Stress-Temperature Behavior and Stress Relaxation in Ti/Al-0.5%Cu/TiN and TiN/W Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
L. Doucet ◽  
A. Brun ◽  
H. Jaouen ◽  
M. Dupeux ◽  
M. Ignat
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Yield Strength ◽  
Measurement System ◽  
Thermal Wave ◽  
Intrinsic Stress ◽  
Temperature Behavior ◽  
Induce Stress ◽  
Stress Variations ◽  
Non Destructive

AbstractThe stress behavior of two structures (Ti/Al-0.5%Cu/TiN and TiN/W) has been analyzed versus temperature up to 400 °C using the Flexus measurement system. Microstructure modifications induce stress variations with temperature. Furthermore, stress relaxation after annealing has been investigated. Al-based metallization stress is essentially due to thermal issues and reaches rapidly its yield strength whereas the W film exhibits high intrinsic stress. Microstructural observations afte deposition and after annealing have been conducted using a non destructive technique, the Thermal Wave Imager.

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

A New Method for Measuring Residual Stress Relaxation during Nanoindentation

2005 ◽  
Vol 490-491 ◽  
pp. 213-217
Author(s):  
Fei Wang ◽  
Ke Wei Xu
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Stress State ◽  
Stress Relaxation ◽  
Yield Strength ◽  
Strain Hardening ◽  
Penetration Depth ◽  
Residual Stress Relaxation ◽  
Depth Curve ◽  
Strain Hardening Index

The work of nanoindentation approach is developed and applied for measure of residual stress relaxation during indenter penetrates in thin films. The residual stress at given penetration depth is measured from the different integral area which under load-depth curve of different stress state. This method can measure residual stress relaxation without the need for estimating yield strength, strain hardening index and hardness.

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

MeV Ion-Beam Bombardment Effects on The Thermoelectric Figures of Merit of Zn4Sb3 and ZrNiSn-Based half-heusler compounds

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Measurement System ◽  
Ion Beam ◽  
Electrical Energy ◽  
Figures Of Merit ◽  
Material Systems ◽  
The Cross ◽  
Conductivity Of Thin Films

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Development of a neutron measurement system in unified non-destructive assay for the PRIDE facility

2013 ◽  
Vol 63 (11) ◽  
pp. 2080-2084 ◽  
Author(s):  
Hee Seo ◽  
Se-Hwan Park ◽  
Byung-Hee Won ◽  
Seong-Kyu Ahn ◽  
Hee-Sung Shin ◽  
...  
Keyword(s):  
Measurement System ◽  
Neutron Measurement ◽  
Non Destructive

Solution‐Processed Chemically Non‐Destructive Filter Transfer of Carbon‐Nanotube Thin Films onto Arbitrary Materials

2021 ◽  
pp. 2100953
Author(s):  
Manabu Ishizaki ◽  
Daiki Satoh ◽  
Rin Ando ◽  
Mikuto Funabe ◽  
Jun Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Solution Processed ◽  
Non Destructive

NON-DESTRUCTIVE EVALUATION OF CONCRETE STRUCTURES BY NON-STATIONARY THERMAL WAVE IMAGING

2012 ◽  
Vol 32 ◽  
pp. 39-48 ◽  
Author(s):  
Ravibabu Mulaveesala ◽  
Soma Sekhara Balaji Panda ◽  
Rupla Naik Mude ◽  
Muniyappa Amarnath
Keyword(s):  
Thermal Wave ◽  
Concrete Structures ◽  
Non Destructive Evaluation ◽  
Wave Imaging ◽  
Non Destructive ◽  
Thermal Wave Imaging

scholarly journals Applications of neutron reflectometry in biology

2020 ◽  
Vol 236 ◽  
pp. 04002 ◽  
Author(s):  
Yuri Gerelli
Keyword(s):  
Thin Films ◽  
Structural Features ◽  
Neutron Reflectometry ◽  
Protein Films ◽  
Biologically Relevant ◽  
Buried Interfaces ◽  
Biological Thin Films ◽  
Non Destructive

Over the last 10 years, neutron reflectometry (NR) has emerged as a powerful technique for the investigation of biologically relevant thin films. The great advantage of NR with respect to many other surface-sensitive techniques is its sub-nanometer resolution that enables structural characterizations at the molecular level. In the case of bio-relevant samples, NR is non-destructive and can be used to probe thin films at buried interfaces or enclosed in bulky sample environment equipment. Moreover, recent advances in biomolecular deutera-tion enabled new labeling strategies to highlight certain structural features and to resolve with better accuracy the location of chemically similar molecules within a thin film. In this chapter I will describe some applications of NR to bio-relevant samples and discuss some of the data analysis approaches available for biological thin films. In particular, examples on the structural characterization of biomembranes, protein films and protein-lipid interactions will be described.

scholarly journals Kinetics and mechanisms of stress relaxation in sputtered silver thin films

2021 ◽  
pp. 117385
Author(s):  
Quentin Hérault ◽  
Iryna Gozhyk ◽  
Matteo Balestrieri ◽  
Hervé Montigaud ◽  
Sergey Grachev ◽  
...  
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Silver Thin Films
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