High quality GdSil.7 layers formed by high dose channeled implantation

1996 ◽  
Vol 427 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche ◽  
H. Bender
Keyword(s):  
Ion Beam ◽  
Hexagonal Phase ◽  
Hexagonal Structure ◽  
High Dose ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Better Than

AbstractThin gadolinium silicide layers have been formed by channeled ion beam synthesis. Continuous and heteroepitaxial GdSil.7 layers with a hexagonal structure and a χmin value of 10% are prepared by Gd ion implantation at 90 keV to a dose of 1.3x1017/cm2 at 450°C in Si(111) using channeled implantation. The hexagonal phase of GdSi1.7 is stable up to a temperature of 850°C. Both the crystalline quality and the phase stability are much better than the results obtained by conventional techniques. Annealing at > 900°C suddenly changes the χmin value of the silicide layer from 10% to 100%. X-ray diffraction shows that the phase has changed to orthorhombic. RBS/channeling, x-ray diffraction and transmission electron microscopy are used in this study.

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

The X-Ray Powder Diffraction Patterns and Crystal Structure for Al2M3Y(M=Cu, Ni)

2014 ◽  
Vol 950 ◽  
pp. 48-52
Author(s):  
De Gui Li ◽  
Ming Qin ◽  
Liu Qing Liang ◽  
Zhao Lu ◽  
Shu Hui Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Powder Diffraction ◽  
Diffraction Data ◽  
Hexagonal Structure ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Arc Melting ◽  
Diffraction Patterns

The Al2M3Y(M=Cu, Ni) compound was synthesized by arc melting under argon atmosphere. The high-quality powder X-ray diffraction data of Al2M3Y have been presented. The refinement of the X-ray diffraction patterns for the Al2M3Y compound show that the Al2M3Y has hexagonal structure, space groupP6/mmm(No.191), with a = b = 5.1618(2) Å, c = 4.1434(1) Å,V= 95.6 Å3,Z= 1,ڑx= 5.7922 g/cm3,F30= 155.5(0.0057, 34), RIR = 2.31 for Al2Cu3Y, and with a = b = 5.0399(1) Å, c = 4.0726(1) Å,V= 89.59 Å3,Z= 1,ڑx= 5.9118 g/cm3,F30= 135.7(0.0072, 30), RIR = 2.54 for Al2Ni3Y.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

Single-molecule precursor-based approaches to cobalt sulphide nanostructures

2010 ◽  
Vol 368 (1927) ◽  
pp. 4249-4260 ◽  
Author(s):  
Karthik Ramasamy ◽  
Weerakanya Maneerprakorn ◽  
Mohammad A. Malik ◽  
Paul O'Brien
Keyword(s):  
Electron Microscopy ◽  
Single Molecule ◽  
Size Range ◽  
Hexagonal Phase ◽  
Cobalt Complexes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cobalt Sulphide ◽  
Microscopy Images

Cobalt complexes of 1,1,5,5-tetramethyl-2,4-dithiobiuret, [Co{N(SCNMe 2 ) 2 } 3 ] ( 1 ), and 1,1,5,5-tetraisopropyl-2-thiobiuret, [Co{N(SOCN i Pr 2 ) 2 } 2 ] ( 2 ), have been synthesized and characterized. Both complexes were used as single-molecule precursors for the preparation of cobalt sulphide nanoparticles by thermolysis in hexadecylamine, octadecylamine or oleylamine. The powder X-ray diffraction pattern of as-prepared nanoparticles showed the hexagonal phase of Co 1− x S from complex 1 and mixtures of cubic and hexagonal Co 4 S 3 from complex 2 . Transmission electron microscopy images of material prepared from complex 1 showed spherical and trigonally shaped particles in the size range of 10–15 nm; whereas spheres, rods, trigonal prisms and pentagonally and hexagonally faceted crystallites were observed from complex 2 . This observation is the first of the Co 4 S 3 phase in a nanodispersed form.

Hydrothermal Synthesis of Hexagonal Phase Zn1-XMnxS (x = 0–0.05) Nanorods Using Single-Source Precursors

2010 ◽  
Vol 663-665 ◽  
pp. 100-103
Author(s):  
Zhen Ni Du ◽  
Yong Cai Zhang ◽  
Zhi You Xu ◽  
Ming Zhang
Keyword(s):  
Electron Microscopy ◽  
Aqueous Solution ◽  
Transmission Electron Microscopy ◽  
Hydrothermal Synthesis ◽  
Diffuse Reflectance ◽  
Hexagonal Phase ◽  
Single Source ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

The synthesis of hexagonal phase Zn1-xMnxS (x = 0–0.05) nanorods was achieved by hydrothermal treatment of zinc manganese diethyldithiocarbamates (Zn1-xMnx-(DDTC)2, x=0–0.05) in 40 mass % hydrate hydrazine aqueous solution at 180 °C for 12 h. The structure, composition and optical property of the obtained products were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, transmission electron microscopy and UV-vis diffuse reflectance spectra.

Characterization of Zn0.96Al0.02Ga0.02O Thermoelectric Material

2013 ◽  
Vol 802 ◽  
pp. 227-231
Author(s):  
Panida Pilasuta ◽  
Pennapa Muthitamongkol ◽  
Chanchana Thanachayanont ◽  
Tosawat Seetawan
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Single Phase ◽  
Hexagonal Structure ◽  
Hexagonal Crystal Structure ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Transmission Electron

Crystal structure of Zn0.96Al0.02Ga0.02O was analyzed by X-Ray diffraction (XRD) technique and the microstructure was observed by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD results showed single phase and hexagonal structure a = b = 3.24982 Å, and c = 5.20661 Å. The SEM and TEM results showed the grain size of material arrangement changed after sintering and TEM diffraction pattern confirmed hexagonal crystal structure of Zn0.96Al0.02Ga0.02O after sintering.

Ion Beam Synthesis of Buried CoxNi1−xSi2 Layers in Silicon

1993 ◽  
Vol 320 ◽  
Author(s):  
M.F. Wu ◽  
J. De Wachter ◽  
A.-M. Van Bavel ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Ion Beam ◽  
Type A ◽  
Type B ◽  
X Ray Diffraction ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Unique Distribution ◽  
Buried Layers

ABSTRACTHeteroepitaxial CoxNi1−xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Growth and Characterization of Misostructural Zinc Oxide Tubes

2005 ◽  
Vol 23 ◽  
pp. 293-296
Author(s):  
X.W. Sun ◽  
C.X. Xu ◽  
B.J. Chen ◽  
Y. Yang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Zinc Oxide ◽  
Growth Process ◽  
Hexagonal Structure ◽  
Metallic Zinc ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Zinc oxide (ZnO) microtube has been fabricated by heating the mixture of ZnO and graphite powders in the atmosphere. The ZnO microtubes showed perfect hexagonal profiles with bell-mouth or normal hexagonal tops. Both X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) demonstrated that the product was composed of ZnO with typical hexagonal structure grown predominantly along (002) direction. The growth process was interpreted by means of vaporliquid-solid mechanism combining with the evaporation of metallic zinc.

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