Growth and Characterization of Fept Compound thin Films

1995 ◽  
Vol 384 ◽  
Author(s):  
M.R. Visokay ◽  
R. Sinclair
Keyword(s):  
Epitaxial Films ◽  
Orientation Dependence ◽  
Kerr Rotation ◽  
Fept Alloy ◽  
Disordered Alloys ◽  
Disordered Films ◽  
Out Of Plane ◽  
Temperature Deposition ◽  
Fcc Alloys

ABSTRACTFePt alloy films were deposited at 50 and 49°C onto amorphous SiO2 and single crystal [001] MgO and [0001] Al2O3 using DC magnetron cosputtering, resulting in polycrystalline and [001] and [111] epitaxial films, respectively. High temperature deposition resulted in ordered films with the tetragonal Ll structure and out-of-plane magnetic easy axes while low temperature deposition yielded chemically disordered fcc alloys with in-plane easy axes. Significant modification of the magneto-optic Kerr spectrum is observed for ordered relative to disordered alloys for all orientations. The Kerr rotation has a strong orientation dependence for the ordered, but not disordered films.

scholarly journals STEM Characterization of Dislocation Loops in Irradiated FCC Alloys

2021 ◽  
Vol 544 ◽  
pp. 152658
Author(s):  
Pengyuan Xiu ◽  
Hongbin Bei ◽  
Yanwen Zhang ◽  
Lumin Wang ◽  
Kevin G. Field
Keyword(s):  
Dislocation Loops ◽  
Fcc Alloys

Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range

1999 ◽  
Vol 607 ◽  
Author(s):  
L. Bürkle ◽  
F. Fuchs ◽  
R. Kiefer ◽  
W. Pletschen ◽  
R. E. Sah ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cutoff Wavelength ◽  
Saturation Current ◽  
Diffusion Limited ◽  
Saturation Current Density ◽  
Out Of Plane ◽  
Reverse Saturation Current ◽  
The Magnetic Field ◽  
Diode Current

AbstractInAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes

Preparation and characterization of epitaxial iron oxide films

1998 ◽  
Vol 13 (7) ◽  
pp. 2003-2014 ◽  
Author(s):  
Y. Gao ◽  
Y. J. Kim ◽  
S. A. Chambers
Keyword(s):  
Growth Rate ◽  
Iron Oxide ◽  
Oxygen Plasma ◽  
Film Surface ◽  
Surface Region ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Pure Phase ◽  
Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

Characterization of silicon carbide epitaxial films by differential reflectance spectroscopy

2000 ◽  
Author(s):  
Anatoly V. Shturbin ◽  
Ilya E. Titkov ◽  
Vadim Y. Panevin ◽  
Leonid E. Vorobjev ◽  
Renata F. Witman
Keyword(s):  
Silicon Carbide ◽  
Reflectance Spectroscopy ◽  
Epitaxial Films

Stress Orientation Dependence of Dislocation Glide in Epitaxial Films

1990 ◽  
Vol 202 ◽  
Author(s):  
S. Dakshinamurthy ◽  
K. Rajan
Keyword(s):  
Crystal Orientation ◽  
Stereographic Projection ◽  
Epitaxial Films ◽  
Orientation Dependence ◽  
Stress Axis ◽  
Dislocation Glide ◽  
Stress Orientation ◽  
Slip Transfer

ABSTRACTThe effect of different stresses on the glide of the commonly observed dislocations in epitaxial films is systematically investigated. The possibility of planar dissociation of perfect dislocations and the conditions for their subsequent glide are explored.Slip transfer from one plane to another is affected by the crystal orientation relative to the stress axis. This process is quantitatively analyzed by calculating iso-Schmid factors on a stereographic projection. The results of this model are correlated with those found in the literature.

scholarly journals Influence of an MgTiTaON Inserted Layer on Magnetic Properties and Microstructure of FePtAgC Films

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 238 ◽  
Author(s):  
Jai-Lin Tsai ◽  
Cheng Dai ◽  
Jyun-you Chen ◽  
Ting-Wei Hsu ◽  
Shi-Min Weng ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Cross Section ◽  
Lattice Relaxation ◽  
Fept Film ◽  
Perpendicular Magnetization ◽  
Aspect Ratios ◽  
Out Of Plane ◽  
Temperature Deposition ◽  
Critical Lattice ◽  
C 30

The FePt film above 10 nm critical lattice relaxation thickness was prepared and the ultrathin MgTiTaON layer was interleaved in between FePt film and the multilayer stack is FePt(6 nm)/[MgTiTaON(1 nm)/FePt(4 nm)]2. Next, the FePt films were co-sputtered with (Ag, C) segregants during deposition and the layer stacks is FePt(6 nm)(Ag, C)(x vol %)/[MgTiTaON (1 nm)/FePt(4 nm)(Ag, C) (x vol %)]2 (x = 0, 10, 20, 30, 40). After high temperature deposition at 470 °C, the granular FePt(Ag, C, MgTiTaON) film illustrated perpendicular magnetization and the out-of-plane coercivity (Hc) was increased with (Ag, C) segregants and the highest Hc is 18.3 kOe when x = 40. From cross-section images, the FePt layer are more continuous with 0 and 10 vol% (Ag, C) segregants and changed to an island structure when the (Ag, C) segregants increase to 20–40 vol %. The FePt grains were grown in separated islands in 20, 30 vol % (Ag, C) and changed to dense columnar-like morphology in 40 vol%. The second nucleated grains which contribute the in-plane magnetization are found in FePt (Ag, C) (40 vol %) film. The FePt islands are reached by inserting the ultrathin MgTiTaON layer and the island heights of FePt(Ag, C) (30, 40 vol %) are around 31–38 nm and the aspect ratios are 0.6–0.8.

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