scholarly journals Direct Write of 3D Nanoscale Mesh Objects with Platinum Precursor via Focused Helium Ion Beam Induced Deposition

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 527
Author(s):  
Alex Belianinov ◽  
Matthew J. Burch ◽  
Anton Ievlev ◽  
Songkil Kim ◽  
Michael G. Stanford ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Direct Write ◽  
Gas Field ◽  
Critical Dimensions ◽  
3D Mesh ◽  
Nanoscale Structures ◽  
Helium Ion

The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects. We note subtle beam heating effects, which impact the segment angle and the feature size. Additionally, we investigate the competition of material deposition and sputtering during the 3D FIBID process, with helium ion microscopy experiments and Monte Carlo simulations. Our results show complex 3D mesh structures measuring ~300 nm in the largest dimension, with individual features as small as 16 nm at full width half maximum (FWHM). These assemblies can be completed in minutes, with the underlying fabrication technology compatible with existing lithographic techniques, suggesting a higher-throughput pathway to integrating FIBID with established nanofabrication techniques.

scholarly journals Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

2020 ◽  
Vol 11 ◽  
pp. 1742-1749
Author(s):  
Nico Klingner ◽  
Gregor Hlawacek ◽  
Paul Mazarov ◽  
Wolfgang Pilz ◽  
Fabian Meyer ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Ion Source ◽  
Metal Alloy ◽  
Gas Field ◽  
Helium Ion ◽  
Liquid Metal Alloy ◽  
Ion Species

While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1–28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He+ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li+ or Be+ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.

The Gas Field Ion Source for Finely Focused Ion Beam Systems

1995 ◽  
Vol 396 ◽  
Author(s):  
W. Thompson ◽  
A. Armstrong ◽  
S. Etchin ◽  
R. Percival ◽  
A. Saxonis
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Vacuum Chamber ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Max Planck ◽  
Gas Field ◽  
Ion Optics ◽  
Ion Species

AbstractThe Gas Field Ion Source, GFIS, promises a 109A/(cm2 str) brightness, small beam sizes, and inert gas ion species. If this performance could be demonstrated on a commercial system, the GFIS might replace the liquid metal ion source as the standard source for FIB applications. Recent work at the Max-Planck-Institut für Kernphysik (MPI-K) in Heidelberg, Germany has shown that a GFIS with a ‘Super Tipped’ emitter can be reliably fabricated and can be run with stable helium beam current for more than 200 hours. However, this GFIS source must operate in a bakable UHV chamber, at cryogenic temperatures, and at high voltages with low vibration. A GFIS is now being integrated with high resolution ion optics and a vacuum chamber designed for studying GFIS image quality and ion induced chemistry.

scholarly journals Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1394 ◽  
Author(s):  
Cheng Zhang ◽  
Ondrej Dyck ◽  
David A. Garfinkel ◽  
Michael G. Stanford ◽  
Alex A. Belianinov ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Ion Source ◽  
Ion Sources ◽  
Monolayer Graphene ◽  
Liquid Gallium ◽  
Direct Write ◽  
Gas Field ◽  
Helium Ion ◽  
Helium Gas

A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He+ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He+ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns.

scholarly journals Ion beam profiling from the interaction with a freestanding 2D layer

2017 ◽  
Vol 8 ◽  
pp. 682-687 ◽  
Author(s):  
Ivan Shorubalko ◽  
Kyoungjun Choi ◽  
Michael Stiefel ◽  
Hyung Gyu Park
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Exposure Dose ◽  
Ion Beams ◽  
Gaussian Profile ◽  
Helium Ion ◽  
Spread Function ◽  
Sputtering Yields ◽  
Pattern Resolution

Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a freestanding two-dimensional (2D) layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.

FABRICATION AND MODELING OF MICROCHANNEL MILLING USING FOCUSED ION BEAM

2003 ◽  
Vol 02 (04n05) ◽  
pp. 375-379 ◽  
Author(s):  
A. A. TSENG ◽  
B. LEELADHARAN ◽  
B. LI ◽  
I. INSUA ◽  
C. D. CHEN
Keyword(s):  
Numerical Model ◽  
Silicon Wafer ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Experimental Measurements ◽  
Model Predictions

The capability of using Focused Ion Beam (FIB) for milling microchannels is experimentally and theoretically investigated. Microchannel structures are fabricated by a NanoFab 150 FIB machine, using an Arsenic (As2+) ion source. A beam current of 5 pA at 90 keV accelerating energy is used. Several microchannel patternings are milled at various dwell times at pixel spacing of 14.5 nm on top of a 60 nm gold-coated silicon wafer. An analytical/numerical model is developed to predict the FIB milling behavior. By comparing with the experimental measurements, the model predictions have been demonstrated to be reliable for guiding and controlling the milling processes.

Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look

2017 ◽  
Vol 23 (4) ◽  
pp. 758-768 ◽  
Author(s):  
Marek E. Schmidt ◽  
Anto Yasaka ◽  
Masashi Akabori ◽  
Hiroshi Mizuta
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Covalent Bond ◽  
Ion Source ◽  
Single Digit ◽  
Gas Field ◽  
Wide Range ◽  
Imaging Dose ◽  
Carbon Based

AbstractThe recent technological advance of the gas field ion source (GFIS) and its successful integration into systems has renewed the interest in the focused ion beam (FIB) technology. Due to the atomically small source size and the use of light ions, the limitations of the liquid metal ion source are solved as device dimensions are pushed further towards the single-digit nanometer size. Helium and neon ions are the most widely used, but a large portfolio of available ion species is desirable, to allow a wide range of applications. Among argon and hydrogen, $${\rm N}_{2}^{{\plus}} $$ ions offer unique characteristics due to their covalent bond and their use as dopant for various carbon-based materials including diamond. Here, we provide a first look at the $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB enabled imaging of a large selection of microscopic structures, including gold on carbon test specimen, thin metal films on insulator and nanostructured carbon-based devices, which are among the most actively researched materials in the field of nanoelectronics. The results are compared with images acquired by He+ ions, and we show that $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB can offer improved material contrast even at very low imaging dose and is more sensitive to the surface roughness.

scholarly journals An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

2020 ◽  
Vol 11 ◽  
pp. 1272-1279
Author(s):  
Santiago H Andany ◽  
Gregor Hlawacek ◽  
Stefan Hummel ◽  
Charlène Brillard ◽  
Mustafa Kangül ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Focused Ion Beam ◽  
Environmental Changes ◽  
Ion Beam ◽  
Nanomechanical Property ◽  
Nanoscale Structures ◽  
Atomic Force ◽  
Helium Ion ◽  
Nanoscale Characterization ◽  
Versatile Tool

In this work, we report on the integration of an atomic force microscope (AFM) into a helium ion microscope (HIM). The HIM is a powerful instrument, capable of imaging and machining of nanoscale structures with sub-nanometer resolution, while the AFM is a well-established versatile tool for multiparametric nanoscale characterization. Combining the two techniques opens the way for unprecedented in situ correlative analysis at the nanoscale. Nanomachining and analysis can be performed without contamination of the sample and environmental changes between processing steps. The practicality of the resulting tool lies in the complementarity of the two techniques. The AFM offers not only true 3D topography maps, something the HIM can only provide in an indirect way, but also allows for nanomechanical property mapping, as well as for electrical and magnetic characterization of the sample after focused ion beam materials modification with the HIM. The experimental setup is described and evaluated through a series of correlative experiments, demonstrating the feasibility of the integration.

Effect of height and atomic arrangement of the super-tip of a gas field ion emitter on helium ion beam current

2016 ◽  
Vol 48 (11) ◽  
pp. 1132-1135 ◽  
Author(s):  
Shigekazu Nagai ◽  
Shu Katoh ◽  
Tatsuo Iwata ◽  
Kazuo Kajiwara ◽  
Koichi Hata
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Gas Field ◽  
Atomic Arrangement ◽  
Helium Ion

scholarly journals Helium focused ion beam direct milling of plasmonic heptamer-arranged nanohole arrays

Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 393-399 ◽  
Author(s):  
Choloong Hahn ◽  
Akram Hajebifard ◽  
Pierre Berini
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Spot Size ◽  
Direct Write ◽  
Drift Correction ◽  
Optical Resonance ◽  
Ionization Source ◽  
Gas Field ◽  
Correction Technique ◽  
20 Nm

AbstractWe fabricate plasmonic heptamer-arranged nanohole (HNH) arrays by helium (He) focused ion beam (HeFIB) milling, which is a resist-free, maskless, direct-write method. The small He+ beam spot size and high milling resolution achieved by the gas field-ionization source used in our HeFIB allows the milling of high aspect ratio (4:1) nanoscale features in metal, such as HNHs incorporating 15 nm walls of high verticality between holes in a 55-nm-thick gold film. Drifts encountered during the HeFIB milling of large arrays, due to sample stage vibrations or He beam instability, were compensated by a drift correction technique based on in situ He ion imaging of alignment features. Our drift correction technique yielded 20 nm maximum dislocation of HNHs, with 6.9 and 4.6 nm average dislocations along the horizontal and vertical directions, respectively. The measured optical resonance spectra of the fabricated plasmonic HNH arrays are presented to support the fabrication technique. Defects associated with HeFIB milling are also discussed.

Sample Preparation and Analysis on Full-Thickness Silicon Wafers for Wafer-to-Wafer Bonding Process Development

2010 ◽  
Author(s):  
Richard J. Young ◽  
Alex Buxbaum ◽  
Corey Senowitz ◽  
C. Deeb ◽  
W.H. Teh
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Full Thickness ◽  
Analysis Techniques ◽  
Process Characterization ◽  
Reactive Gas

Abstract Focused ion beam (FIB) systems use a gallium liquid metal ion source as the source of the ions, providing a typical beam current range of 1 pA to 20-60 nA. Using a reactive gas in addition to the FIB usually enhances the etch rate from 1 to 15 times, but with the combination of xenon difluoride gas and a silicon substrate the enhancement can be over 1000 times. Such an enhancement makes the removal of large volumes of Si more practical, even with the typical upper end of FIB currents of 20-60 nA. This paper discusses the application of full-thickness silicon trenching to the process development of WtW bonding. With the increase in 3DIC, it is expected that fresh process characterization and failure analysis techniques will be required. The work presented shows the feasibility of extending FIB techniques to the process development of wafer-to-wafer bonded samples even on full-thickness wafers.

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