Characterization of the Solid-Phase Epitaxial Growth of Amorphized Gaas with In-Situ Electron Microscopy

1996 ◽  
Vol 421 ◽  
Author(s):  
K. B. Belay ◽  
M. C. Ridgway ◽  
D. J. Llewellyn
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ex Situ ◽  
In Situ Tem ◽  
Recrystallization Process ◽  
Time Resolved ◽  
Rich Material

AbstractThe influence of non-stoichiometry on the solid-phase epitaxial growth of amorphized GaAs has been studied with in-situ Transmission Electron Microscopy (TEM). Ion-implantation has been used to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. It has been demonstrated that amorphous GaAs recrystallizes into a thin single-crystal layer and a thick heavily twinned layer. Video images of the recrystallization process have been quantified for the first time to study the velocity of the crystalline/amorphous (c/a)-interface as a function of depth and ion species. Regrowth rates of the single crystal and twinned layers as functions of non-stoichiometry have been calculated. The phase transformation is rapid in Ga-rich material. In-situ TEM results are consistent with conventional in-situ Time Resolved Reflectivity, ex-situ Rutherford Backscattering Spectroscopy and Channelling measurements and ex-situ TEM.

In-Situ Transmission Electron Microscopy of the Solid-Phase Epitaxial Growth of GaAs: Sample Preparation and Artifact Characterization

1997 ◽  
Vol 480 ◽  
Author(s):  
K. B. Belay ◽  
M. C. Ridgway ◽  
D. J. Llewellyn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ion Beam ◽  
Ex Situ ◽  
In Situ Tem ◽  
Transmission Electron

AbstractIn-situ transmission electron microscopy (TEM) has been used to characterize the solidphase epitaxial growth of amorphized GaAs at a temperature of 260°C. To maximize heat transfer from the heated holder to the sample and minimize electron-irradiation induced artifacts, non-conventional methodologies were utilized for the preparation of cross-sectional samples. GaAs (3xI) mm rectangular slabs were cut then glued face-to-face to a size of (6x3) mm stack by maintaining the TEM region at the center. This stack was subsequently polished to a thickness of ~ 200 ýtm. A 3 mm disc was then cut from it using a Gatan ultrasonic cutter. The disc was polished and dimpled on both sides to a thickness of ~15 mimT.h is was ion-beam milled at liquid nitrogen temperature to an electron-transparent layer. From a comparison of in-situ and ex-situ measurements of the recrystallization rate, the actual sample temperature during in-situ characterization was estimated to deviate by ≤ 20°C from that of the heated holder. The influence of electron-irradiated was found to be negligible by comparing the recrystallization rate and microstructure of irradiated and unirradiated regions of comparable thickness. Similarly, the influence of “thin-foil effect” was found to be negligible by comparing the recrystallization rate and microstructure of thick and thin regions, the former determined after the removal of the sample from the microscope and further ion-beam milling of tens of microns of material. In conclusion, the potential influence of artifacts during in-situ TEM can be eliminated by the appropriate choice of sample preparation procedures.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

scholarly journals Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

1996 ◽  
Vol 441 ◽  
Author(s):  
William Barvosa-Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Solid Phase ◽  
Hydrostatic Stress ◽  
Uniaxial Stress ◽  
Cross Sectional ◽  
Time Resolved ◽  
Crystal Interface

AbstractWe report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

In Situ TEM Heating Study of the γ Lamellae Formation inside the α2 Matrix of a Ti-45Al-7.5Nb Alloy

2010 ◽  
Vol 146-147 ◽  
pp. 1365-1368 ◽  
Author(s):  
Li Mei Cha ◽  
Helmut Clemens ◽  
Gerhard Dehm ◽  
Zao Li Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ex Situ ◽  
In Situ Tem ◽  
Transmission Electron ◽  
Initial Stage ◽  
Heat Treated ◽  
The Matrix ◽  
In Situ Heating

In-situ heating transmission electron microscopy (TEM) was employed to investigate the initial stage of lamellae formation in a high Nb containing γ-TiAl based alloy. A Ti-45Al-7.5Nb alloy (at %), which was heat treated and quenched in a non-equilibrium state such that the matrix consists of ordered a2 grains, was annealed inside a TEM up to 750 °C. The in-situ TEM study reveals that g laths precipitate in the a2 matrix at ~ 750 °C possessing the classical Blackburn orientation relationship, i.e. (0001)a2 // (111)g and [11-20]a2 // <110]g. The microstructure of the in-situ TEM experiment is compared to results from ex-situ heating and subsequent TEM studies.

A Study of Substrate Orientation Dependence of the Solid-Phase Epitaxial Growth of Amorphised GaAs

1998 ◽  
Vol 523 ◽  
Author(s):  
K. B. Belay ◽  
D. J. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Orientation Dependence ◽  
Ex Situ ◽  
Cross Sectional ◽  
Substrate Orientation

AbstractIn-situ transmission electron microscopy (TEM) has been utilized in conjunction with conventional ex-situ Rutherford backscattering spectrometry and channeling (RBS/C), in-situ time resolved reflectivity (TRR) and ex-situ TEM to study the influence of substrate orientation on the solid-phase epitaxial growth (SPEG) of amorphised GaAs. A thin amorphous layer was produced on semi-insulating (100), (110) and (111) GaAs substrates by ion implantation of 190 and 200 keV Ga and As ions, respectively, to a total dose of 1e14/cm2. During implantation, substrates were maintained at liquid nitrogen temperature. In-situ annealing at ∼260°C was performed in the electron microscope and the data obtained was quantitatively analysed. It has been demonstrated that the non-planarity of the crystalline-amorphous (c/a)-interface was greatest for the (111) substrate orientation and least for the (110) substrate orientation. The roughness was measured in terms of the length of the a/c-interface in given window as a function of depth on a frame captured from the recorded video of the in-situ TEM experiments. The roughness of the c/a-interface was determined by the size of the angle subtended by the microtwins with respect to the interface on ex-situ TEM cross-sectional micrographs. The angle was both calculated and measured and was the largest in the case of (111) plane. The twinned fraction as a function of orientation, was calculated in terms of the disorder measured from the RBS/C and it was greatest for the (111) orientation.

Cross-sectional time-resolved high-resolution electron microscopy of epitaxial growth of Au on MgO

1996 ◽  
Vol 54 ◽  
pp. 982-983
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Epitaxial Growth ◽  
High Resolution Electron Microscopy ◽  
Vacuum Deposition ◽  
Cross Sectional ◽  
Time Resolved ◽  
Plan View ◽  
Resolution Electron

Vapor phase epitaxial growth techniques are indispensable for production of thin film electric devices. Various structural analyses have been attempted to evaluate the epitaxial growth. Conventional transmission electron microscopy (CTEM) is a most useful method. In particular, it is known that a plan-view time-resolved CTEM of in-situ vacuum-deposition in a microscope can analyze each process of epitaxial growth. The nucleation in vacuum-deposition was also in-situ observed by a time-resolved high resolution electron microscopy (TRHREM). However many unresolved problems still remain in the studies of the epitaxial growth because it is difficult to observe the epitaxial interfaces less than a few nanometer under appropriate conditions. Much more advanced techniques are required for electron microscopy to obtain detailed information.In the present study, a TRHREM for the cross-sectional observation was developed to elucidate the epitaxial growth process in vacuum-deposition.Gold (Au) was vacuum-deposited on (001) surfaces of the magnesium oxide (MgO) substrates at room temperature in a specimen chamber of a 200-kV high-resolution electron microscope (JEOL, JEM2010).

Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon

1994 ◽  
Vol 356 ◽  
Author(s):  
William B. Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Cross Section ◽  
Solid Phase ◽  
Quantitative Agreement ◽  
Ex Situ ◽  
Time Resolved ◽  
Stress Effects ◽  
Crystal Interface

AbstractThe dependence of solid phase epitaxial growth in Si on uniaxial compression applied perpendicular to the amorphous-crystal interface is investigated. Long, thin pure Si bars of square cross section are ion-implanted to produce amorphous layers on the end faces. The bars are placed end-to-end and uniaxially loaded at temperature to partially regrow the amorphous layers. The resulting growth rates are measured ex situ by re-heating the samples on a hot stage and using time-resolved reflectivity to deduce interface depths. Preliminary results are that uniaxial compression is more effective than hydrostatic pressure for enhancing the growth rate, in qualitative but not quantitative agreement with previously made predictions.

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