The Gas Field Ion Source for Finely Focused Ion Beam Systems

1995 ◽  
Vol 396 ◽  
Author(s):  
W. Thompson ◽  
A. Armstrong ◽  
S. Etchin ◽  
R. Percival ◽  
A. Saxonis
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Vacuum Chamber ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Max Planck ◽  
Gas Field ◽  
Ion Optics ◽  
Ion Species

AbstractThe Gas Field Ion Source, GFIS, promises a 109A/(cm2 str) brightness, small beam sizes, and inert gas ion species. If this performance could be demonstrated on a commercial system, the GFIS might replace the liquid metal ion source as the standard source for FIB applications. Recent work at the Max-Planck-Institut für Kernphysik (MPI-K) in Heidelberg, Germany has shown that a GFIS with a ‘Super Tipped’ emitter can be reliably fabricated and can be run with stable helium beam current for more than 200 hours. However, this GFIS source must operate in a bakable UHV chamber, at cryogenic temperatures, and at high voltages with low vibration. A GFIS is now being integrated with high resolution ion optics and a vacuum chamber designed for studying GFIS image quality and ion induced chemistry.

scholarly journals Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

2020 ◽  
Vol 11 ◽  
pp. 1742-1749
Author(s):  
Nico Klingner ◽  
Gregor Hlawacek ◽  
Paul Mazarov ◽  
Wolfgang Pilz ◽  
Fabian Meyer ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Ion Source ◽  
Metal Alloy ◽  
Gas Field ◽  
Helium Ion ◽  
Liquid Metal Alloy ◽  
Ion Species

While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1–28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He+ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li+ or Be+ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.

scholarly journals Direct Write of 3D Nanoscale Mesh Objects with Platinum Precursor via Focused Helium Ion Beam Induced Deposition

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 527
Author(s):  
Alex Belianinov ◽  
Matthew J. Burch ◽  
Anton Ievlev ◽  
Songkil Kim ◽  
Michael G. Stanford ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Direct Write ◽  
Gas Field ◽  
Critical Dimensions ◽  
3D Mesh ◽  
Nanoscale Structures ◽  
Helium Ion

The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects. We note subtle beam heating effects, which impact the segment angle and the feature size. Additionally, we investigate the competition of material deposition and sputtering during the 3D FIBID process, with helium ion microscopy experiments and Monte Carlo simulations. Our results show complex 3D mesh structures measuring ~300 nm in the largest dimension, with individual features as small as 16 nm at full width half maximum (FWHM). These assemblies can be completed in minutes, with the underlying fabrication technology compatible with existing lithographic techniques, suggesting a higher-throughput pathway to integrating FIBID with established nanofabrication techniques.

Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look

2017 ◽  
Vol 23 (4) ◽  
pp. 758-768 ◽  
Author(s):  
Marek E. Schmidt ◽  
Anto Yasaka ◽  
Masashi Akabori ◽  
Hiroshi Mizuta
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Covalent Bond ◽  
Ion Source ◽  
Single Digit ◽  
Gas Field ◽  
Wide Range ◽  
Imaging Dose ◽  
Carbon Based

AbstractThe recent technological advance of the gas field ion source (GFIS) and its successful integration into systems has renewed the interest in the focused ion beam (FIB) technology. Due to the atomically small source size and the use of light ions, the limitations of the liquid metal ion source are solved as device dimensions are pushed further towards the single-digit nanometer size. Helium and neon ions are the most widely used, but a large portfolio of available ion species is desirable, to allow a wide range of applications. Among argon and hydrogen, $${\rm N}_{2}^{{\plus}} $$ ions offer unique characteristics due to their covalent bond and their use as dopant for various carbon-based materials including diamond. Here, we provide a first look at the $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB enabled imaging of a large selection of microscopic structures, including gold on carbon test specimen, thin metal films on insulator and nanostructured carbon-based devices, which are among the most actively researched materials in the field of nanoelectronics. The results are compared with images acquired by He+ ions, and we show that $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB can offer improved material contrast even at very low imaging dose and is more sensitive to the surface roughness.

Sample Preparation and Analysis on Full-Thickness Silicon Wafers for Wafer-to-Wafer Bonding Process Development

2010 ◽  
Author(s):  
Richard J. Young ◽  
Alex Buxbaum ◽  
Corey Senowitz ◽  
C. Deeb ◽  
W.H. Teh
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Full Thickness ◽  
Analysis Techniques ◽  
Process Characterization ◽  
Reactive Gas

Abstract Focused ion beam (FIB) systems use a gallium liquid metal ion source as the source of the ions, providing a typical beam current range of 1 pA to 20-60 nA. Using a reactive gas in addition to the FIB usually enhances the etch rate from 1 to 15 times, but with the combination of xenon difluoride gas and a silicon substrate the enhancement can be over 1000 times. Such an enhancement makes the removal of large volumes of Si more practical, even with the typical upper end of FIB currents of 20-60 nA. This paper discusses the application of full-thickness silicon trenching to the process development of WtW bonding. With the increase in 3DIC, it is expected that fresh process characterization and failure analysis techniques will be required. The work presented shows the feasibility of extending FIB techniques to the process development of wafer-to-wafer bonded samples even on full-thickness wafers.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

FABRICATION AND MODELING OF MICROCHANNEL MILLING USING FOCUSED ION BEAM

2003 ◽  
Vol 02 (04n05) ◽  
pp. 375-379 ◽  
Author(s):  
A. A. TSENG ◽  
B. LEELADHARAN ◽  
B. LI ◽  
I. INSUA ◽  
C. D. CHEN
Keyword(s):  
Numerical Model ◽  
Silicon Wafer ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Experimental Measurements ◽  
Model Predictions

The capability of using Focused Ion Beam (FIB) for milling microchannels is experimentally and theoretically investigated. Microchannel structures are fabricated by a NanoFab 150 FIB machine, using an Arsenic (As2+) ion source. A beam current of 5 pA at 90 keV accelerating energy is used. Several microchannel patternings are milled at various dwell times at pixel spacing of 14.5 nm on top of a 60 nm gold-coated silicon wafer. An analytical/numerical model is developed to predict the FIB milling behavior. By comparing with the experimental measurements, the model predictions have been demonstrated to be reliable for guiding and controlling the milling processes.

Dy–Ni alloy metal ion source for focused ion beam implantation

Vacuum ◽  
2002 ◽  
Vol 67 (2) ◽  
pp. 249-251 ◽  
Author(s):  
A Melnikov ◽  
M Hillmann ◽  
I Kamphausen ◽  
W Oswald ◽  
P Stauche ◽  
...  
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Ni Alloy ◽  
Ion Beam Implantation ◽  
Alloy Metal
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