Fabrication of a Free-Standing, Synthetic, Single Crystal Diamond Plate Using Ion Implantation and Plasma-Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
J.B. Posthill ◽  
D.P. Malta ◽  
T.P. Humphreys ◽  
G.C. Hudson ◽  
R.E. Thomas ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrochemical Etching ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Free Standing ◽  
Diamond Plate ◽  
Single Crystal Diamond ◽  
Type Ia ◽  
Lift Off

AbstractUsing a specific combination of energetic and chemical processes we have grown homoepitaxial diamond on and lifted it off of a type Ia natural C(100) crystal. Before growth, the C(100) crystal is exposed to a self implant of 190keV energy and dose of 1E16 cm-2. Low temperature (~600°C) homoepitaxial diamond growth conditions were used that are based on water-alcohol source chemistries. To achieve layer separation (lift-off), samples were annealed to a temperature sufficient to graphitize the buried implant-damaged region. Contactless electrochemical etching was found to remove the graphite, and a transparent synthetic (100) single crystal diamond plate of 17.5μm thickness was lifted off. This free-standing diamond single crystal plate was characterized and found to be comparable to homoepitaxial films grown on unimplanted single crystal diamond.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

2014 ◽  
Vol 104 (25) ◽  
pp. 252109 ◽  
Author(s):  
Yoshiaki Mokuno ◽  
Yukako Kato ◽  
Nobuteru Tsubouchi ◽  
Akiyoshi Chayahara ◽  
Hideaki Yamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
Free Standing ◽  
Nitrogen Doped ◽  
Diamond Plate ◽  
Low Dislocation Density ◽  
Single Crystal Diamond ◽  
Lift Off

Development of Epitaxial, Tiling, and Cutting Processes for a Diamond Single Crystal Wafer Technology

1995 ◽  
Vol 416 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
T. P. Humphreys ◽  
G. C. Hudson ◽  
R. E. Thomas ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrochemical Etching ◽  
Deposition Process ◽  
Diamond Growth ◽  
Diamond Single Crystal ◽  
Large Area ◽  
Free Standing ◽  
Specific Sequence ◽  
Single Crystal Diamond ◽  
Close Proximity

ABSTRACTDevelopment of a diamond homoepitaxial deposition process that utilizes water and-ethanol at a growth temperature of ∼600°C is described. Topographies are excellent, and etch-pit densities (EPD) are in the 106 cm-2 range when growth is done on type Ia C(100) substrates.-This process has been used to epitaxially join diamond single crystals that were bonded in close-proximity to each other. This process of “tiling” single crystal diamonds in close proximity in-order to manufacture a large-area diamond single crystal template is also described. Specially-prepared diamonds that have had their faces and edges oriented to { 100} were coated with-heteroepitaxial Ni, then pressed onto a Si wafer while being heated in an inert gas atmosphere.-The resulting bond is excellent; thereby permitting our 600°C diamond deposition process to-epitaxially join the diamonds. A diamond wafer cutting technology has been addressed using a-specific sequence consisting of: ion implantation, homoepitaxial diamond growth, annealing, and-contactless electrochemical etching. This “lift-off” method of cutting has thus far resulted in a 2mm×O.5mm×17.5μm transparent, synthetic, free-standing, single crystal diamond plate being-fabricated. Raman spectroscopy and EPD show the plate to be comparable to our best-homoepitaxial diamond.

scholarly journals Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

2015 ◽  
Vol 1734 ◽  
Author(s):  
Samuel L. Moore ◽  
Yogesh K. Vohra
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Defect Center ◽  
Defect Centers ◽  
Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

Lift -Off Process to get Free-Standing High Quality Single Crystal Diamond Films and Suspended Single Crystal Diamond Devices

2006 ◽  
Vol 956 ◽  
Author(s):  
Jie Yang ◽  
C. F. Wang ◽  
E. L. Hu ◽  
James E. Butler
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Light Transmission ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Critical Parameters ◽  
Transmission Microscopy ◽  
Single Crystal Diamond ◽  
Cvd Growth ◽  
Lift Off

ABSTRACTFreestanding and suspended single crystal diamond devices, micro disks and beam structures, have been fabricated on single crystal diamond substrates using a lift-off process employing ion implantation followed by electrochemical etching. The ion implantation created subsurface damage in the diamond while the top surface was sufficiently undamaged that a subsequent homo-epitaxial diamond layer could be grown by chemical vapor deposition (CVD). After the CVD growth and patterning by lithography and reactive ion etching, the underlying damage layer was etched/removed by an electrochemical etch. Different implant ions and energies were simulated and tested to optimize the process. The electrochemical etching process was monitored by an optical video technique. The electrochemical etching process used both ac and dc applied electrical potentials. Photoluminescence (PL), Raman spectra, and polarized light transmission microscopy have been used to characterize the implanted substrate and lift-off films. AFM has been used to monitor the surface changes after mechanical polishing, ion implantation, CVD growth and the lift-off process. This research has revealed that the parameters of ion implantation (implant species, dose and energy) dramatically affect the lift-off process. The etching mechanism and critical parameters are discussed in this work. PL spectroscopy indicated differences between the uppermost layers of the homo-epitaxial film and the lift-off interface. Three principal classes of defects have been observed: growth defects inherent in the diamond substrates (type Ib, HPHT), defects induced by the polishing process and associated stress, and point defects.

Characterization of epitaxial diamond on natural diamond substrates by cathodoluminescence

1993 ◽  
Vol 51 ◽  
pp. 614-615
Author(s):  
D.P. Malta ◽  
E.A. Fitzgerald ◽  
J.B. Posthill ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
...  
Keyword(s):  
Natural Diamond ◽  
Chemical Vapor ◽  
Wide Band ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Wide Band Gap ◽  
Type Ia ◽  
Large Effort ◽  
Surface Morphologies

A large effort continues in the development of diamond growth technologies for the production of electronic-grade diamond epitaxy. Diamond has several properties such as a wide band gap (5.48 eV) and high thermal conductivity (2000 W m-1K-1) that make it desirable for electronic applications. Characterization of diamond with cathodoluminescence (CL) spectroscopy yields information on impurity and defect distributions with both spatial and energy resolution, providing insight into the growth process.Diamond films were grown by plasma-enhanced chemical vapor deposition (PECVD) on natural type Ia 1mm × 1mm × 0.25mm diamond substrates. The results of microstructural studies on this type substrate are discussed elsewhere in these proceedings. Two films were selected for CL analysis based on their strikingly different surface morphologies but similar growth conditions. Both were grown for 6 hours at a substrate temperature of ∽ 750°C and a pressure of 5 Torr. The gas mixtures were varied: CO/CH4/H2 was used in one case and CH4/H2 in the other.

Progress on Preferential Etching and Phosphorus Doping of Single Crystal Diamond

2014 ◽  
Vol 1634 ◽  
Author(s):  
Timothy A. Grotjohn ◽  
Dzung T. Tran ◽  
M. Kagan Yaran ◽  
Thomas Schuelke
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Growth Conditions ◽  
Room Temperature Resistivity ◽  
Single Crystal Diamond

ABSTRACTPhosphorus is incorporated into single crystal diamond during epitaxial growth at higher concentrations on the (111) crystallographic surface than on the (001) crystallographic surface. To form n+-type regions in diamond for semiconductor devices it is beneficial to deposit on the (111) surface. However, diamond deposition is faster and of higher quality on the (001) surface. A preferential etch method is described that forms inverted pyramids on the (001) surface of a substrate diamond crystal, which opens (111) faces for improved phosphorus incorporation. The preferential etching occurs on the surface in regions where a nickel film is deposited. The etching is performed in a microwave generated hydrogen plasma operating at 160 Torr with the substrate temperature in the range of 800-950 °C. The epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm-3 is performed using a microwave plasma-assisted chemical vapor deposition process. Successful growth conditions were achieved with a feedgas mixture of 0.25% methane, 500 ppm phosphine and hydrogen at a pressure of 160 Torr and a substrate temperature of 950-1000°C. The room temperature resistivity of the phosphorus-doped diamond is 120-150 Ω-cm and the activation energy is 0.027 eV.

Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition

2014 ◽  
Vol 48 ◽  
pp. 19-23 ◽  
Author(s):  
Shinya Ohmagari ◽  
Hideaki Yamada ◽  
Hitoshi Umezawa ◽  
Akiyoshi Chayahara ◽  
Tokuyuki Teraji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Free Standing ◽  
Single Crystal Diamond ◽  
Hot Filament

Growth Technique For Large Area Mosaic Diamond Films†

1992 ◽  
Vol 242 ◽  
Author(s):  
R. W. Pryor ◽  
M. W. Geis ◽  
H. R. Clark
Keyword(s):  
Single Crystal ◽  
Electronic Properties ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Growth Conditions ◽  
Large Area ◽  
Si Substrates ◽  
Single Crystal Diamond ◽  
The Individual

ABSTRACTA new technique has been developed to grow semiconductor grade diamond substrates with dimensions comparable to those of currently available Si wafers. Previously, the synthetic single crystal diamond that could be grown measured only a few millimeters across, compared with single crystal Si substrates which typically are 10 to 15 cm in diameter. In the technique described, an array of features is first etched in a Si substrate. The shape of the features matches that of inexpensive, synthetic faceted diamond seeds. A diamond mosaic is then formed by allowing the diamond seeds to settle out of a slurry onto the substrate, where they become fixed and oriented in the etched features. For the experiments reported, the mosaic consists of seeds ∼ 100 μm across on 100 μm centers. A mosaic film is obtained by chemical vapor deposition of homoepitaxial diamond until the individual seeds grow together. Although these films contain low angle (<1°) grain boundaries, smooth, continuous diamond films have been obtained with electronic properties substantially better than those of polycrystalline diamond films and equivalent to those of homoepitaxial single crystal diamond films. The influence of growth conditions and seeding procedures on the crystallographic and electronic properties of these mosaic diamond films is discussed.

The value of Electron Microscope studies of imperfect natural diamonds

1990 ◽  
Vol 48 (4) ◽  
pp. 194-195
Author(s):  
J C Walmsley ◽  
A R Lang
Keyword(s):  
Electron Microscope ◽  
Classification Scheme ◽  
Natural Diamond ◽  
Sudden Change ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Major Constituent ◽  
Natural Diamonds ◽  
Type Ia ◽  
Platelet Defects

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.

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