scholarly journals Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

2021 ◽  
Vol 2119 (1) ◽  
pp. 012121
Author(s):  
I E Merkulova
Keyword(s):  
Grain Size ◽  
Thermal Annealing ◽  
Xrd Analysis ◽  
Synthesis Temperature ◽  
Sem Images ◽  
Polycrystalline Aluminum ◽  
Plasma Sputtering ◽  
Average Grain Size ◽  
Before And After ◽  
Thin Polycrystalline

Abstract The thin polycrystalline aluminium films were synthesized on monocrystalline silicon substrates by ion-plasma sputtering. The synthesis was carried out at temperatures of 80 and 160°C and deposition rate of 10 and 110 nm/min. As-deposited films were annealed for 15 h at 550°C. The morphology of aluminium films before and after annealing was obtained using SEM images. The surfaces of as-deposited Al thin films, synthesized at high temperature, were uneven, while for low temperature films they were smooth enough with Al hillocks on the top of the film. After thermal annealing, morphology of the films was changed slightly. XRD patterns were obtained to calculate the average Al grain size of as-deposited and annealed films. The XRD analysis showed that an increase in the synthesis temperature leads to an increase in the average grain size from 50 to 84 nm and that increase in the rate of Al film synthesis leads to an increase in the average grain size from 50 to 63 nm. As the result of annealing, the average grain size increased for all samples and the final meaning was from 78 to 140 nm.

ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

Structural-Phase State of UFG-Titanium Implanted with Aluminum Ions

2020 ◽  
Vol 303 ◽  
pp. 161-168
Author(s):  
Alisa V. Nikonenko ◽  
Natalya A. Popova ◽  
E.L. Nikonenko ◽  
M.P. Kalashnikov ◽  
I.A. Kurzina
Keyword(s):  
Grain Size ◽  
Yield Stress ◽  
Phase State ◽  
Structural Phase ◽  
Ion Source ◽  
Anisotropy Factor ◽  
Structural Phase State ◽  
Aluminum Ions ◽  
Average Grain Size ◽  
Before And After

Transmission electron microscopy investigations were carried out to study the structural-phase state of ultra-fine grain (UFG) titanium with the average grain size of ~0.2 μm, implanted with aluminum ions. Implantation was carried out on MEVVA-V.RU ion source at room temperature, exposure time of 5.25 h and ion implantation dosage of 1⋅1018 ion/cm2. UFG-titanium was obtained by a combined multiple uniaxial compaction with rolling in grooved rolls and further annealing at 573 К for 1h. The specimens were investigated before and after implantation at a distance of 70-100 nm from the specimen surface. Concentration profile of aluminum implanted with α-Ti was obtained. It was revealed that the thickness of implanted layer was 200 nm, while maximum aluminum concentration was 70 at.%. Implantation of aluminum into titanium has resulted in formation of the whole number of phases having various crystal lattices, like β-Ti, TiAl3, Ti3Al, TiC and TiO2. The areas of their localization, the sizes, distribution density and volume fractions were determined. Grain distribution functions by their sizes were built, and the average grain size was defined. The paper investigates the influence of implantation on the grain anisotropy factor. It was revealed that implantation leads to the decrease in the average transverse and longitudinal grain size of α-Ti and decrease in the anisotropy factor by three times. The yield stress and contributions of separate strengthening mechanisms before and after implantation were calculated. The implantation has resulted in increase in the yield stress by two times.

Autothermal Gelation Synthesis of Uniform Titania Nanoparticles

2010 ◽  
Vol 148-149 ◽  
pp. 1188-1191
Author(s):  
Xi Xin Wang ◽  
Jian Ling Zhao ◽  
Zhao Hui Meng ◽  
Jia Wei Yan
Keyword(s):  
Grain Size ◽  
Tio2 Nanoparticles ◽  
Anatase Phase ◽  
Xrd Analysis ◽  
Rutile Phase ◽  
Titania Nanoparticles ◽  
Gelation Process ◽  
Average Grain Size ◽  
Process Effects ◽  
20 Nm

Titania nanoparticles were successfully synthesized through an easily controlled and simple autothermal gelation process. Effects of H2O2 concentrations, solvent quantity and dissolving temperature were investigated in detail. DSC–TGA and XRD analysis showed that the synthesized TiO2 nanoparticles were in anatase phase at 400°C and in rutile phase at 650°C. TEM image indicated that the titania nanoparticles were uniform and approximately spherical, the average grain size of the product was about 20 nm.

scholarly journals Studies on Electric and Dielectric Properties of Porous Sm0.5Sr0.5CoO3−δ

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. S. Pawar ◽  
K. P. Shinde ◽  
A. G. Bhosale ◽  
S. H. Pawar
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Grain Size ◽  
Dielectric Properties ◽  
Xrd Analysis ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Space Group ◽  
Average Grain Size ◽  
Scanning Electron

Frequency-dependent electric and dielectric properties of the porous Sm0.5Sr0.5CoO3−δ cathode prepared through conventional combustion synthesis technique were studied in the temperature range 298 K–973 K. The crystal symmetry, space group, and unit cell dimensions were confirmed by analyzing XRD pattern. XRD analysis indicates the formation of a single-phase orthorhombic structure with space group Pnma 62. Scanning electron microscopy technique was used to examine the morphology of the sample. Scanning electron microscopy study showed the formation of porous structure with an average grain size about 850 nm. From the electrical study, it is observed that the conduction in Sm0.5Sr0.5CoO3−δ sample takes place through the hopping mechanism and follows the inverse universal power law. The correlated barrier hopping model was employed successfully to explain the mechanism of charge transport in Sm0.5Sr0.5CoO3−δ. Further, the ac conductivity data was used to evaluate the minimum hopping length and apparent activation energy. The minimum hopping length was found to be ~10−4 times smaller than the grain size of Sm0.5Sr0.5CoO3−δ. The peaking behaviour of the real part of dielectric constant with frequency was explained using the Rezlescu model. This study helps to confirm that the charge transportation in Sm0.5Sr0.5CoO3−δ is due to two types of charge carriers.

Properties of Hexagonal Wurtzite Mg0.33Zn0.67O Films on Quartz Glass Substrates

2011 ◽  
Vol 337 ◽  
pp. 612-615
Author(s):  
Quan Sheng Liu ◽  
Xi Yan Zhang ◽  
Xiao Chun Wang ◽  
Zhao Hui Bai ◽  
Neng Li Wang ◽  
...  
Keyword(s):  
Grain Size ◽  
Absorption Spectrum ◽  
Quartz Glass ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Excitation Peak ◽  
Lattice Constants ◽  
Glass Substrates ◽  
Average Grain Size

Mg0.33Zn0.67Ofilms were prepared on quartz glass substrates by Sol-Gel method. Structures and optical properties of Mg0.33Zn0.67Ofilms were studied. The results of XRD analysis indicates that the Mg0.33Zn0.67Ofilm is hexagonal wurtzite structure and the lattice constants a and c are 0.3265nm and 0.5218 nm respectively. Lattice constants a and c of the Mg0.33Zn0.67O film increased because of the addition of Mg. The image of SEM shows that the Mg0.33Zn0.67O film is homogeneous and its average grain size is about 40nm. The absorption spectrum of the sample reveals that the absorption edge of Mg0.33Zn0.67O film located at 312.3nm and the corresponding forbidden band width is 3.97eV. is by three peaks ，which located at 383.9nm，442.6nm and 532.9nm respectively，constitute the luminescence spectrum of the film. The excitation peak located at 379.9nm.

Electromigration Damage Studied by 1/f Noise

1996 ◽  
Vol 428 ◽  
Author(s):  
K. Dagge
Keyword(s):  
High Resolution ◽  
Spectral Density ◽  
Nucleation And Growth ◽  
Polycrystalline Aluminum ◽  
Noise Component ◽  
Aluminum Films ◽  
Before And After ◽  
Noise Measurements ◽  
Thin Polycrystalline ◽  
Dc Stress

AbstractThin polycrystalline aluminum films were investigated by high-resolution ac noisemeasurements before and after damaging by high direct current. Immediately after the interruption of the dc-stress a transient noise component was observed that was inversely proportional to the square of the frequency f (1/f2 -noise). It was caused by discrete jumps in the resistance presumably due to the relaxation of mechanical stress. The second component of noise was stable and in all cases approximately proportional to 1/f. The spectral density of 1/f-noise showed characteristic discrete steps as a function of damaging time, in contrast to the resistance which increased almost continuously up to the failure of the film. This indicates that nucleation-and-growth processes of mobile defects were observed in the noise measurements. Thus noise measurements might help to understand the microscopic process of electromigration.

Synthesis of Corrugated Structured N Type Pbs Thin Film

2012 ◽  
Vol 500 ◽  
pp. 118-122 ◽  
Author(s):  
E.I. Anila ◽  
K.J. Saji ◽  
U.S. Sajeev
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Xrd Analysis ◽  
Dip Coating ◽  
Pbs Nanoparticles ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Type Band ◽  
Corrugated Structure ◽  
Power Measurements

PbS thin films with corrugated structure were synthesized on glass substrates by dip coating. The surface of the films was found to be corrugated. XRD analysis confirmed the formation of crystalline PbS nanoparticles with average grain size 14nm. From thermo power measurements, the conductivity of the samples was found to be of n type. Band gap of the films was estimated as 1.7eV from absorption spectra.

Effect of Small Addition of Si on Superplastic Elongation at Room Temperature in Zn-Al Eutectoid Superplastic Alloy

2014 ◽  
Vol 922 ◽  
pp. 328-331 ◽  
Author(s):  
Yuhei Kamiya ◽  
Masaki Ninomiya ◽  
Tokuteru Uesugi ◽  
Yorinobu Takigawa ◽  
Kenji Higashi
Keyword(s):  
Grain Size ◽  
Strain Rate ◽  
Room Temperature ◽  
Tensile Tests ◽  
Al Alloy ◽  
Superplastic Behavior ◽  
Superplastic Alloy ◽  
Average Grain Size ◽  
Before And After ◽  
Si Content

Recent experimental data have revealed that a small amount of impurity can significantly influence the superplastic behavior in Zn-Al eutectoid superplastic alloy. However, the effect of Si content on the superplastic behavior in Zn-Al alloy has not been reported. In this study, the superplastic behavior at a room temperature of two grades of the Zn-Al eutectoid superplastic alloy was studied under identical conditions of grain size, temperature, and strain rate. These two grades were prepared from high-purity Zn, Al and Al-Si alloy using the same procedure but different Si impurity levels; Zn-Al-10Si and Zn-Al-1000Si contain 10 and 900 wt. ppm of Si, respectively. As a result of annealing treatments, an average grain size of 0.6 μm in both grades. To investigate the effects of Si content on superplastic properties, the tensile tests were performed at a room temperature of 298 K and a constant strain rate of 1×10-3 s-1. Microstructures before and after the tensile tests was observed using a scanning electron microscope. The experimental results show that the elongations decreased with increasing the Si content. In contrast, the flow stress of Zn-Al alloys was not affected by the Si content. On the microstructure observation of the two grades of the Zn-Al alloy before and after the tensile tests, cavities existed at grain boundaries and strain enhanced grain growth was observed.

scholarly journals Synthesis and study of structural properties of Sn doped ZnO nanoparticles

2016 ◽  
Vol 34 (4) ◽  
pp. 741-746 ◽  
Author(s):  
M. Arshad Javid ◽  
M. Rafi ◽  
Ihsan Ali ◽  
Fayyaz Hussain ◽  
M. Imran ◽  
...  
Keyword(s):  
Grain Size ◽  
Xrd Analysis ◽  
Zinc Nitrate ◽  
Sn Doping ◽  
Chemical Solution Method ◽  
Average Grain Size ◽  
Extra Peak ◽  
Doped Zno ◽  
Zno Powder

AbstractPure and Sn-doped ZnO nanostructures were synthesized by simple chemical solution method. In this method we used zinc nitrate and NaOH as precursors. Sn doping content in ZnO was taken with the ratio 0, 5, 10, 15 and 20 percent by weight. Physical properties of Sn-doped ZnO powder were studied by XRD analysis which revealed that Sn doping had a significant effect on crystalline quality, grain size, intensity, dislocation density and strain. The calculated average grain size of pure ZnO was 21 nm. The best crystalline structure was found for 0 wt.%, 5 wt.% and 10 wt.% Sn doping as observed by FESEM and XRD. However, higher Sn-doping (> 10 wt.%) degraded the crystallinity and the grain size of 27.67 nm to 17.76 nm. The structures observed in FESEM images of the samples surfaces were irregular and non-homogeneous. EDX depicted no extra peak of impurity and confirmed good quality of the samples.

scholarly journals Effect of Annealing on the Characteristics of CoFeBY Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 250
Author(s):  
Wen-Jen Liu ◽  
Yung-Huang Chang ◽  
Yuan-Tsung Chen ◽  
Yi-Chen Chiang ◽  
Ding-Yang Tsai ◽  
...  
Keyword(s):  
Grain Size ◽  
Exchange Coupling ◽  
Low Frequency ◽  
Nanocrystalline Structure ◽  
Alternate Current ◽  
Xrd Analysis ◽  
Thickness Effect ◽  
Treatment Conditions ◽  
Average Grain Size ◽  
Thermal Stability Of

In this study, the addition of Y to CoFeB alloy can refine the grain size to study the magnetic, adhesion and optical properties of as-deposited and annealed CoFeB alloy. XRD analysis shows that CoFeB(110) has a BCC CoFeB (110) nanocrystalline structure with a thickness of 10–50 nm under four heat-treatment conditions, and a CoFeB(110) peak at 44° (2θ). The measurements of saturation magnetization (MS) and low frequency alternate-current magnetic susceptibility (χac) revealed a thickness effect owed to exchange coupling. The maximum MS of the 300 °C annealed CoFeBY film with a thickness of 50 nm was 925 emu/cm3 (9.25 × 105 A/m). The maximum χac value of the 300 °C annealed CoFeBY nanofilms with a thickness of 50 nm was 0.165 at 50 Hz. After annealing at 300 °C, CoFeBY nanofilms exhibited the highest surface energy of 31.07 mJ/mm2, where the thickness of the nanofilms was 40 nm. Compared with the as-deposited CoFeBY nanofilms, due to the smaller average grain size after annealing, the transmittance of the annealed nanofilms increased. Importantly, when a CoFeB seed or buffer layer was replaced by a CoFeBY nanofilm, the thermal stability of the CoFeBY nanofilms was improved, promoting themselves on the practical MTJ applications.

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