABSTRACTRecent results on the local bonding of nitrogen in dilute GaInAsN and AlGaAsN on GaAs are reviewed, revealing that bonding of nitrogen in GaInAsN is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III-N bonding in GaInAsN can be changed from Ga-N to In-N by post-growth thermal annealing. In AlGaAsN, in contrast, nitrogen bonds preferentially to Al, i.e. Al-N bonds are formed, due to the much larger cohesive energy of the Al-N bond. Further, results on indium-rich highly strained GaInAsN quantum wells on InP substrate are reported, showing room-temperature photoluminescence at wavelengths up to 2.3 μm. This result demonstrates the potential of high indium content dilute GaInAsN for InP-based long wavelength diode lasers.

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