The Influence of Weak Links and Oxygen Deficiency on Electrical Properties of Bi-2212 and Ti-2212 Hts Thin Films

1995 ◽  
Vol 401 ◽  
Author(s):  
Jon L. Schindler ◽  
Frank Dimeo ◽  
Carolyn R. Duran ◽  
Bruce J. Hinds ◽  
Bruce W. Wessels ◽  
...  

AbstractThin films of the Bi-2212 and T1–2212 compounds were prepared by MOCVD deposition techniques. Resistivity versus temperature and critical current density measurements were used to characterize the electrical properties. An analysis of the data based on a proposed model determined the influence of intragranular weak links. Thin film samples in both systems with near optimum oxygen doping showed a correlation between the slope and magnitude of the resistivity in the normal state. Samples with reduced oxygen content displayed a strong increase in the intragrain boundary resistance, consistent with weak link defects. The results agree with a similar analysis of YBCO samples and support a common mechanism for the development of weak links in cuprates.

Author(s):  
M. Grant Norton ◽  
C. Barry Carter

The microstructure of superconducting thin-films often strongly influences their electrical properties. The actual microstructure of the film will be dependent on the nucleation and early stages of film growth, although the substrate will also be expected to exert an influence during the early stages of growth by the establishment of epitaxy. The highest critical currents have been obtained with films grown on SrTiO3, however MgO is of fundamental interest because patterned films on MgO have been shown to possess Josephson weak-link structure. The presence of the Josephson weak-links has been correlated with the occurrence of misaligned grains in films grown on MgO. Ultra-thin films of high-Tc superconductors are of interest for understanding the properties of these materials and may also be of use in technical applications.The microstructure of ultra-thin YBa2Cu3O7−δ films prepared by pulsed-laser ablation onto (001)- oriented MgO has been studied using transmission electron microscopy (TEM) and selected-area diffraction (SAD).


1992 ◽  
Vol 275 ◽  
Author(s):  
H. B. Lu ◽  
S. L. Tu ◽  
J. J. Wang ◽  
J. Lin ◽  
T. W. Huang ◽  
...  

ABSTRACTThe characteristics of YBa2Cu3O7−x (YBCO) thin films by laser ablation on MgO bicrystals have been investigated. The bicrystals were fabricated by hot pressing two single crystals with the configuration of [001] tilt boundaries. The YBCO films were epitaxial grown with C-axis normal to the both adjacent grains of bicrystals. The FWHM about (005) reflection was 0.4–0.5 degree, indicating the high degree of the oriention for the film with small mosaic spread. Our preliminary study showed that the typical value of Jc on either side of the bicrystal boundary was 0.4–10×106 A/cm2 at 15K, while that across the 10° tilt boundaries was 0.3–9×105 A/cm2 at 15K. These results implied that the artificial grain boundaries effectively weakened the supercurrent, and therefore, the weak-link properties of artificial boundaries were more easily controllable than those of naturally occuring grain boundaries.


2013 ◽  
Vol 743-744 ◽  
pp. 878-885
Author(s):  
Ming Wang ◽  
Xun Gang Diao ◽  
Ting Ting Guo ◽  
Xuan Wang

Nowadays, high performance p-type transparent conductive oxide (TCO) thin films have gained tremendous intersts, and the fact is that if p-type TCOs with high electrical conductivity and optical transmittance can be fabricated, transparent p-n junctions can be obtained and invisible electronics be realized, and hence the use area of TCOs will be highly broadened. A lot of work have been done on non-stoichiometric and doped versions of p-type TCOs in the last few years to improve the optical and electrical properties by various deposition techniques. ZnO-based thin films were thought to be the most promising candidate for p-type TCOs based on the fact that ZnO has advantages over the others, so in this paper the development of ZnO-based p-type TCOs has been discussed. Firstly, the reasons why p-type ZnO-based TCOs are difficult to synthesize were discussed, and then the general ways now used to produce p-type ZnO-based TCOs were summerized, including intrinsic p-type ZnO, doping of groupelements, codoping of and elements, doping of group elements, the origin of p-type conductivity and the feasibility of each way, and the state-of-the-art optical and electrical properties were presented. Finally, the specific shortcomings in producing high quality p-type TCOs were discussed. Based on the comparision, it is believed that the doping of groupelements in ZnO may be the most pronising way in realizing p-type TCO.


1992 ◽  
Vol 275 ◽  
Author(s):  
J. Bohandy ◽  
B. F. Kim ◽  
K. Moorjani ◽  
F. J. Adrian

ABSTRACTEvidence of weak link effects in epitaxial thin films of YBa2Cu3O7-yon LaAlO3 is obtained from magnetically modulated resistance (MMR) measurements. This result suggests that weak links could provide a mechanism for the residual microwave loss in high quality superconducting thin films which contain predominantly low angle grain boundaries.


2016 ◽  
Vol 30 (04) ◽  
pp. 1650024 ◽  
Author(s):  
Leili Motevalizadeh ◽  
Boshra Ghanbari Shohany ◽  
Majid Ebrahimizadeh Abrishami

In this paper, we have investigated the effect of Mn doping on the electrical properties of ZnO thin films. ZnO thin films with different amounts of Mn concentrations (0, 5, 10 and 15 mol.%) were prepared by spray pyrolysis technique. The crystal structure was examined by X-ray diffraction (XRD) analysis. XRD patterns showed that all the samples were crystallized in wurtzite structure while a decrease in crystallinity and switch in preferential orientations were observed in Mn-doped thin films comparing to undoped ZnO. The element composition of all thin films was detected by energy dispersive X-ray (EDX). The surface morphology of the films was investigated using field emission scanning electron microscope (FESEM) and optical properties were studied using UV-vis spectroscopy. UV-vis study revealed that the band gap blueshifts with the increase in Mn content and [Formula: see text] increases with the increase in Mn concentration. The resistivity and activation energy were measured at room temperature and ranging from 373 K to 573 K. Comparing to undoped ZnO thin film, the resistivity of Mn-doped ZnO films increased because of different parameters such as increasing barrier height energy and reducing the oxygen deficiency.


Author(s):  
J.P.S. Hanjra

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.


2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage


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