Enhanced Hardness and Stress-Driven Delamination in Fe/Pt Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
B.J. Daniels ◽  
W.D. Nix ◽  
B.M. Clemens
Keyword(s):  
Room Temperature ◽  
Multilayer Films ◽  
Film Structure ◽  
Film Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bilayer Period ◽  
Sputter Deposited ◽  
Epitaxial Multilayers ◽  
Qualitative Discussion

ABSTRACTPolycrystalline Fe/Pt multilayers of varying bilayer period, Λ, were sputter deposited onto SiO2 at room temperature. Film structure was characterized by x-ray diffraction, hardness was determined using nanoindentation, and stresses were examined with wafer curvature. The Fe layers were shown to be predominantly {110} oriented while the Pt layers were mostly {111} oriented. The hardnesses of these multilayer films were enhanced over the rule of mixtures value by a factor of almost 3 and exhibited a dependence on Λ which was similar to that previously observed in epitaxial Fe(001)/Pt(001) multilayers. The hardnesses of the polycrystalline multilayers were higher than those of the epitaxial multilayers, presumably due to grain boundary strengthening in these films. Film stress was large (∼1.5 GPa) and compressive, resulting in buckling-driven delamination of the film from the substrate for films with 40≤Λ≤100 Å. Delamination occurred in the “telephone cord” morphology and was observed in real time. A qualitative discussion of our observations of this delamination mechanism is presented.

Stress in Sputtered Co90Fe10/Ag GMR Multilayers

1996 ◽  
Vol 436 ◽  
Author(s):  
J. D. Jarratt ◽  
V. R. Inturi ◽  
J. L. Weston ◽  
J. A. Barnard
Keyword(s):  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Multilayer Films ◽  
Antiferromagnetic Coupling ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
Hexagonal Symmetry ◽  
Individual Layer ◽  
X Ray ◽  
The Difference

AbstractStress, giant magnetoresistance (GMR), structure, and magnetic properties of sputtered (Co90Fe10X Å/Ag Y Å)×20 multilayer films have been investigated at room temperature where X ranges from 7.5 to 25 Å and Y from 10 to 60 Å. These films exhibit distinct GMR behaviors dependent on individual layer thicknesses, including layered granular-type GMR in CoFe 7.5 Å samples and ‘discontinuous’ GMR (DGMR) in CoFe 15 and 25 Å samples with Ag thicknesses over 30 Å. No antiferromagnetic coupling was observed. CoFe 10 Å samples act as a transition between GMR behaviors. Compressive stress decreases with increasing Ag thickness in the CoFe 7.5 Å samples. In the CoFe 15 and 25 Å samples the stress fluctuates similarly depending on Ag thickness. The difference in stress and MR behavior between the CoFe 7.5 Å and the 15 and 25 Å samples is thought to be due to incomplete CoFe layering in the CoFe 7.5 Å samples. In the CoFe 15 Å DGMR samples, high temperature annealing resulted in tensile stresses large enough to cause film detachment. X-ray diffraction reveals a strong (111) growth texture as well as satellite peaks from coherent layering. This (111) texture is also evidenced by patterns with hexagonal symmetry formed by the detached films.

Effect of Structure, Stress, Strain, and Alloying on the Hardness of Fe(001)/Pt(001) Epitaxial Multilayers

1994 ◽  
Vol 356 ◽  
Author(s):  
B. J. Daniels ◽  
W. D. Nix ◽  
B. M. Clemens
Keyword(s):  
Strain Relaxation ◽  
Lattice Parameter ◽  
Film Stress ◽  
Structure Property ◽  
X Ray Diffraction ◽  
Stress Strain ◽  
Structure Property Relationships ◽  
Out Of Plane ◽  
Sputter Deposited ◽  
Epitaxial Multilayers

AbstractThe hardness of epitaxial sputter-deposited Fe(001)/Pt(001) multilayers grown on single crystal MgO(001) has been previously evaluated as a function of composition wavelength, Λ. Nanoindentation results reveal that the hardness is enhanced over that expected from a simple rule of mixtures by a factor of approximately 2.5 for bilayer spacings from 20 to 125 Å. In this paper we investigate possible causes of this hardness enhancement by determining the stress, strain, and alloying in each layer of the multilayer as a function of Λ. Accurate in-plane and out-of-plane lattice parameter measurements were obtained via x-ray diffraction using synchrotron radiation. The stress state and the extent of alloying in each layer as a function of Λ was determined by using the appropriate elastic constants for each component. The stress, strain, and amount of alloying in the Pt layer were near zero for 25≤Λ≤121 Å. The Fe layer exhibited large stresses and strains which relaxed with increasing Λ for 44≤Λ≤121 Å. For Λ=25 Å, the metastable FCC structure was adopted by the Fe film. The amount of alloying also varied from approximately 11 at.% Pt for Λ=44 Å to 5 at.% Pt for Λ=121 Å. Since the structure, film stress, amount of strain relaxation, and extent of alloying vary over this range of Λ while the hardness does not, we conclude that the hardness enhancement in these films must be controlled by other factors. Nevertheless the investigation of these basic film properties has enhanced our understanding of the structure-property relationships that give rise to strengthening in multilayer thin films.

Structural Properties of Sputter-Deposited ZnO Thin Films Depending on the Substrate Materials

2005 ◽  
Vol 475-479 ◽  
pp. 1825-1828
Author(s):  
Ju Hyun Myung ◽  
Nam Ho Kim ◽  
Hyoun Woo Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Sapphire Substrates ◽  
Sputter Deposited

We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing for the ZnO films grown on sapphire substrates.

Electron Microscopy of Human Gallstones

1971 ◽  
Vol 29 ◽  
pp. 296-297
Author(s):  
C. Wolpers ◽  
R. Blaschke
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Bile Pigment ◽  
X Ray Diffraction ◽  
Triclinic Crystal System ◽  
X Ray ◽  
Follow Up Study ◽  
Infra Red ◽  
Main Components

Scanning microscopy was used to study the surface of human gallstones and the surface of fractures. The specimens were obtained by operation, washed with water, dried at room temperature and shadowcasted with carbon and aluminum. Most of the specimens belong to patients from a series of X-ray follow-up study, examined during the last twenty years. So it was possible to evaluate approximately the age of these gallstones and to get information on the intensity of growing and solving.Cholesterol, a group of bile pigment substances and different salts of calcium, are the main components of human gallstones. By X-ray diffraction technique, infra-red spectroscopy and by chemical analysis it was demonstrated that all three components can be found in any gallstone. In the presence of water cholesterol crystallizes in pane-like plates of the triclinic crystal system.

Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

1990 ◽  
Vol 48 (4) ◽  
pp. 172-173
Author(s):  
Naoki Yamamoto ◽  
Makoto Kikuchi ◽  
Tooru Atake ◽  
Akihiro Hamano ◽  
Yasutoshi Saito
Keyword(s):  
Phase Transition ◽  
Electron Microscope Study ◽  
Room Temperature ◽  
Hexagonal Lattice ◽  
Ferroelectric Materials ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Periodic Arrays ◽  
Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Xenon Trioxide Adducts of O-Donor Ligands; [(CH3)2CO]3XeO3, [(CH3)2SO]3(XeO3)2, (C5H5NO)3(XeO3)2, and [(C6H5)3PO]2XeO3

2018 ◽  
Author(s):  
Katherine Marczenko ◽  
James Goettel ◽  
Gary Schrobilgen
Keyword(s):  
Room Temperature ◽  
Triphenylphosphine Oxide ◽  
Donor Ligands ◽  
Mechanical Shock ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Coordination ◽  
Xenon Trioxide ◽  
Distorted Octahedra ◽  
Coordination Spheres

Oxygen coordination to the Xe(VI) atom of XeO<sub>3</sub> was observed in its adducts with triphenylphosphine oxide, dimethylsulfoxide, pyridine-N-oxide, and acetone. The crystalline adducts were characterized by low-temperature, single-crystal X-ray diffraction and Raman spectroscopy. Unlike solid XeO<sub>3</sub>, which detonates when mechanically or thermally shocked, the solid [(C<sub>6</sub>H<sub>5</sub>)<sub>3</sub>PO]<sub>2</sub>XeO<sub>3</sub>, [(CH<sub>3</sub>)<sub>2</sub>SO]<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub>,<sub> </sub>and (C<sub>5</sub>H<sub>5</sub>NO)<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub> adducts are insensitive to mechanical shock, but undergo rapid deflagration when ignited by a flame. Both [(C<sub>6</sub>H<sub>5</sub>)<sub>3</sub>PO]<sub>2</sub>XeO<sub>3 </sub>and (C<sub>5</sub>H<sub>5</sub>NO)<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub> are air-stable whereas [(CH<sub>3</sub>)<sub>2</sub>SO]<sub>3</sub>(XeO<sub>3</sub>)<sub>2</sub> slowly decomposes over several days and [(CH<sub>3</sub>)<sub>2</sub>CO]<sub>3</sub>XeO<sub>3</sub> undergoes adduct dissociation at room temperature. The xenon coordination sphere of [(C<sub>6</sub>H<sub>5</sub>)<sub>3</sub>PO]<sub>2</sub>XeO<sub>3</sub> is a distorted square pyramid which provides the first example of a five-coordinate XeO<sub>3</sub> adduct. The xenon coordination spheres of the remaining adducts are distorted octahedra comprised of three Xe---O secondary contacts that are approximately trans to the primary Xe–O bonds of XeO<sub>3</sub>. Quantum-chemical calculations were used to assess the Xe---O adduct bonds, which are predominantly electrostatic σ-hole bonds between the nucleophilic oxygen atoms of the bases and the σ-holes of the xenon atoms.

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Mechanical Alloying Behavior in the Nb-Si, Ta-Si, and Nb-Ta-Si Systems

1988 ◽  
Vol 133 ◽  
Author(s):  
K. S. Kumar ◽  
S. K. Mannan
Keyword(s):  
High Temperature ◽  
Mechanical Alloying ◽  
Mechanical Milling ◽  
Room Temperature ◽  
Crystalline Compound ◽  
X Ray Diffraction ◽  
X Ray ◽  
Β Phase ◽  
Α Phase

ABSTRACTThe mechanical alloying behavior of elemental powders in the Nb-Si, Ta-Si, and Nb-Ta-Si systems was examined via X-ray diffraction. The line compounds NbSi2 and TaSi2 form as crystalline compounds rather than amorphous products, but Nb5Si3 and Ta5Si3, although chemically analogous, respond very differently to mechanical milling. The Ta5Si3 composition goes directly from elemental powders to an amorphous product, whereas Nb5Si3 forms as a crystalline compound. The Nb5Si3 compound consists of both the tetragonal room-temperature α phase (c/a = 1.8) and the tetragonal high-temperature β phase (c/a = 0.5). Substituting increasing amounts of Ta for Nb in Nb5Si3 initially stabilizes the α-Nb5Si3 structure preferentially, and subsequently inhibits the formation of a crystalline compound.

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