scholarly journals Mechanical Properties of 3C-SiC Films for MEMS Applications

2007 ◽  
Vol 1049 ◽  
Author(s):  
Jayadeep Deva Reddy ◽  
Alex A. Volinsky ◽  
Christopher L. Frewin ◽  
Chris Locke ◽  
Stephen E. Saddow
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Plastic Deformation ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Elastic Contact ◽  
Si Substrates ◽  
Sic Films

AbstractThere is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 μm. Under indentation loads below 500 μN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 GPa and hardness of 33.5 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 GPa and 31.2 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.

scholarly journals 3C-SiC Films on Si for MEMS Applications: Mechanical Properties

2009 ◽  
Vol 615-617 ◽  
pp. 633-636 ◽  
Author(s):  
Christopher Locke ◽  
G. Kravchenko ◽  
P. Waters ◽  
J. D. Reddy ◽  
K. Du ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Small Degree ◽  
Film Stress ◽  
Si Substrate ◽  
Plastic Properties ◽  
Si Substrates ◽  
High Residual Stress ◽  
Mems Cantilevers ◽  
Sic Films

Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3C-SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates were measured by means of nanoindentation using a Berkovich diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging. MEMS cantilevers and membranes fabricated from a 2 µm thick single crystal 3C-SiC grown on (100)Si under similar conditions resulted in a small degree of bow with only 9 µm of deflection for a cantilever of 700 µm length with an estimated tensile film stress of 300 MPa. Single crystal 3C-SiC films on (111)Si substrates have the highest elastic and plastic properties, although due to high residual stress they tend to crack and delaminate.

scholarly journals Nanoindentation of Silicate Low-K Dielectric Thin Films

2002 ◽  
Vol 716 ◽  
Author(s):  
Joseph B. Vella ◽  
Alex A. Volinsky ◽  
Indira S. Adhihetty ◽  
N.V. Edwards ◽  
William W. Gerberich
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Dielectric Constant ◽  
Elastic Modulus ◽  
Percolation Theory ◽  
Scratch Testing ◽  
Dielectric Thin Films ◽  
Cube Corner ◽  
Low K

AbstractThe capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fracture toughness calculations are also discussed.

Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests

1994 ◽  
Vol 9 (1) ◽  
pp. 96-103 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker ◽  
A. Jean ◽  
S. Boily ◽  
J.C. Kieffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Silicon Carbide ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Free Standing ◽  
Film Composition ◽  
Sputtering Deposition ◽  
Sic Films

Due to its interesting mechanical properties, silicon carbide is an excellent material for many applications. In this paper, we report on the mechanical properties of amorphous hydrogenated or hydrogen-free silicon carbide thin films deposited by using different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD), laser ablation deposition (LAD), and triode sputtering deposition (TSD). a-SixC1−x: H PECVD, a-SiC LAD, and a-SiC TSD thin films and corresponding free-standing membranes were mechanically investigated by using nanoindentation and bulge techniques, respectively. Hardness (H), Young's modulus (E), and Poisson's ratio (v) of the studied silicon carbide thin films were determined. It is shown that for hydrogenated a-SixC1−x: H PECVD films, both hardness and Young's modulus are dependent on the film composition. The nearly stoichiometric a-SiC: H films present higher H and E values than the Si-rich a-SixC1−x: H films. For hydrogen-free a-SiC films, the hardness and Young's modulus were as high as about 30 GPa and 240 GPa, respectively. Hydrogen-free a-SiC films present both hardness and Young's modulus values higher by about 50% than those of hydrogenated a-SiC: H PECVD films. By using the FTIR absorption spectroscopy, we estimated the Si-C bond densities (NSiC) from the Si-C stretching absorption band (centered around 780 cm−1), and were thus able to correlate the observed mechanical behavior of a-SiC films to their microstructure. We indeed point out a constant-plus-linear variation of the hardness and Young's modulus upon the Si-C bond density, over the NSiC investigated range [(4–18) × 1022 bond · cm−3], regardless of the film composition or the deposition technique.

An investigation of nanoindentation tests on the single crystal copper thin film via an atomic force microscope and molecular dynamics simulation

2007 ◽  
Vol 221 (2) ◽  
pp. 259-266 ◽  
Author(s):  
D Huo ◽  
Y Liang ◽  
K Cheng
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Plastic Deformation ◽  
Size Effect ◽  
Single Crystal ◽  
Atomic Force Microscope ◽  
Md Simulations ◽  
Single Crystal Copper ◽  
Atomic Force

Nanoindentation tests performed in an atomic force microscope have been utilized to directly measure the mechanical properties of single crystal metal thin films fabricated by the vacuum vapour deposition technique. Nanoindentation tests were conducted at various indentation depths to study the effect of indentation depths on the mechanical properties of thin films. The results were interpreted by using the Oliver-Pharr method with which direct observation and measurement of the contact area are not required. The elastic modulus of the single crystal copper film at various indentation depths was determined as 67.0 > 6.9 GPa on average, which is in reasonable agreement with the results reported by others. The indentation hardness constantly increases with decreasing indentation depth, indicating a strong size effect. In addition to the experimental work, a three-dimensional nanoindentation model of molecular dynamics (MD) simulations with embedded atom method (EAM) potential is proposed to elucidate the mechanics and mechanisms of nanoindentation of thin films from the atomistic point of view. MD simulations results show that due to the size effect no distinct dislocations were observed in the plastic deformation processes of the single crystal copper thin films, which is significantly different from the plastic deformation mechanism in bulk materials.

Percolation Effects in the Mechanical Properties of Granular Ni-A12O3 thin films

1990 ◽  
Vol 195 ◽  
Author(s):  
T.E. Schlesinger ◽  
A. Gavrin ◽  
R.C. Cammarata ◽  
C.-L. Chien
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Plastic Deformation ◽  
Magnetic Properties ◽  
Percolation Threshold ◽  
Volume Fraction ◽  
Electrical And Magnetic Properties ◽  
Low Load

ABSTRACTThe mechanical properties of sputtered Ni-Al2O3 granular thin films were investigated by low load microharaness testing. It was found that the microhardness of these films displayed a percolation threshold at a nickel volume fraction of about 0.6, below which the hardness is greatly enhanced. This behavior is qualitatively similar to the electrical and magnetic properties of these types of films. A percolation threshold in hardness can be understood as due to a change in the mechanism for plastic deformation.

Reverse Plasticity in Nanoindentation

2007 ◽  
Vol 1049 ◽  
Author(s):  
Yongjiang Huang ◽  
Nursiani Indah Tjahyono ◽  
Jun Shen ◽  
Yu Lung Chiu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Glass Transition ◽  
Single Crystal ◽  
Metallic Glasses ◽  
Deformation Mechanisms ◽  
Glass Transition Temperatures ◽  
Loading Rates ◽  
Nanoindentation Experiment ◽  
Properties Of Materials

AbstractThis paper summarises our recent cyclic nanoindentation experiment studies on a range of materials including single crystal and nanocrystalline copper, single crystal aluminium and bulk metallic glasses with different glass transition temperatures. The unloading and reloading processes of the nanoindentation curves have been analysed. The reverse plasticity will be discussed in the context of plastic deformation mechanisms involved. The effect of loading rates on the mechanical properties of materials upon cyclic loading will also be discussed.

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

scholarly journals Structural and Mechanical Properties of Nanostructured C-Ag Thin Films Synthesized by Thermionic Vacuum Arc Method

2018 ◽  
Vol 2018 ◽  
pp. 1-10 ◽  
Author(s):  
Rodica Vladoiu ◽  
Aurelia Mandes ◽  
Virginia Dinca-Balan ◽  
Vilma Bursikova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Modulus ◽  
Silicon Substrate ◽  
Vacuum Arc ◽  
Average Roughness ◽  
Thermionic Vacuum Arc ◽  
Induced Aggregation ◽  
Ag Film

Nanostructured C-Ag thin films of 200 nm thickness were successfully synthesized by the Thermionic Vacuum Arc (TVA) method. The influence of different substrates (glass, silicon wafers, and stainless steel) on the microstructure, morphology, and mechanical properties of nanostructured C-Ag thin films was characterized by High-Resolution Transmission Electron Microscopy (HRTEM), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and TI 950 (Hysitron) nanoindenter equipped with Berkovich indenter, respectively. The film’s hardness deposited on glass (HC-Ag/Gl = 1.8 GPa) was slightly lower than in the case of the C-Ag film deposited on a silicon substrate (HC-Ag/Si = 2.2 GPa). Also the apparent elastic modulus Eeff was lower for C-Ag/Gl sample (Eeff = 100 GPa) than for C-Ag/Si (Eeff = 170 GPa), while the values for average roughness are Ra=2.9 nm (C-Ag/Si) and Ra=10.6 (C-Ag/Gl). Using the modulus mapping mode, spontaneous and indentation-induced aggregation of the silver nanoparticles was observed for both C-Ag/Gl and C-Ag/Si samples. The nanocomposite C-Ag film exhibited not only higher hardness and effective elastic modulus, but also a higher fracture resistance toughness to the silicon substrate compared to the glass substrate.

Fabrication of Carbon Nanotube Reinforced Boron Carbide Composite by Hot-Pressing Following Extrusion Molding

2014 ◽  
Vol 616 ◽  
pp. 27-31 ◽  
Author(s):  
Tomohiro Kobayashi ◽  
Katsumi Yoshida ◽  
Toyohiko Yano
Keyword(s):  
Mechanical Properties ◽  
Fracture Toughness ◽  
Elastic Modulus ◽  
Carbon Nanotube ◽  
Boron Carbide ◽  
Vickers Hardness ◽  
Hot Pressing ◽  
Bending Strength ◽  
Extrusion Direction ◽  
Sem Observation

The CNT/B4C composite with Al2O3 additive was fabricated by hot-pressing following extrusion molding of a CNT/B4C paste, and mechanical properties of the obtained composite were investigated. Many CNTs in the composite aligned along the extrusion direction from SEM observation. 3-points bending strength of the composite was slightly lower than that of the monolithic B4C. Elastic modulus and Vickers hardness of the composite drastically decreased with CNT addition. Fracture toughness of the composite was higher than that of the monolithic B4C.

scholarly journals Low-temperature degradation resistance and plastic deformation of ATZ ceramics stabilized by CaO

2021 ◽  
Vol 2103 (1) ◽  
pp. 012075
Author(s):  
AA Dmitrievskiy ◽  
DG Zhigacheva ◽  
VM Vasyukov ◽  
PN Ovchinnikov
Keyword(s):  
Mechanical Properties ◽  
Fracture Toughness ◽  
Plastic Deformation ◽  
Compressive Strength ◽  
Phase Composition ◽  
Low Temperature ◽  
Uniaxial Compression ◽  
Calcium Oxide ◽  
Tetragonal Phase ◽  
Room Temperature

Abstract In this work, the phase composition (relative fractions of monoclinic m-ZrO2, tetragonal t-ZrO2, and cubic c-ZrO2 phases) and mechanical properties (hardness, fracture toughness, compressive strength) of alumina toughened zirconia (ATZ) ceramics, with an addition of silica were investigated. Calcium oxide was used as a stabilizer for the zirconia tetragonal phase. It was shown that CaO-ATZ+SiO2 ceramics demonstrate increased resistance to low-temperature degradation. The plasticity signs at room temperature were found due to the SiO2 addition to CaO-ATZ ceramics. A yield plateau appears in the uniaxial compression diagram at 5 mol. % SiO2 concentration. It is hypothesized that discovered plasticity is due to the increased t→m transformability.

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